DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3325 TO-220AB 2SK3325-S TO-262 2SK3325-ZJ TO-263 a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) (TO-220AB) • Gate voltage rating: ±30 V • Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Avalanche capability ratings • TO-220AB, TO-262, TO-263 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 500 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V ID(DC) ±10 A ID(pulse) ±40 A Total Power Dissipation (TC = 25°C) PT 85 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (DC) Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10.7 mJ (TO-262) (TO-263) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14264EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan © 1999, 2000 2SK3325 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 500 V, VGS = 0 V 100 µA Gate to Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 5.0 A 2.0 RDS(on) VGS = 10 V, ID = 5.0 A 0.68 VDS = 10 V, VGS = 0 V, f = 1 MHz 1200 pF Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 4.0 S Ω 0.85 Input Capacitance Ciss Output Capacitance Coss 190 pF Reverse Transfer Capacitance Crss 10 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V, 21 ns RG = 10 Ω, RL = 60 Ω 11 ns td(off) 40 ns tf 9.5 ns 22 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 6.5 nC Gate to Drain Charge QGD 7.5 nC IF = 10 A, VGS = 0 V 1.0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / µs 0.5 µs 2.6 µC Body Diode Forward Voltage VDD = 400 V, VGS = 10 V, ID = 10 A VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID VGS 0 ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D14264EJ1V0DS00 td(on) tr ton td(off) tf toff 2SK3325 TYPICAL CHARACTERISTICS(TA = 25 °C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 80 60 100 120 140 80 60 40 20 0 160 20 40 W 10 0 Po rD ip VGS = 20 V µs s m at io n Li 160 Pulsed 10 s iss 1 = µs 1m 10 we 140 20 ID (pulse) P ID - Drain Current - A ID - Drain Current - A 10 100 120 Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure3. FORWARD BIAS SAFE OPERATING AREA 100 ID (DC) 80 Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C d ite ) im 0 V )L 1 on = ( S S RD t VG (a 60 m ite 10 V 8.0 V 10 VGS = 6.0 V d Tc = 25 ˚C Single Pulse 0.1 1 10 100 1000 0 VDS - Drain to Source Voltage - V 4 8 12 16 VDS - Drain to Source Voltage - V Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 Pulsed ID - Drain Current - A 10 1 0.1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.01 0.001 0.0001 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D14264EJ1V0DS00 3 2SK3325 rth (t) - Transient Thermal Resistance - ˚C/W Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.0 ˚C/W 10 Rth(ch-C) = 1.47 ˚C/W 1 0.1 Tc = 25 ˚C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 IyfsI - Forward Transfer Admittance - S Figure7. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 0.1 0.01 0.01 VDS = 10 V Pulsed 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - Ω PW - Pulse Width - s Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0 ID = 10 A 5.0 A 2.0 A 1.0 0.0 Pulsed 0 Pulsed 2.0 1.0 1 10 25 100 4.0 VDS = 10 V ID = 1 mA 3.0 2.0 1.0 0.0 –50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 20 Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 0.1 15 VGS - Gate to Source Voltage - V ID - Drain Current - A 3.0 10 5 Data Sheet D14264EJ1V0DS00 200 Figure12. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0 100 ISD - Diode Forward Current - A 2.0 ID = 10 A ID = 5.0 A 1.0 VGS = 10 V 0.0 –50 0 50 100 Pulsed 10 VGS = 10 V 1 VGS = 0 V 0.1 0.01 0.0 150 0.5 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V Figure13. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Figure14. SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1.0 MHz Ciss 1000 Coss 100 10 Crss 1 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 tr tf 100 td(on) td(off) 10 VDD = 150 V VGS = 10 V RG = 10 Ω 1 0.1 0.1 10 1 1.5 1.0 100 1 10 ID - Drain Current - A 1000 100 VDS - Drain to Source Voltage - V Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS Figure15. REVERSE RECOVERY TIME vs. DRAIN CURRENT 800 1000 ID = 10 A di/dt = 50 A/µs VGS = 0 V VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 900 800 700 600 500 400 300 200 100 0.1 1 10 12 VDD = 400 V 250 V 100 V 600 500 VGS 10 400 8 300 6 200 4 VDS 100 0 0 14 700 100 5 10 2 15 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 2SK3325 0 25 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14264EJ1V0DS00 5 2SK3325 Figure18. SINGLE AVALANCHE ENERGY vs INDUCTIVE LOAD Figure17. SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE ID(peak) = IAS RG = 25 Ω VGS = 20 V → 0 V VDD = 150 V 14 12 EAS = 10.7 mJ 10 8 6 4 2 0 25 50 75 100 125 150 175 100 IAS - Single Avalanche Energy - A EAS - Single Avalanche Energy - mJ 16 10 IAS = 10 A EAS = 10 .7 m J 1 0.1 10 µ Starting Tch - Starting Channel Temperature - ˚C 6 RG = 25 Ω VDD = 150 V VGS = 20 V → 0 V Starting Tch = 25 ˚C Data Sheet D14264EJ1V0DS00 100 µ 1m L - Inductive Load - H 10 m 2SK3325 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. 10.6 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 4 1 1 2 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 3 8.5±0.2 15.5 MAX. 5.9 MIN. 4 12.7 MIN. 3.0±0.3 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. (10) 1.3±0.2 EQUIVALENT CIRCUIT 5.7±0.4 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Drain (0 ) .5R ) .8R (0 Body Diode Gate 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Source Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D14264EJ1V0DS00 7 2SK3325 • The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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