DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency. FEATURES • Small dark current ID = 0.1 nA • High quantum efficiency η = 86 % @ λ = 1 300 nm η = 80 % @ λ = 1 550 nm • Cut-off frequency fC = 1.5 GHz MIN. • Detecting area size φ120 µm • Low operating voltage PACKAGE DIMENSIONS in millimeters NDL5471RC for FC Connector NDL5471RD for SC Connector 2– 2.3 2– 2.2 7.4 9.4±0.1 3.5 8.9±0.1 2– 4 Depth±1.5 13.44±0.1 19±0.1 2.0±0.1 14.2±0.2 8.0±0.1 3.4 4.4 2.0±0.1 8.5 7.92 4–C1.0 2.0 6.8 3 4 1 12.5 MIN. 6.0±0.1 12.5 MIN. 6.0±0.1 C0.5 M8×0.75 12.8±0.3 18.0±0.1 22.0±0.3 2.0 6.8 PIN CONNECTIONS Case 4 3 Cathode 1 Anode 3 4 1 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10263EJ4V0DS00 (4th edition) Date Published April 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1995, 1999 NDL5471R Series ORDERING INFORMATION Part Number Device Type NDL5471RC FC type receptacle module NDL5471RD SC type receptacle module ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Reverse Voltage VR 20 V Forward Current IF 10 mA Reverse Current IR 0.5 mA Optical Input Power Pin 8 mW Operating Case Temperature TC –40 to +85 °C Storage Temperature Tstg –40 to +85 °C ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Dark Current ID VR = 5 V 0.1 1.0 nA Terminal Capacitance Ct VR = 5 V, f = 1.0 MHz 1.1 1.5 pF Quantum Efficiency η λ = 1 300 nm, VR = 5 V 75 λ = 1 550 nm, VR = 5 V Responsivity S λ = 1 300 nm, VR = 5 V 2 fC VR = 5 V, RL = 50 Ω, −3dB Data Sheet P10263EJ4V0DS00 % 80 0.78 λ = 1 550 nm, VR = 5 V Cut-off Frequency 86 0.89 A/W 1.0 1.5 GHz NDL5471R Series TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified) WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY TEMPERATURE DEPENDENCE OF RESPONSIVITY Responsivity (Relative Value) ∆ S/S (%) Quantum Efficiency η (%) 100 80 60 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 10 λ = 1 300 nm 0 –10 –60 –40 –20 0 20 40 60 Wavelength λ ( µm) Case Temperature TC (˚C) REVERSE VOLTAGE DEPENDENCE OF DARK CURRENT TEMPERATURE DEPENDENCE OF DARK CURRENT 10 VR = 5 V Dark Current ID (nA) +50 ˚C 1.0 +25 ˚C 0 ˚C 0.1 –25 ˚C 0.01 0.001 0 10 20 1.0 0.1 0.01 0.001 –60 –40 –20 0 20 40 60 80 100 Reverse Voltage VR (V) Case Temperature TC (˚C) FREQUENCY RESPONSE REVERSE VOLTAGE DEPENDENCE OF TERMINAL CAPACITANCE Response (3dB/div.) 2.5 5.0 Terminal Capacitance Ct (pF) 5 VR = 10 V λ = 1 300 nm RL = 50 Ω 0 100 10 TC = +75 ˚C Dark Current ID (nA) 80 f = 1.0 MHz 1 0.5 0.01 0.1 1 10 100 Reverse Voltage VR (V) Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet P10263EJ4V0DS00 3 NDL5471R Series InGaAs PIN-PD Absolute maximum ratings Part number Pin (mW) NDL5421P/P1/P2 NDL5422P NDL5461P/P1/P2 NDL5471RC/RD NDL5481P/P1/P2 4 8 – 8 8 8 TC (°C) Typical characteristics (TC = 25°C) Tstg Detecting (°C) area size (µm) VR (V) φ 50 5 –40 to +85 –40 to +85 –40 to +70 –40 to +85 –40 to +85 –40 to +85 –40 to +85 –40 to +85 –40 to +85 –40 to +85 φ 50 φ 80 φ 120 φ 80 ID (nA) 5 5 5 10 Ct (pF) TYP. VR (V) 0.1 5 0.1 0.1 0.1 0.1 Data Sheet P10263EJ4V0DS00 – 5 5 10 S (A/W) fC TYP. λ (nm) TYP. (GHz) MIN. 0.7 1300 0.89 1550 0.94 1300 0.89 1550 1.00 1300 0.89 1550 0.94 1300 0.89 1550 1.00 1300 0.85 – 1.0 1.1 0.7 Package 2.5 Coaxial 2.5 Butterfly with AMP 2.5 Coaxial 1.5 Receptacle 2.5 Coaxial NDL5471R Series REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system C11159E Quality grades on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Semiconductor selection guide X10679E Data Sheet P10263EJ4V0DS00 5 NDL5471R Series [MEMO] 6 Data Sheet P10263EJ4V0DS00 NDL5471R Series [MEMO] Data Sheet P10263EJ4V0DS00 7 NDL5471R Series CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8