DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE 2SK3454 Isolated TO-220 and designed for high voltage applications such as DC/DC converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.63 Ω MAX. (VGS = 10 V, ID = 4.0 A) •Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) •Built-in gate protection diode •Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±7.0 A ID(pulse) ±21 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 30 W Channel Temperature Tch 150 °C Drain Current(pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 7.0 A Single Avalanche Energy Note2 EAS 49 mJ Storage Temperature Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω , VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14756EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP (K) Printed in Japan The mark ★ shows major revised points. © 2000 2SK3454 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Drain Leakage Current IDSS VDS = 250 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 1.0 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 4.0 A 0.5 Input Capacitance Ciss VDS = 10 V 400 pF Output Capacitance Coss VGS = 0 V 110 pF Reverse Transfer Capacitance Crss f = 1 MHz 55 pF Turn-on Delay Time Td(on) VDD = 125 V, ID = 4.0 A 11 ns Rise Time Tr VGS(on) = 10 V 18 ns Turn-off Delay Time Td(off) RG = 10 Ω 32 ns Fall Time Tf 15 ns Total Gate Charge QG VDD = 200 V 18 nC Gate to Source Charge QGS VGS = 10 V 3.5 nC Gate to Drain Charge QGD ID = 7.0 A 10 nC Diode Forward Voltage VF(S-D) IF = 7.0 A, VGS = 0 V 1.0 V Reverse Recovery Time Trr IF = 7.0 A, VGS = 0 V 250 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 1.0 µC S Ω 0.63 TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D14756EJ2V0DS tr td(off) td(on) ton tf toff 2SK3454 TYPICAL CHARACTERISTICS FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 30 Pulsed VDS = 10 V ID - Drain Current - A ID - Drain Current - A 10 20 10 1 Tch = −25˚C 25˚C 75˚C 125˚C 150˚C 0.1 0.01 0.001 0 VGS =10 V Pulsed 10 0 20 30 40 50 60 0.0001 0 4 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 4 3 2 0 50 100 150 10 1 Tch = 150˚C 125˚C 75˚C 25˚C −25˚C 0.1 0.01 0.01 0.1 3 Pulsed ID = 7.0 A 4.0 A 1.4 A 1 0 5 10 15 20 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 VDS = 10 V Pulsed 10 100 1 ID - Drain Current - A Tch - Channel Temperature - ˚C 2 20 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 1 −50 16 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5 12 8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 Pulsed VGS = 10 V 1 0 0.1 1 10 100 ID - Drain Current - A VGS - Gate to Source Voltage - V Data Sheet D14756EJ2V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 VGS = 10 V Pulsed 1.5 ID = 7.0 A 1 4.0 A 0.5 0 50 100 10 VGS = 10 V 1 0V 0.1 0.01 0 150 0.4 0.8 1.2 1.6 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 V f = 1 MHz 1000 Ciss 100 Coss 10 0.1 Pulsed 1 10 100 Crss 1000 tr 100 td(off) tf td(on) 10 VDD = 125 V VGS = 10 V RG = 10 Ω 1 0.1 10 1 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 100 10 1 0.1 di/dt = 50 A/µs VGS = 0 V 1 10 100 12 250 200 VGS 8 150 6 100 4 50 2 VDS ID = 7.0 A 0 0 ISD - Diode Forward Current - A 4 10 VDD = 200 V 125 V 50 V 5 10 15 QG - Gate Charge - nC Data Sheet D14756EJ2V0DS 0 20 VGS - Gate to Source Voltage - V 0 −50 10000 Ciss, Coss, Crss - Capacitance - pF ISD - Diode Forward Current - A 2 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - Ω 2SK3454 2SK3454 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 40 100 80 60 40 20 0 0 20 40 60 80 20 10 0 0 120 140 160 100 30 ★ 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C Tch - Channel Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 100 ) (on DS 10 ID(pulse) ited Lim 0 V) 1 = S R VG (@ 10 0 ID(DC) =1 0 µs µs 1 Po we r 1 0.1 PW m s 3 10 ms 10 ms Di 0 ss ipa D ms tio C n Lim ite d TC = 25˚C Single Pulse 1 10 100 1000 VDS - Drain to Source Voltage - V ★ TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - ˚C/W Rth(ch-A) = 62.5˚C/W 10 Rth(ch-C) = 4.17˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14756EJ2V0DS 5 2SK3454 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 10 120 IAS = 7.0 A EAS 9m J 1 VDD = 125 V VGS = 20 V → 0 V RG = 25 Ω 0.1 Starting Tch = 25°C 0.01 0.1 1 L - Inductive Load - mH 6 =4 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 VDD = 125 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 7.0 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14756EJ2V0DS 2SK3454 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 10.0±0.3 φ 3.2±0.2 4.5±0.2 2.7±0.2 0.7±0.1 2.54 TYP. 12.0±0.2 Drain 1.3±0.2 1.5±0.2 2.54 TYP. Body Diode Gate 13.5 MIN. 4±0.2 3±0.1 15.0±0.3 EQUIVALENT CIRCUIT Gate Protection Diode Source 2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14756EJ2V0DS 7 2SK3454 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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