DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 ± 0.1 1.25 ± 0.1 it can be driven by a voltage as low as 2.5 V and it is not 0.9 ± 0.1 • Gate can be driven by 2.5 V • Because of its high input impedance, there’s no need to 0.3 +0.1 –0 Marking +0.1 0 to 0.1 consider drive current 3 1 +0.1 FEATURES 2 0.15–0.05 stereos and video cameras. 0.3–0 0.65 0.65 actuator for low-current portable systems such as headphone 0.3 2.0 ± 0.2 necessary to consider a drive current, this FET is ideal as an ORDERING INFORMATION PART NUMBER PACKAGE 2SK3749 SC-70 (SSP) 1 : Source 2 : Gate 3 : Drain Marking: G27 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 50 V Gate to Source Voltage (VDS = 0 V) VGSS ±7.0 V ID(DC) ±100 mA ID(pulse) ±200 mA Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation PT 150 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17136EJ1V0DS00 (1st edition) Date Published April 2004 NS CP(K) Printed in Japan 2004 2SK3749 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V ±5.0 µA VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.9 1.5 V | yfs | VDS = 3.0 V, ID = 10 mA 20 RDS(on)1 VGS = 2.5 V, ID = 10 mA 20 40 Ω RDS(on)2 VGS = 4.0 V, ID = 10 mA 15 20 Ω Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 1.2 mS Input Capacitance Ciss VDS = 3.0 V 6.0 pF Output Capacitance Coss VGS = 0 V 8.0 pF Reverse Transfer Capacitance Crss f = 1 MHz 1.2 pF Turn-on Delay Time td(on) VDD = 3.0 V, ID = 20 mA 9.0 ns tr VGS = 3.0 V 50 ns td(off) RG = 10 Ω 20 ns 40 ns Rise Time Turn-off Delay Time Fall Time tf Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form τ τ = 1 µs Duty Cycle ≤ 1% 2 VGS 10% td(on) tr ton td(off) tf toff Data Sheet D17136EJ1V0DS 2SK3749 TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPRATURE 100 150 80 ID - Drain Current - mA PT- Total Power Dissipation - mW 180 120 90 60 3.5 V 60 2.5 V 40 20 30 0 0 30 90 120 150 60 TA - Ambient Temperature - ˚C 0 180 VGS = 2.0 V 0 100 100 |yfs| - Forward Transfer Admittance - mS VDS = 3.0 V ID - Drain Current - mA 10 TA = 75˚C 25˚C 1 2 3 4 1 VDS - Drain to Source Voltage - V 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS –25˚C 0.1 0.01 0.001 VDS = 3.0 V TA = –25˚C 50 25˚C 125˚C 20 10 1 1 2 3 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = 2.5 V 50 TA = 75˚C 25˚C 20 –25˚C 10 5 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 RDS(on) - Drain to Source On-State Resistance - Ω 0 RDS(on) - Drain to Source On-State Resistance - Ω 3.0 V 4.0 V 2 5 10 20 ID - Drain Current - A 50 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = 4.0 V 50 TA = 75˚C 25˚C 20 –25˚C 10 Data Sheet D17136EJ1V0DS 5 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 3 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 30 Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω 2SK3749 ID = 1 mA 10 mA 50 mA 20 10 Ciss 5 Coss 2 1 0.5 Crss 0.2 VGS = 0 V f = 1 MHz 0.1 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 1 7 100 tr IF - Diode Forward Current - mA td(on), tr, td(off), tf - Switching Time - ns 100 4 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS 50 tf 20 td(off) 10 td(on) 5 VDD = 3.0 V VGS = 3.0 V RG = 10 Ω 2 1 10 2 5 10 20 50 VDS - Drain to Source Voltage - V 20 50 100 200 ID - Drain Current - mA 500 10 1 1000 0 0.2 0.4 0.6 0.8 VF(S-D) - Source to Drain Voltage - V Data Sheet D17136EJ1V0DS 1.0 2SK3749 • The information in this document is current as of April, 2004. 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