DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3713-SK TO-262 designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RDS(on) = 0.83 Ω MAX. (VGS = 10 V, ID = 5 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±10 A ID(pulse) ±35 A Total Power Dissipation (TC = 25°C) PT1 100 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 6 mJ Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, L = 100 µH, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16588EJ1V0DS00 (1st edition) Date Published September 2003 NS CP(K) Printed in Japan 2003 2SK3713 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 3.8 4.8 5.8 V | yfs | VDS = 10 V, ID = 5 A 2.5 4.6 RDS(on) VGS = 10 V, ID = 5 A 0.68 Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note S Ω 0.83 Input Capacitance Ciss VDS = 10 V 1460 pF Output Capacitance Coss VGS = 0 V 250 pF Reverse Transfer Capacitance Crss f = 1 MHz 6.5 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 5 A 26 ns tr VGS = 10 V 8.5 ns td(off) RG = 10 Ω 30 ns 5.2 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 450 V 25 nC Gate to Source Charge QGS VGS = 10 V 12 nC QGD ID = 10 A 9 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 10 A, VGS = 0 V 0.9 1.5 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 450 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 4.0 µC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D16588EJ1V0DS td(on) tr ton td(off) tf toff 2SK3713 TYPICAL CHARACTERISTICS (TA = 25°C) 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 10 ID(pulse) RDS(on) Limited (at VGS = 10 V) ID(DC) PW = 100 µ s 1 ms 10 ms Power Dissipation Limited 1 0.1 Single pulse TC = 25°C 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 1000 Rth(ch-A) = 83.3°C/W 100 10 1 Rth(ch-C) = 1.25°C/W 0.1 0.01 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s Data Sheet D16588EJ1V0DS 10 100 1000 3 2SK3713 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 100 VGS = 10 V Pulsed 30 VGS = 20 V 25 10 V 20 15 10 5 VDS = 10 V Pulsed 10 ID - Drain Current - A 35 ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS TA = 150°C 125°C 1 0.1 75°C 25°C −25°C 0.01 0.001 0 0 10 20 30 0.0001 40 0 VDS - Drain to Source Voltage - V 5 10 15 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 5.5 5 4.5 4 3.5 3 VDS = 10 V ID = 1 mA 2.5 −25 0 25 50 75 100 125 150 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 6 VDS = 10 V Pulsed 10 1 125°C 150°C 0.1 0.01 0.01 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 1.5 VGS = 10 V 1 20 V 0.5 0.1 1 10 10 100 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.8 Pulsed ID = 10 A 5A 1.2 2A 0.6 ID - Drain Current - A 4 1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω Tch - Channel Temperature - °C 2 TA = −25°C 25°C 75°C 0 3 7 11 VGS - Gate to Source Voltage - V Data Sheet D16588EJ1V0DS 15 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1.8 VGS = 10 V Pulsed 1.6 Ciss, Coss, Crss - Capacitance - pF 1.4 ID = 5.0 A 1.2 1 0.8 0.6 0.4 0.2 1000 Coss 100 10 Crss VGS = 0 V f = 1 MHz 1 0 -25 0 25 50 75 100 125 0.1 150 VDD = 150 V VGS = 10 V RG = 10 Ω tf 100 td(off) td(on) 10 tr 1000 500 ID = 10 A VDD = 450 V 300 V 150 V 400 1 10 300 VGS VDS 100 3 0 0 4 8 12 16 20 24 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns Pulsed 10 VGS = 10 V 1 0V 0.1 9 6 200 100 15 12 0 0.1 100 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V 1000 10 VDS - Drain to Source Voltage - V 1 IF - Diode Forward Current - A 1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω 2SK3713 0.01 VGS = 0 V di/dt = 100 A/µ s 100 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16588EJ1V0DS 5 2SK3713 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 10 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 10 A EAS = 6 mJ 1 VDD = 100 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 0.01 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 VDD = 100 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C IAS ≤ 10 A Data Sheet D16588EJ1V0DS 2SK3713 PACKAGE DRAWING (Unit: mm) 1.35±0.3 TO-262 (MP-25 SK) 10.0±0.3 4.45±0.2 1.3±0.2 3.0±0.2 9.15±0.2 4 13.7 TYP. 1.3±0.2 0.8±0.15 0.5±0.2 2.54 2.54 2 3 2.5±0.2 1 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D16588EJ1V0DS 7 2SK3713 • The information in this document is current as of September, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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