DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3943 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3943-ZP TO-263 (MP-25ZP) FEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 5800 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±82 A ID(pulse) ±328 A Total Power Dissipation (TC = 25°C) PT1 104 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Single Avalanche Energy Note2 EAS 185 mJ Repetitive Avalanche Current Note3 IAR 43 A Repetitive Avalanche Energy Note3 EAR 185 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17188EJ1V0DS00 (1st edition) Date Published February 2005 NS CP(K) Printed in Japan 2005 2SK3943 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V | yfs | VDS = 10 V, ID = 41 A 21 43 RDS(on)1 VGS = 10 V, ID = 41 A 2.9 3.5 mΩ RDS(on)2 VGS = 5.5 V, ID = 41 A 3.8 5.6 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 5800 pF Output Capacitance Coss VGS = 0 V 860 pF Reverse Transfer Capacitance Crss f = 1 MHz 510 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 41 A 29 ns VGS = 10 V 10 ns RG = 0 Ω 69 ns 12 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 32 V 93 nC Gate to Source Charge QGS VGS = 10 V 28 nC QGD ID = 82 A 28 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D)1 IF = 60 A, VGS = 0 V 0.88 1.2 V VF(S-D)2 IF = 82 A, VGS = 0 V 0.92 1.5 V Reverse Recovery Time trr IF = 82 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 49 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D17188EJ1V0DS td(on) ton tf toff 2SK3943 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 125 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 75 50 25 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 328 A 100 100 µs ID(DC) = 82 A 1 ms 10 Power Dispation Limited 10 ms TC = 25°C Single pulse 1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A RDS(on)Limited (at VGS = 10 V) Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 1.2°C/W 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17188EJ1V0DS 3 2SK3943 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 400 1000 Pulsed 300 ID - Drain Current - A ID - Drain Current - A 350 VGS = 10 V 250 5.5 V 200 150 100 100 Tch = −55°C 25°C 75°C 125°C 150°C 10 1 0.1 VDS = 10 V Pulsed 50 0 0.01 0 1 2 3 4 5 0 VDS - Drain to Source Voltage - V 3 2.5 2 1.5 1 0.5 0 25 75 125 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA -25 8 7 6 VGS = 5.5 V 4 3 10 V 1 0 10 100 V DS = 10 V Pulsed 0.1 1 10 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 8 6 4 ID = 41 A 2 0 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 7 1 0.1 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 1 6 ID - Drain Current - A 10 2 5 T ch = −55°C 25°C 75°C 125°C 150°C 10 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 4 100 Tch - Channel Temperature - °C 9 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 -75 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 1 Data Sheet D17188EJ1V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 100000 ID = 41 A Pulsed 8 7 6 V GS = 5.5 V 5 4 3 10 V 2 10000 Ciss VGS = 0 V f = 1 MHz 1 0 -75 -25 25 75 125 100 0.01 175 Tch - Channel Temperature - °C VDD = 20 V VGS = 10 V RG = 0 Ω td(off) 100 td(on) tf 10 0.1 1 10 tr 35 1 14 ID = 82 A 30 12 VDD = 32 V 20 V 8V 25 10 20 8 15 6 VGS 10 4 VDS 5 2 0 0.1 1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 10 100 0 ID - Drain Current - A 20 40 60 80 0 100 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 100 VGS = 10 V ID - Drain Current - A IF - Diode Forward Current - A Coss 1000 VGS - Gate to Source Voltage - V 9 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3943 0V 10 1 0.1 Tch = −55°C 25°C 75°C 125°C 150°C 100 10 1 0.1 VGS = 0 V Pulsed Pulsed 0.01 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D17188EJ1V0DS 5 2SK3943 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 IAS - Single Avalanche Current - A trr - Reverse Recovery Time - ns 1000 100 10 di/dt = 100 A/µs VGS = 0 V 100 1 0.1 1 10 100 SINGLE AVALANCHE ENERGY DERATING FACTOR Energy Derating Factor - % 100 VDD = 20 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 43 A 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C 6 EAS = 185mJ 10 V DD = 20 V RG = 25 Ω V GS = 20 → 0 V Starting Tch = 25°C 1 0.001 0.01 0.1 1 L - Inductive Load - mH IF - Diode Forward Current - A 80 IAS = 43 A Data Sheet D17188EJ1V0DS 10 2SK3943 PACKAGE DRAWING (Unit: mm) 0.5 4.45±0.2 1.3±0.2 0.025 to 0.25 0.6± 0.75±0.2 0.2 0 to 2.54 2.54±0.25 9.15±0.3 8.0 TYP. 7.88 MIN. 4 15.25±0.5 10.0±0.3 No plating 1.35±0.3 TO-263 (MP-25ZP) 8o 0.25 1 2 3 1.Gate 2.Drain 2.5 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D17188EJ1V0DS 7 2SK3943 • The information in this document is current as of February, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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