NEC 3SK299

DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR
4 PIN SMALL MINI MOLD
FEATURES
PACKAGE DIMENSIONS
• Suitable for use as RF amplifier in UHF TV tuner.
in millimeters
–4.5
V
–4.5
V
Drain Current
ID
40
mA
Total Power Dissipation
PT
120
mW
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
–55 to +125
°C
3
VG1S
VG2S
4
Gate1 to Source Voltage
Gate2 to Source Voltage
(1.3)
0.3 +0.1
–0.05
V
0 to 0.1
13
0.3
0.4 +0.1
–0.05
VDSX
0.9±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
2
2.0±0.2
(1.25)
0.60 0.65
• 4 PIN SMALL MINI MOLD PACKAGE
1
• Low NF : 1.1 dB TYP.
0.3 +0.1
–0.05
2.1±0.2
1.25±0.1
0.3 +0.1
–0.05
• High GPS : 20 dB TYP.
0.15 +0.1
–0.05
• Low Crss : 0.02 pF TYP.
1. Source
2. Drain
3. Gate 2
4. Gate 1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
10
µA
VDS = 13 V, VG1S = –4 V, VG2S = 0
40
mA
VDS = 5 V, VG2S = 0, VG1S = 0
Drain Current
IDSX
Drain Current
IDSS
Gate1 to Source Cutoff Voltage
VG1S(off)
–3.5
V
VDS = 5 V, VG2S = 0 , ID = 100 µA
Gate2 to Source Cutoff Voltage
VG2S(off)
–3.5
V
VDS = 5 V, VG1S = 0, ID = 100 µA
Gate1 Reverse Current
IG1SS
10
µA
VDS = 0, VG1S = –4 V, VG2S = 0
Gate2 Reverse Current
IG2SS
10
µA
VDS = 0, VG2S = –4 V, VG1S = 0
Forward Transfer Admittance
|yfs|
18
25
35
ms
VDS = 5 V, VG2S = 1 V, ID = 10 mA
f = 1.0 kHz
Input Capacitance
Ciss
0.5
1.0
1.5
pF
VDS = 5 V, VG2S = 1 V, ID = 10 mA
pF
f = 1 MHz
dB
VDS = 5 V, VG2S = 1 V, ID = 10 mA
dB
f = 900 MHz
Reverse Transfer Capacitance
Crss
Power Gain
GPS
Noise Figure
NF
5
20
0.02
16.0
20.0
1.1
IDSS Classification
2.5
Unit: mA
Class
U71
U72
U73
U74
Marking
U71
U72
U73
U74
5 to 15
10 to 25
20 to 35
30 to 40
IDSS
0.03
Document No. P11034EJ1V0DS00 (1st edition)
Date Published December 1995 P
Printed in Japan
©
1995
3SK299
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
VDS = 5 V
400
ID – Drain Current – mA
PT – Total Power Dissipation – mW
30
300
200
25
50
75
100
0V
0
125
–1.0
0
+1.0
TA – Ambient Temperature – ˚C
VG1S – Gate 1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
VDS = 5 V
f = 1 kHz
yfs – Forward Transfer Admittance – mS
yfs – Forward Transfer Admittance – mS
10
–0.5 V
30
VG2S = 1.0 V
0.5 V
20
0V
10
–0.5 V
0
–1.0
0
+1.0
VG2S = 1.0 V
20
VG2S = 0.5 V
10
0
20
10
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
30
5
GPS – Power Gain – dB
NF – Noise Figure – dB
VG2S = 1 V at ID = 10 mA
VG2S = 1 V at ID = 5 mA
VDS = 5 V
VG2S = 1 V
at ID = 10 mA
15
f = 900 MHz
GPS
0
–15
–30
0
–1.0
30
ID – Drain Current – mA
VDS = 5 V
f = 1 MHz
1.0
VDS = 5 V
f = 1 kHz
VG1S – Gate 1 to Source Voltage – V
2.0
Ciss – Input Capacitance – pF
0.5 V
100
0
0
VG2S – Gate 2 to Source Voltage – V
2
VG2S = 1.0 V
20
+1.0
0
–45
–3.0
NF
–2.0
–1.0
0
+1.0
VG2S – Gate 2 to Source Voltage – V
+2.0
3SK299
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
10
20
25
GPS
20
VDS = 5 V
VG2S = 1 V
f = 900 MHz
GPS
VG2S = 1 V
VG2S = 0.5 V
VG2S = 2 V
ID = 10 mA
f = 900 MHz
10
5
GPS – Power Gain – dB
NF – Noise Figure – dB
5
GPS – Power Gain – dB
NF – Noise Figure – dB
20
15
10
5
NF
NF
0
0
0
5
5
0
10
ID – Drain Current – mA
10
VDS – Drain to Source Voltage – V
S-PARAMETER (VDS = 5 V, VG2S = 1 V, ID = 10 mA)
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100.0000
0.999
–3.3
2.359
177.2
0.006
–122.3
0.969
200.0000
1.000
–7.2
2.389
169.3
0.004
123.0
0.981
–2.9
300.0000
0.998
–9.3
2.313
164.4
0.000
–145.0
0.979
–3.3
400.0000
0.974
–13.4
2.233
160.0
0.004
79.2
0.967
5.6
500.0000
1.005
–15.7
2.420
158.4
0.007
29.7
0.999
–5.8
600.0000
0.942
–19.1
2.300
150.0
0.003
65.0
0.958
–7.7
700.0000
0.968
–22.2
2.332
145.5
0.004
45.5
0.997
–8.5
800.0000
0.920
–25.2
2.229
141.5
0.008
80.1
0 957
–9.4
900.0000
0.952
28.9
2.447
136.8
0.004
8.3
0.999
–12.5
1000.0000
0.898
–29.4
2.303
131.1
0.001
50.9
0.968
–11.1
1100.0000
0.915
–35.1
2.348
125.8
0.004
71.4
0.984
–14.8
1200.0000
0.879
–35.2
2.367
123.5
0.000
91.1
0.989
–13.0
–1.3
3
3SK299
900 MHz GPS AND NF TEST CIRCUIT
VG2S (1 V)
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50 Ω
to 10 pF
to 10 pF
OUTPUT
50 Ω
L2
L1
47 kΩ
RFC
1 000 pF
1 000 pF
L1, L2 35 × 5 × 0.2 mm
VG1S
VDD (5 V)
VDS = 5 V, VG2S = 1 V, ID = 10 mA
4
3SK299
[MEMO]
5
3SK299
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2