NEC NE23300

SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
FEATURES
NE23300
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high associated gain make it suitable for space applications.
4.5
4.0
Associated Gain, GA (dB)
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
Optimum Noise Figure, NFOPT (dB)
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
22
GA
3.5
20
3.0
18
NF
2.5
16
2.0
14
1.5
12
1.0
10
0.5
8
0
6
10
1
40
Frequency, f (GHz)
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
PART NUMBER
NE23300
PACKAGE OUTLINE
SYMBOLS
NFOPT1
GA1
P1dB
G1dB
IDSS
PARAMETERS AND CONDITIONS
00 (Chip)
UNITS
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
dB
dB
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
dB
dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
MIN
10.0
TYP
MAX
0.35
0.75
1.0
15.0
10.5
dBm
dBm
11.2
12.0
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
dB
dB
11.8
12.8
Saturated Drain Current, VDS = 2 V, VGS = 0 V
mA
15
40
80
VP
Pinch-off Voltage, VDS = 2 V, ID = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance, VDS = 2 V, ID = 10 mA
mS
45
Gate to Source Leakage Current, VGS = -5 V
µA
IGSO
RTH(CH-C)2
Thermal Resistance (Channel to Case)
°C/W
70
0.5
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories
NE23300
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS1 (TA = 25°C)
VDS = 2 V, IDS = 10 mA
SYMBOLS
PARAMETERS
UNITS
RATINGS
FREQ.
NFOPT
GA
VDS
Drain to Source Voltage
V
4.0
(GHz)
(dB)
(dB)
MAG
ANG
VGS
Gate to Source Voltage
V
-3.0
1
0.29
21.0
0.82
8
0.39
IDS
Drain Current
mA
IDSS
2
0.31
18.0
0.81
17
0.36
TCH
Channel Temperature
°C
175
4
0.35
15.0
0.76
41
0.33
-65 to +175
6
0.42
13.2
0.71
63
0.30
8
0.52
11.9
0.64
77
0.27
10
0.63
11.0
0.55
95
0.24
12
0.75
10.2
0.48
112
0.22
TSTG
°C
Storage Temperature
PT
Total Power Dissipation
mW
200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0.9
9.6
0.41
130
0.19
16
1.05
9.0
0.37
144
0.18
18
1.25
8.5
0.35
164
0.15
20
1.5
8.0
0.37
180
0.13
22
1.8
7.6
0.38
-166
0.11
24
2.2
7.3
0.39
-154
0.10
26
2.6
7.0
0.40
-142
0.08
Note:
1. Noise Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm)
long each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm)
long each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm)
long each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
NOISE FIGURE and GAIN
vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
120
150
Mounted on
Infinite
Heat sink
100
50
Associated Gain, GA (dB)
100
200
80
60
40
20
0
0
0
50
100 117
150
200
250
0
10
Ambient Temperature, TA (°C)
Transconductance, gm (mS)
VGS = 0 V
40
-0.1 V
-0.2 V
20
-0.3 V
10
30
40
50
TRANSCONDUCTANCE vs. DRAIN CURRENT
VDS = 2.0 V
50
30
20
Drain Current, IDS (mA)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current, IDS (mA)
Rn/50
14
Noise Figure, NF (dB)
Total Power Dissipation, (PT) mW
250
(TA = 25°C)
ΓOPT
2.0
16
1.6
14
1.2
12
NF
0.8
10
GA
Tuned at each IDS
0.4
8
-0.4 V
Tuned at 10 mA only
-0.5 V
0
0
0.5
1
1.5
2
Drain to Source Voltage,
2.5
VDS (V)
3
0
6
0
5
10
15
20
Drain Current,
25
IDS
30
(mA)
35
40
NE23300
TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C)
+90˚
j50
j25
+60˚
+120˚
j100
+30˚
+150˚
j10
0
26.5 GHz
10
25
50
26.5 GHz
100
S22
.1 GHz
S11
.1 GHz
S21
.1 GHz
S12
.1 GHz
0˚
26.5 GHz
26.5 GHz
-j10
-30˚
-150˚
-j25
-j100
-60˚
-120˚
-90˚
-j50
VDS = 2 V, IDS = 10 mA
FREQUENCY
S11
S21
(GHz)
MAG
ANG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
.999
.999
.998
.994
.974
.940
.903
.861
.822
.798
.750
.728
.724
.722
.724
.714
.695
.676
.665
.648
.632
.641
-1.8
-3.6
-8.9
-17.7
-34.6
-49.9
-63.2
-75.1
-85.9
-93.2
-102.2
-110.1
-117.8
-132.6
-146.6
-158.3
-169.5
-179.4
168.5
158.1
147.8
145.0
S12
MAG
ANG
MAG
5.854
5.850
5.846
5.797
5.614
5.299
4.919
4.512
4.210
3.900
3.642
3.420
3.304
3.045
2.876
2.668
2.483
2.296
2.115
1.897
1.817
1.832
178.8
177.2
173.5
167.0
154.1
142.1
131.1
121.4
112.5
105.5
97.8
89.9
83.8
69.8
57.2
46.2
35.7
26.5
13.7
0.4
-12.1
-14.3
.003
.005
.011
.022
.044
.063
.079
.089
.099
.103
.103
.104
.109
.115
.120
.125
.132
.143
.153
.163
.167
.168
S22
ANG
87.5
86.2
84.6
82.0
71.2
62.4
52.5
46.4
39.7
35.2
27.7
23.9
21.9
14.7
4.9
-2.4
-9.8
-10.5
-14.9
-17.7
-19.9
-18.3
MAG
.631
.632
.632
.628
.618
.598
.578
.556
.532
.528
.495
.479
.468
.433
.398
.376
.373
.394
.401
.388
.378
.372
K
S21
MAG2
0.05
0.04
0.02
0.00
0.04
0.09
0.17
0.23
0.29
0.35
0.48
0.55
0.54
0.56
0.57
0.61
0.66
0.66
0.68
0.75
0.79
0.76
(dB)
15.3
15.4
15.3
15.3
15.0
14.5
13.8
13.1
12.5
11.8
11.2
10.7
10.4
9.7
9.2
8.5
7.9
7.2
6.5
5.5
5.2
5.3
(dB)
32.9
30.7
27.3
24.2
21.1
19.2
17.9
17.0
16.3
15.8
15.5
15.2
14.8
14.2
13.8
13.3
12.7
12.1
11.4
10.7
10.4
10.4
ANG
-1.4
-2.5
-6.1
-12.1
-23.8
-34.9
-43.9
-51.5
-59.1
-60.8
-65.1
-69.1
-74.6
-86.7
-101.2
-112.4
-119.5
-124.8
-130.3
-139.5
-148.9
-152.5
VDS = 2 V, IDS = 30 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
.999
.999
.997
.991
.968
.929
.889
.846
.805
.777
.728
.709
.708
.707
.710
.704
.680
.667
.661
.654
.639
.641
See notes on back page.
S21
ANG
-2.0
-3.9
-9.5
-18.8
-36.6
-52.7
-66.4
-78.7
-89.3
-98.8
-107.8
-115.5
-123.2
-137.7
-151.1
-162.7
-173.2
177.0
164.9
153.8
144.0
142.2
S12
MAG
ANG
MAG
7.441
7.436
7.422
7.317
7.041
6.570
6.058
5.518
5.083
4.686
4.335
4.046
3.879
3.551
3.293
3.055
2.835
2.598
2.384
2.141
2.020
2.059
178.7
177.1
173.1
166.4
153.1
140.6
129.9
120.2
111.5
103.6
96.3
88.8
82.9
69.6
57.0
46.0
35.9
27.1
15.4
3.1
-9.2
-11.6
.002
.003
.009
.017
.032
.047
.059
.067
.076
.083
.082
.084
.089
.097
.102
.110
.118
.134
.149
.162
.171
.175
S22
ANG
87.9
86.5
84.7
82.2
72.3
63.9
56.1
50.5
44.2
39.5
32.5
30.6
30.2
23.8
15.7
8.8
2.4
-0.5
-4.0
-6.8
-10.4
-11.7
MAG
.484
.483
.483
.482
.472
.458
.447
.431
.411
.403
.375
.365
.359
.333
.311
.294
.300
.320
.336
.327
.310
.308
K
ANG
-1.1
-2.7
-6.5
-12.8
-24.8
-36.3
-45.3
-52.3
-60.0
-64.1
-67.7
-70.9
-76.6
-89.5
-105.0
-117.1
-124.4
-128.7
-133.8
-141.0
-150.5
-156.2
0.06
0.04
0.04
0.04
0.09
0.16
0.23
0.31
0.38
0.44
0.59
0.65
0.63
0.64
0.65
0.67
0.71
0.69
0.67
0.70
0.75
0.72
S21
MAG2
(dB)
(dB)
17.4
17.4
17.4
17.3
16.9
16.3
15.6
14.8
14.1
13.4
12.7
12.1
11.8
11.0
10.4
9.7
9.1
8.3
7.5
6.6
6.1
6.3
35.7
33.9
29.2
26.3
23.4
21.4
20.1
19.1
18.2
17.5
17.2
16.8
16.4
15.6
15.1
14.4
13.8
12.9
12.0
11.2
10.7
10.7
NE23300
TYPICAL COMMON SOURCE, REVERSE CHANNEL SCATTERING PARAMETERS1 (TA = 25°C)
+90˚
j50
j25
+60˚
+120˚
j100
+30˚
+150˚
j10
26.5 GHz
10
0
25
50
S22
.1 GHz
S11
.1 GHz
100
S21
.1 GHz
+180
˚
–
26.5 GHz
0˚
S12
.1 GHz
26.5 GHz
26.5 GHz
-30˚
-150˚
-j25
-j100
-60˚
-120˚
-90˚
-j50
VDS = -2 V, IDS = 10 mA
FREQUENCY
(GHz)
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
S11
MAG
0.998
0.999
0.998
1.000
0.998
0.997
0.992
0.987
0.979
0.965
0.960
0.955
0.954
0.968
0.982
0.986
0.970
0.962
0.978
1.039
1.109
1.112
S21
ANG
-0.8
-1.6
-3.8
-7.7
-15.3
-22.
-29.5
-36.3
-42.9
-48.9
-55.1
-60.7
-66.6
-77.1
-87.3
-98.1
-108.8
-120.3
-130.6
-141.1
-152.1
-154.7
MAG
1.492
1.490
1.489
1.480
1.480
1.474
1.464
1.439
1.428
1.390
1.379
1.320
1.323
1.298
1.301
1.302
1.268
1.199
1.119
1.071
1.076
1.068
ANG
-0.5
-1.3
-3.1
-5.9
-11.9
-17.9
-23.8
-29.2
-34.7
-40.2
-46.4
-52.2
-56.2
-66.4
-75.6
-85.8
-95.9
-104.0
-113.2
-123.5
-137.0
-140.6
S12
MAG
.003
.005
.013
.024
.051
.075
.101
.127
.151
.172
.191
.212
.243
.295
.348
.395
.453
.484
.518
.545
.574
.569
S22
ANG
93.9
86.2
89.7
88.7
80.6
78.3
73.5
69.2
64.8
59.2
55.5
51.8
47.2
36.7
24.6
12.1
1.1
-7.5
-16.8
-23.7
-33.5
-36.8
MAG
.586
.587
.585
.588
.585
.582
.577
.573
.575
.573
.573
.574
.577
.578
.571
.530
.493
.465
.467
.497
.485
.477
ANG
179.5
179.3
177.7
175.6
171.0
167.0
162.7
158.5
154.5
151.1
147.3
143.4
137.8
125.1
111.9
99.8
90.0
80.7
67.9
55.5
40.8
37.3
K
S21
MAG2
0.25
0.12
0.05
-0.03
0.02
0.01
0.04
0.06
0.09
0.15
0.17
0.18
0.16
0.13
0.11
0.14
0.21
0.20
0.14
-0.00
-0.11
-0.11
(dB)
3.5
3.5
3.4
3.4
3.4
3.4
3.3
3.2
3.1
2.9
2.8
2.4
2.4
2.3
2.3
2.3
2.1
1.6
1.0
0.6
0.6
0.6
(dB)
27.0
24.7
20.6
17.9
14.6
12.9
11.6
10.5
9.7
9.1
8.6
7.9
7.4
6.4
5.7
5.2
4.5
3.9
3.0
2.9
2.7
2.7
K
S21
MAG2
(dB)
(dB)
3.9
3.9
3.9
3.9
3.9
3.8
3.8
3.7
3.6
3.4
3.3
2.9
2.9
2.8
2.8
2.8
2.6
2.1
1.4
1.0
1.0
1.0
29.0
25.0
21.2
18.5
15.6
13.7
12.5
11.4
10.6
9.8
9.3
8.6
8.0
7.1
6.3
5.8
5.1
4.5
3.8
3.4
3.2
3.2
VDS = -2 V, IDS = 30 mA
FREQUENCY
S11
(GHz)
MAG
0.1
0.2
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
26.5
0.999
1.000
0.998
0.997
0.998
0.998
0.993
0.990
0.982
0.966
0.964
0.961
0.961
0.974
0.990
0.998
0.985
0.982
0.995
1.056
1.132
1.123
See notes on back page.
S21
ANG
-0.7
-1.5
-3.6
-7.4
-14.7
-21.6
-28.3
-34.8
-41.3
-48.0
-54.4
-59.9
-65.9
-76.3
-86.5
-97.1
-107.9
-119.1
-129.7
-140.0
-150.8
-153.5
MAG
ANG
1.574
1.575
1.569
1.565
1.562
1.558
1.550
1.525
1.518
1.472
1.463
1.395
1.401
1.376
1.378
1.383
1.350
1.273
1.173
1.121
1.118
1.119
-0.3
-1.3
-2.9
-6.1
-12.0
-17.8
-23.6
-28.9
-34.4
-39.7
-46.0
-52.0
-56.2
-65.7
-75.6
-85.8
-96.1
-104.0
-112.5
-122.6
-135.6
-139.9
S12
MAG
.002
.005
.012
.022
.043
.066
.087
.110
.132
.155
.172
.193
.220
.268
.319
.364
.417
.448
.485
.513
.537
.539
S22
ANG
135.9
96.9
87.2
87.9
82.0
79.8
75.1
71.7
67.0
61.7
57.8
55.0
51.0
40.8
28.9
17.1
6.0
-2.0
-11.7
-18.5
-27.8
-30.6
MAG
.687
.686
.687
.685
.684
.685
.680
.678
.680
.677
.680
.684
.690
.700
.696
.651
.612
.582
.582
.611
.606
.584
ANG
179.7
179.2
177.8
175.9
171.3
167.5
164.0
159.7
156.3
153.1
149.6
145.7
140.6
128.7
116.0
104.3
95.2
87.1
74.2
61.8
48.3
45.2
-0.33
-0.09
0.06
0.02
0.01
-0.01
0.03
0.02
0.06
0.11
0.13
0.13
0.10
0.07
0.07
0.10
0.17
0.15
0.08
-0.07
-0.18
-0.15
NE23300
NE23300 LINEAR MODEL
CHIP DIMENSIONS (TA = 25°C)
NE23300 (CHIP)
SCHEMATIC 0.1- 26 GHz
LG
RG
CDG
G
RD
LD
GGS
VC
120
CGS
56
CDC
_
CIN
400
D
+
COUT
RDS
66
CDS
G (f) VC
RI
56
D
D
350
RS
°C
LS
S
S
Element
Name
VDS = 2 V, 0.1 < f < 26 GHz
Element Value
Units
Cin
Lg
Ls
Ld
Cout
CDS
CDG
CGS
CDC
f
T
0.098
19.544
8.309
12.998
0.001
0.028
0.043
0.000
0.084
427.446
3.226
pF
nH
nH
nH
pF
pF
pF
S
pF
GHz
ps
RI
RS
RDS
CGS
G(f, Vc)
10 mA
0.376
1.138
209
0.222
0.078
20 mA
0.506
0.911
162
0.235
0.100
G
G
61
S
88
45
Chip Thickness: 140 µm typical
31 47
25
13
Ohms
Ohms
Ohms
pF
S
Notes:
1. S-Parameters include Bond Wires:
Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm) long, each wire.
Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm) long, each wire.
Source: Total 4 wires, 2 per side, 0.0071" (180 µm) each wire.
Wire: 0.0007" (17.8 µm) dia. gold.
2.
Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -9/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE