DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. PART NUMBER PACKAGE 2SK3299 TO-220AB 2SK3299-S TO-262 2SK3299-ZJ TO-263 FEATURES •Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A) •Avalanche capability ratings •Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±10 A ID(pulse) ±40 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 75 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C IAS 10 A EAS 66.7 mJ Drain Current (Pulse) Note1 Single Avalanche Current Single Avalanche Energy Note2 Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14060EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1999,2000 2SK3299 ELECTRICAL CHARACTERISTICS(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 5.0 A 3.2 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 5.0 A 0.68 Input Capacitance Ciss VDS = 10 V 1580 pF Output Capacitance Coss VGS = 0 V 280 pF Reverse Transfer Capacitance Crss f = 1 MHz 25 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 5.0 A 27 ns Rise Time tr VGS(on) = 10 V 17 ns Turn-off Delay Time td(off) RG = 10 Ω 66 ns Fall Time tf 24 ns Total Gate Charge QG VDD = 450 V 34 nC Gate to Source Charge QGS VGS = 10 V 8.2 nC Gate to Drain Charge QGD ID = 10 A 12.3 nC Diode Forward Voltage VF(S-D) IF = 10 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 1.9 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 12 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY S Ω 0.75 TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14060EJ1V0DS00 tr td(off) td(on) ton tf toff 2SK3299 TYPICAL CHARACTERISTICS (TA = 25 °C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 VGS = 10 V 8.0 V 6.0 V 20 15 10 ID - Drain Current - A ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25 10 Tch = 125 ˚C 75 ˚C 25 ˚C −25 ˚C 1 0.1 5 0.01 0 0 0 10 20 30 VDS - Drain to Source Voltage - V 40 5 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cutoff Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 5.0 4.0 3.0 2.0 1.0 VDS = 10 V ID = 1 mA 0 −50 0 50 100 150 100 VDS = 10 V Pulsed Tch = −25 ˚C 25 ˚C 75 ˚C 125 ˚C 10 1 0.1 0.1 1 Tch - Channel Temperature - ˚C ID = 10 A 5.0 A 5 10 15 RDS(on) - Drain to Source On-State Resistance - Ω 2.0 0 0 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3.0 Pulsed 1.0 10 VDS = 10 V Pulsed 15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE RDS (on) - Drain to Source On-State Resistance - Ω • DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 3.0 2.0 VGS = 10 V 20 V 1.0 0 0 1.0 10 ID - Drain Current - A 100 VGS - Gate to Source Voltage - V Data Sheet D14060EJ1V0DS00 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 3.0 ID = 10 A 5.0 A 1.0 0 −50 VGS = 10 V Pulsed 0 100 50 10 1 0V 0.1 0.01 0 150 Tch - Channel Temperature - ˚C 0.5 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Switching Time - ns 100 Ciss 1000 100 Coss 10 Crss VGS= 0 V f=1 MHz 1 0.1 1 10 100 td(off) tf 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 0.1 1000 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 50 A/µs VGS = 0 V 1 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800 16 VDS - Drain to Source Voltage - V 10 td(on) tr 10 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - µs Pulsed 1.5 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VGS = 10 V 14 600 VDD = 450 V 300 V 150 V 12 10 VGS 400 8 6 200 4 2 VDS ID = 10 A 0.01 0.1 1 10 100 0 0 20 30 QG - Gate Charge - nC ID - Drain Current - A 4 10 Data Sheet D14060EJ1V0DS00 0 40 VGS - Gate to Source Voltage - V 2.0 ISD - Diode Forward Current - A RDS (on) - Drain to Source On-state Resistance - Ω 2SK3299 2SK3299 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 70 60 50 40 30 20 10 0 160 0 20 Tch - Channel Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) ID - Drain Current - A PW d te mi 10 ) on S( Li 10 0µ s ID(DC) RD Po we r 1 =1 0µ s 1m s 3m s 10 30 ms 10 ms 0 m s Di ss ipa tio n Lim ite d TC = 25˚C Single Pulse 0.1 1 10 100 1 000 VDS - Drain to Source Voltage - V Rth(t) - Transient Thermal Resistance - ˚C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(CH-A) = 83.3 ˚C/W 10 Rth(CH-C) = 1.67 ˚C/W 1 0.1 0.01 10 µ 100 µ 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s Data Sheet D14060EJ1V0DS00 5 2SK3299 10 IAS = 10 A EAS 6.7 mJ 1.0 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25 ˚C 0.1 100 µ 10 µ 1m L - Inductive Load - H 6 =6 120 10m Energy Defrating Factor - % IAS - Single Avalanche Energy - mJ 100 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD VDD = 150 V RG = 25 Ω VGS = 20 V→0 V IAS ≤ 10 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14060EJ1V0DS00 2SK3299 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. 10.6 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 4 1 1 2 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 3 8.5±0.2 15.5 MAX. 5.9 MIN. 4 12.7 MIN. 3.0±0.3 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 5.7±0.4 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Drain (D) ) .5R (0 ) ( R 0.8 0.5±0.2 Body Diode Gate (G) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Source (S) Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D14060EJ1V0DS00 7 2SK3299 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8