NEC CE1N2R

DATA SHEET
COMPOUND TRANSISTOR
CE1N2R
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE1N2R is a transistor of on-chip high hFE resistor
PACKAGE DRAWING (UNIT: mm)
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ
• Low power consumption during driving:
VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60±10
V
Collector to emitter voltage
VCEO
60±10
V
Emitter to base voltage
VEBO
15
V
Collector current (DC)
IC(DC)
±2.0
A
IC(pulse) *
±3.0
A
Collector current (Pulse)
Base current (DC)
IB(DC)
0.03
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Tstg
−55 to +150
°C
Storage temperature
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D10846EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
CE1N2R
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Colletor to emitter voltage
Collector cutoff current
Symbol
VCEO(SUS)
ICBO
Conditions
IC = 2.0 A, IB = 5.0 mA, L = 6.0 mH
MIN.
TYP.
50
60
VCB = 40 V, IE = 0
MAX.
Unit
100
nA
V
−
DC current gain
hFE1 **
VCE = 5.0 V, IC = 0.2 A
700
1200
DC current gain
hFE2 **
VCE = 5.0 V, IC = 1.0 A
1000
1700
DC current gain
hFE3 **
VCE = 5.0 V, IC = 2.0 A
500
1300
Low level output voltage
VOL **
VI = 5.0 V, IC = 0.5 A
0.12
0.3
V
Low level input voltage
VIL **
VCE = 12 V, IC = 100 µA
0.43
0.4
V
680
884
Ω
13.0
kΩ
Input resistance
R1
E-to-B resistance
R2
Turn-on time
ton
Storage time
tstg
Fall time
tf
476
7.0
10.0
3000
−
−
IC = 1.0 A
0.4
µs
IBI = −IB2 = 10 mA
1.4
µs
VCC = 20 V, RL = 20 Ω
0.5
µs
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 %
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC sales representative.
2
Data Sheet D10846EJ2V0DS
CE1N2R
[MEMO]
Data Sheet D10846EJ2V0DS
3
CE1N2R
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4