DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3639 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching PART NUMBER PACKAGE 2SK3639-ZK TO-252 (MP-3ZK) characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous (TO-252) rectifier. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±64 A ID(pulse) ±256 A Total Power Dissipation (TC = 25°C) PT1 40 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15967EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3639 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 32 A 19 RDS(on)1 VGS = 10 V, ID = 32 A 4.4 5.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 32 A 5.8 8.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time 2400 pF VGS = 0 V 970 pF 350 pF VDD = 10 V, ID = 32 A 13 ns VGS = 10 V 14 ns 71 ns 22 ns RG = 10 Ω td(off) S VDS = 10 V f = 1 MHz tr 39 tf Total Gate Charge QG VDD = 16 V 45 nC Gate to Source Charge QGS VGS = 10 V 7.6 nC 11 nC Gate to Drain Charge Body Diode Forward Voltage ID = 64 A QGD Note VF(S-D) IF = 64 A, VGS = 0 V 0.96 V Reverse Recovery Time trr IF = 64 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 35 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet D15967EJ3V0DS 2SK3639 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 10 µs 100 100 µs I D(D C) 1 ms 10 R DS(on) Lim ited (at V G S = 10 V) 0.1 10 m s DC Power Dissipation Lim ited 1 T c = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A I D(pulse) Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 3.13°C/W 1 0.1 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15967EJ3V0DS 3 2SK3639 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 1000 ID - Drain Current - A ID - Drain Current - A 250 V GS = 10 V 200 4.5 V 150 100 100 T ch = −55°C 25°C 75°C 150°C 10 1 0.1 50 V DS = 10 V Pulsed Pulsed 0.01 0 0 0.5 1 1.5 2 2.5 3 0 VDS - Drain to Source Voltage - V 2 1 .5 ` 1 0 .5 0 0 25 50 75 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 m A -2 5 10 1 V DS = 10 V Pulsed 0.1 0.1 1 15 10 V GS = 4.5 V 10 V 0 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 10 ID - Drain Current - A 4 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 5 T ch = −55°C 25°C 75°C 150°C 100 125 150 5 4 100 Tch - Channel Temperature - °C 20 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 -5 0 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2 .5 1 Data Sheet D15967EJ3V0DS ID = 32 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 0 0 00 12.5 10 V GS = 4.5 V 10 V 5 2.5 I D = 32 A Pulsed 0 - 50 - 25 0 25 50 75 C is s 1 0 00 C rs s 1 00 VGS = 0 V f = 1 MHz 10 0 .0 1 100 125 150 SWITCHING CHARACTERISTICS tf tr t d(on) 1 100 10 V DD = 16 V 10 V 16 8 12 6 VGS 8 4 4 2 I D = 64 A V DS 0 0.1 1 10 100 0 0 10 ID - Drain Current - A 20 30 40 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 10 20 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns t d(off) 10 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS V D D = 10 V V G S = 10 V R G = 10 Ω 100 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C 1000 C os s VGS - Gate to Source Voltage - V 7.5 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3639 V GS = 10 V 100 10 0V 1 0.1 100 10 di/dt = 100 A/µs VGS = 0 V Pulsed 1 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D15967EJ3V0DS 5 2SK3639 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 3 1.14 MAX. 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D15967EJ3V0DS 2SK3639 • The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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