DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3482 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3482 TO-251 (MP-3) 2SK3482-Z TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3600 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±36 A ID(pulse) ±100 A Total Power Dissipation (TC = 25°C) PT 50 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Drain Current (Pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 30 A Single Avalanche Energy Note2 EAS 90 mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15064EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2001 2SK3482 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 18 A 12 23 RDS(on)1 VGS = 10 V, ID = 18 A 27 33 mΩ RDS(on)2 VGS = 4.5 V, ID = 18 A 29 39 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 3600 pF Output Capacitance Coss VGS = 0 V 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 190 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 18 A 15 ns VGS = 10 V 10 ns RG = 0 Ω 68 ns 6 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 72 nC Gate to Source Charge QGS VGS = 10 V 10 nC QGD ID = 36 A 19 nC VF(S-D) IF = 36 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 36 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 180 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D15064EJ2V0DS td(on) tr ton td(off) tf toff 2SK3482 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 60 100 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF SAFE OPERATING AREA 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 10 d ite V) im 10 L ) = on S( GS RDat V ( 10 0 ID(DC) = 36 A DC 10 1 PW µs = 10 µs m s m s Po Lim we ite r Di d s 1 sip at ion TC = 25˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V 1000 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) = 100 A 100 Rth(ch-A) = 125˚C/W 100 Channel to Ambient 10 Rth(ch-C) = 2.5˚C/W Channel to Case 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D15064EJ2V0DS 10 100 1000 3 2SK3482 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 90 Pulsed 80 VGS = 10 V 10 ID - Drain Current - A ID - Drain Current - A 70 60 4.5 V 50 40 30 20 TA = 150°C 75°C -25°C -40°C 1 0.1 VDS = 10 V Pulsed 10 0.01 0 0 1 2 3 4 0 5 1 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 | yfs | - Forward Transfer Admittance - S VGS(off) – Gate Cut-off Voltage - V 4 5 100 V SD = 10 V ID = 1mA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 10 T A= 15 0 °C 7 5°C 2 5 °C -4 0 ° C 1 0 .1 V DS= 10V P u ls e d 0 .0 1 0 .0 1 0 .1 Tch - Channel Temperature - °C 60 50 40 V G S = 4 .5 V 10 V 10 0 0 .1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ P u ls e d 20 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 70 30 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 ID - Drain Current - A 4 2 VGS - Gate to Source Voltage - V 50 Pulsed 45 40 ID = 36 A 18 A 35 30 25 7.2 A 20 15 10 5 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D15064EJ2V0DS 18 20 2SK3482 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 80 10000 Pulsed C iss 60 50 V GS = 4.5 V 40 10 V 30 20 10 C oss 1000 C rss 100 V GS = 0 V f = 1 MHz 0 -50 -25 0 25 50 75 10 0.01 100 125 150 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 100 t d(off) td(on) 10 tr 10 ID = 36 A 90 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 V DD = 80 V 50 V 20 V 80 8 V GS 70 60 6 50 40 4 30 20 2 VDS 10 1 0 0.1 1 10 100 0 0 10 20 30 40 50 60 70 80 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 di/dt = 100 A/ µ s VGS = 0 V trr - Reverse Recovery Time - ns V GS = 10 V ISD - Diode Forward Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS V DD = 50 V V G S = 10 V RG = 0 Ω 100 1 VDS - Drain to Source Voltage - V 1000 tf 0.1 10 0V 1 0.1 100 10 Pulsed 0.01 0.0 1 0.5 1.0 1.5 VSD - Source to Drain Voltage - V 0.1 1 10 100 IF - Drain Current - A Data Sheet D15064EJ2V0DS 5 VGS - Gate to Drain Voltage - V 70 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3482 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 V D D = 50 V V G S = 20 → 0 V R G = 25 Ω 100 I AS = 30 A E AS = 90 m J 10 1 0.001 80 60 40 20 0 25 0.01 0.1 1 50 75 100 125 150 10 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 V D D = 50 V V G S = 20 → 0 V R G = 25 Ω I A S ≤ 30 A 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 Data Sheet D15064EJ2V0DS 2SK3482 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15064EJ2V0DS 7 2SK3482 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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