SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B (SPACE QUALIFIED) OUTLINE DIMENSIONS (Units in mm) FEATURES • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz PACKAGE OUTLINE 83B 1.88 ± 0.3 • HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz 1 • GATE LENGTH = LG = 0.3 µm • GATE WIDTH = WG = 280 µm • HERMETIC SEALED CERAMIC PACKAGE 0.5 ± 0.1 1.88 ± 0.3 4 2 • HIGH RELIABILITY 4.0 MIN (ALL LEADS) 3 DESCRIPTION 1.0 ± 0.1 The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. The mushroom gate structure also results in low noise figure and high associated gain. The device is housed in a rugged hermetically sealed metal ceramic stripline package selected for industrial and space applications. APPLICATION NEC's stringent quality assurance and test procedures assure the highest reliability and performance. • BEST SUITED FOR LOW NOISE AMPS STAGE AT C AND X BAND 1.45 MAX +0.07 0.1 -0.03 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE23383B UNITS MIN TYP MAX 0.35 0.45 NF Noise Figure at VDS = 2 V, ID = 10 mA, f = 4 GHz dB GA Associated Gain at VDS = 2 V, ID = 10 mA, f = 4 GHz dB 13.0 15.0 IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 80 V -0.2 -0.8 -2.0 45 70 VGS(off) Gate to Source Cut off Voltage at VDS = 2 V, ID = 100 µA gM Transconductance at VDS = 2 V, ID = 10 mA ms IGDO Gate to Drain Leakage Current at VGD = -3 V µA 0.5 10 IGSO Gate to Source Leakage Current at VGS = -3 V µA 0.5 10 California Eastern Laboratories NE23383B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V –3.0 Drain Current mA IDSS PTOT Total Power Dissipation mW 165 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 ID RECOMMENDED OPERATING CONDITIONS (TA = 25°C) PART NUMBER NE23383B SYMBOLS PARAMETERS VDS Drain to Source Voltage UNITS MIN TYP MAX V 2 3 ID Drain Current mA 10 20 PIN Input Power dBm 0 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VGS = 0 V 50 200 Drain Current, ID (mA) Total Power Dissipation, PTOT (mW) 250 150 100 50 0 50 100 150 200 -0.2 V 30 -0.4 V 20 -0.6 V 10 0 250 1 2 3 4 5 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21|2 (dB) 50 VDS = 2 V 40 Drain Current, ID (mA) 40 30 20 10 0 VDS = 2 V ID = 10 mA MSG 20 MAG 16 |S21| 2 12 8 4 -2.0 -1.0 Gate to Source Voltage, VGS (V) 0 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 NE23383B TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, ID = 10 mA ΓOPT FREQ. NFmin GA (GHz) (dB) (dB) MAG ANG Rn/50 2.0 0.32 16.0 0.90 26 0.35 4.0 0.35 15.0 0.80 51 0.29 6.0 0.41 13.7 0.70 75 0.22 8.0 0.50 12.6 0.61 101 0.15 10.0 0.62 11.5 0.53 127 0.09 12.0 0.75 10.5 0.48 154 0.05 14.0 0.88 9.6 0.45 -178 0.05 16.0 1.02 8.8 0.44 -147 0.07 18.0 1.15 8.0 0.48 -115 0.14 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE23383B VDS = 2 V, ID = 10 mA FREQUENCY S11 GHz MAG 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.96 0.91 0.88 0.80 0.77 0.69 0.63 0.59 0.57 0.55 0.54 0.53 0.53 0.53 0.53 0.52 0.50 S21 ANG -39.94 -53.81 -64.11 -74.58 -85.67 -98.42 -115.67 -132.86 -145.83 -154.21 -164.09 -179.26 169.19 157.02 149.49 136.67 117.26 MAG 5.00 4.54 4.07 3.85 3.73 3.71 3.64 3.44 3.18 2.97 2.91 2.88 2.78 2.65 2.69 2.69 2.59 S12 S22 K ANG MAG ANG MAG ANG 141.49 125.98 113.15 100.67 88.48 75.46 60.60 46.21 32.90 22.06 10.84 -2.27 -16.05 -29.31 -41.55 -57.64 -76.16 0.03 0.04 0.05 0.05 0.06 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 66.70 58.07 52.54 47.00 42.12 36.19 28.39 21.00 13.97 7.90 6.58 3.61 -4.59 -9.21 -10.08 -17.82 -30.52 0.52 0.54 0.54 0.57 0.51 0.46 0.41 0.40 0.41 0.43 0.46 0.47 0.46 0.49 0.55 0.58 0.61 -25.96 -38.70 -44.90 -51.85 -57.28 -66.10 -80.09 -95.43 -109.27 -115.64 -120.71 -131.41 -146.02 -156.04 -166.37 -177.96 -159.46 0.22 0.36 0.46 0.67 0.76 0.90 0.98 1.07 1.12 1.26 1.24 1.15 1.20 1.18 0.98 0.85 0.81 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = EXCLUSIVE NORTH AMERICAN AGENT FOR 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE