DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE 2SK3322 TO-220AB (MP-25) characteristics, and designed for high voltage 2SK3322-S TO-262 applications such as switching power supply, AC 2SK3322-ZJ TO-263(MP-25ZJ) 2SK3322-ZK TO-263(MP-25ZK) The 2SK3322 is N-Channel DMOS FET device that features a low gate charge and excellent switching ★ adapter. FEATURES ★ • Low gate charge : QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.8 A) • Avalanche capability ratings • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±5.5 A ID(pulse) ±20 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 65 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note2 IAS 4.0 A Note2 EAS 10.7 mJ Drain Current (pulse) Note1 Single Avalanche Current Single Avalanche Energy Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information contained in this document is being issued in advance of the production cycle for the product. The parameters for the product may change before final production or NEC Electronics Corporation, at its own discretion, may withdraw the product prior to its production. Not all products and/or types are availabe in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14114EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark ★ shows major revised points. 1999, 2000 2SK3322 ★ ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 2.8 A 1.0 RDS(on) VGS = 10 V, ID = 2.8 A 1.7 Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note S Ω 2.2 Input Capacitance Ciss VDS = 10 V, 550 pF Output Capacitance Coss VGS = 0 V, 115 pF Reverse Transfer Capacitance Crss f = 1 MHz 13 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 2.8 A, 12 Ns tr VGS = 10 V, 10 ns td(off) RG = 10 Ω 35 ns 12 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 450 V, 15 nC Gate to Source Charge QGS VGS = 10 V, 4 nC QGD ID = 5.5 A 4.4 nC VF(S-D) IF = 5.5 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 5.5 A, VGS = 0 V, 1.6 µs Reverse Recovery Charge Qrr di/dt = 50 A/µs 5.3 µC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D14114EJ2V0DS td(on) tr ton td(off) tf toff 2SK3322 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V Pulsed 10 ID - Drain Current - A ID - Drain Current - A 10 VGS = 10 V 8.0 V 6.0 V 5 1 Tch = 125˚C 75˚C 25˚C −25˚C 0.1 0.01 0 10 0 20 30 40 0 50 5 VDS - Drain to Source Voltage - V VDS = 10 V ID = 1 mA 3 2 1 0 50 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 5 0 −50 150 10 Tch = −25˚C 25˚C 75˚C 125˚C 1 VDS = 10 V Pulsed 0.1 0.1 1 3 Pulsed ID = 4.0 A 2.8 A 1 0 5 10 VGS - Gate to Source Voltage - V 15 RDS(on) - Drain to Source On-State Resistance - Ω RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 10 ID - Drain Current - A Tch - Channel Temperature - ˚C 2 15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3 VGS = 10 V 20 V 2 1 0 0.1 Pulsed 1 10 100 ID - Drain Current - A Data Sheet D14114EJ2V0DS 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 4 ID = 4.0 A 2.8 A 2 1 VGS = 10 V Pulsed 0 −50 50 0 10 0 VGS = 10 V Pulsed 0.01 0 150 100 0V 0.1 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 Coss 10 Crss 10 trr - Reverse Recovery Time - ns td(off) tr 1 VDD = 150 V VGS = 10 V RG = 10 Ω 0.1 0.1 100 1 10 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/µS VGS = 0 V 1000 100 16 ID = 4.0 A 14 600 1 12 10 VGS 8 6 200 10 4 VDS 0 0.1 VDD = 450 V 300 V 150 V 400 0 4 2 8 12 QG - Gate Charge - nC ID - Drain Current - A 4 tf td(on) 10 ID - Drain Current - A 10000 10 0.01 td(on), tr, td(off), tf - Switching Time - ns Ciss 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHZ 1 1.5 SWITCHING CHARACTERISTICS 1000 1 0.1 1 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10000 0.5 Data Sheet D14114EJ2V0DS 0 16 VGS - Gate to Source Voltage - V 3 ISD - Diode Forward Current - A RDS (on) - Drain to Source On-State Resistance - Ω 2SK3322 2SK3322 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 60 50 40 30 20 10 0 0 160 20 40 Tch - Channel Temperature - ˚C 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA TC = 25˚C Single Pulse ID(pulse) P W 10 10 0 d ite im L n) (o ID(DC) DS R 0.1 1 = µs 10 µs 1m Po we r 1 10 10 s m s Di ss ipa tio n Lim ite d 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 100 Rth(ch-A) = 83.3˚C/W 10 Rth(ch-C) = 1.93˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14114EJ2V0DS 5 2SK3322 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 10 IAS = 4.0 A EAS =1 0.7 mJ 1.0 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25˚C 0.1 10µ 100 µ 1m Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 80 60 40 20 0 25 50 75 100 125 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - H 6 VDD = 150 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 4.0 A 100 Data Sheet D14114EJ2V0DS 150 2SK3322 ★ PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 1.3±0.2 10 TYP. 4 4 1 2 3 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4) TO-263 (MP-25ZK) 4.8 MAX. 10 TYP. 10.0±0.3 1.3±0.2 No plating 7.88 MIN. 4 3 5.7±0.4 2 1.4±0.2 0.7±0.2 2.54 TYP. 9.15±0.3 8.0 TYP. 8.5±0.2 1.0±0.5 4 1.35±0.3 3) TO-263 (MP-25ZJ) 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 4.45±0.2 1.3±0.2 0.025 to 0.25 P. R 0.5 2.54 TYP. TY .8R P. TY 0.5± 0.5±0.2 0.75±0.2 0 0.2 0 to 2.54 2.54±0.25 0.75±0.1 2.54 TYP. 12.7 MIN. 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 1.3±0.2 8.5±0.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 15.25±0.5 3.0±0.3 φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 8o 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 1.Gate 2.Drain 3.Source 2.5 2.8±0.2 0.25 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Gate Protection Diode exceeding the rated voltage may be applied to this device. Source Data Sheet D14114EJ2V0DS 7 2SK3322 • The information in this document is current as of August, 2003. The information is subject to change without notice. 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