DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3357 TO-3P designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 38 A) • Low Ciss: Ciss = 9800 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V ID(DC) ±75 A ID(pulse) ±300 A PT 150 W Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT 3.0 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 75 A Single Avalanche Energy Note2 EAS 562 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 0.83 °C/W Channel to Ambient Rth(ch-A) 41.7 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14134EJ2V0DS00 (2nd edition) Date Published May 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999, 2000 2SK3357 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 38 A 4.6 5.8 mΩ RDS(on)2 VGS = 4.0 V, ID = 38 A 6.1 8.8 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 38 A 38 72 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 9800 pF Coss 1500 pF Reverse Transfer Capacitance Crss 630 pF Turn-on Delay Time td(on) ID = 38 A, VGS(on) = 10 V, VDD = 30 V, 105 ns RG = 10 Ω 1350 ns td(off) 500 ns tf 480 ns 170 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 28 nC Gate to Drain Charge QGD 46 nC Body Diode Forward Voltage ID = 75 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 75 A, VGS = 0 V 0.96 V Reverse Recovery Time trr IF = 75 A, VGS = 0 V, 64 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 130 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90 % ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10 % 0 10 % Wave Form τ VDD PG. 90 % BVDSS VDS ID 90 % VDD ID IAS VGS(on) 10 % Data Sheet D14134EJ2V0DS00 tr td(off) td(on) ton tf toff 2SK3357 TYPICAL CHARACTERISTICS (TA = 25 °C ) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 175 100 80 60 40 20 0 0 20 40 60 80 100 120 140 150 125 100 75 50 25 0 0 160 20 Tch - Channel Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 1000 PW ID - Drain Current - A ID(pulse) d ite V) Lim 10 n) = o S S( RD t VG (a 100 10 0µ s ID(DC) 1m s Po we r 10 =1 0µ s 10 m s Di ss ipa tio n Lim ite d TC = 25˚C Single Pulse 1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ★ 100 Rth(ch-A) = 41.7 ˚C/W 10 1 Rth(ch-C) = 0.83 ˚C/W 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14134EJ2V0DS00 3 2SK3357 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed ID - Drain Current - A ID - Drain Current - A 500 100 TA = −50˚C 25˚C 75˚C 150˚C 10 1 400 VGS =10 V 300 4.0 V 200 100 1 2 3 VDS = 10 V 5 6 4 RDS(on) - Drain to Source On-state Resistance - mΩ 4.0 3.0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 TA = 150˚C 75˚C 25˚C −50˚C 1 0.1 0.01 0.01 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 15 10 VGS = 4.0 V 5 10 V 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VDS - Drain to Source Voltage - V ID - Drain Current - A 4 2.0 1.0 VGS - Gate to Source Voltage - V 100 VDS = 10 V Pulsed 0 Pulsed 0 VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 0.1 10 Pulsed ID = 38 A 5 0 5 0 10 15 20 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14134EJ2V0DS00 2SK3357 1000 Pulsed 10 VGS = 4.0 V 10 V 8 6 4 2 ID = 38 A 0 −50 50 0 100 Pulsed VGS = 10 V 100 VGS = 0 V 10 1 0.1 0 150 Tch - Channel Temperature - ˚C Ciss 1000 Coss Crss 100 0.1 1 10 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 10000 VGS = 0 V f = 1 MHz 10000 100 tr 1000 td(off) tf 100 td(on) 10 0.1 REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 10 100 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 1.0 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 1.0 0.5 10 VGS 8 80 VDD = 48 V 30 V 12 V 60 6 4 40 VDS 20 0 20 40 60 2 80 ID = 75 A 100 120 140 160 VGS - Gate to Source Voltage - V 12 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14134EJ2V0DS00 5 2SK3357 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 160 IAS = 75 A 100 EAS =5 62 m J 10 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V 1 10 µ 100 µ 120 100 80 60 40 20 1m L - Inductive Load - H 6 VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 75 A 140 Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 1000 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14134EJ2V0DS00 2SK3357 PACKAGE DRAWING (Unit: mm) TO-3P (MP-88) 4.7 MAX. 3.2±0.2 Drain 2 3 5.45 7.0 Gate Protection Diode 1.0±0.2 0.6±0.1 5.45 Body Diode Gate 19 MIN. 3.0±0.2 1 4.5±0.2 20.0±0.2 6.0 4 2.2±0.2 EQUIVALENT CIRCUIT 1.5 1.0 15.7 MAX. Source 2.8±0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14134EJ2V0DS00 7 2SK3357 • The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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