ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. Optimum Noise Figure, NFOPT (dB) 1.4 24 1.2 21 Associated Gain, GA (dB) • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz GA 1 18 0.8 15 NF 0.6 12 0.4 9 0.2 6 0 3 1 10 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA1 P1dB G1dB IDSS PARAMETERS AND CONDITIONS NE24283B 83B UNITS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA MIN 10.0 TYP MAX 0.35 0.6 0.7 16.0 11.0 dBm dBm 9.5 11.0 Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA dB dB 11.8 12.8 Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 -0.2 VP Pinch-off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 60 Gate to Source Leakage Current at VGS = -3 V µA 0.5 750 IGSO RTH (CH-A) Thermal Resistance (Channel-to-Ambient) °C/W RTH (CH-C) Thermal Resistance (Channel-to-Case) °C/W 10 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGSO Gate to Source Voltage V –3.0 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 10 mA ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 1 0.30 22.0 0.88 13 0.33 IDS Drain Current mA IDSS 2 0.31 19.0 0.82 30 0.31 IGRF Gate Current µA 100 4 0.35 16.0 0.73 57 0.26 175 6 0.38 14.0 0.67 83 0.20 8 0.43 12.5 0.63 105 0.13 10 0.50 11.5 0.57 128 0.09 12 0.60 11.0 0.52 156 0.06 14 0.71 10.3 0.46 -176 0.05 16 0.85 9.8 0.40 -155 0.04 18 1.00 9.2 0.36 -134 0.04 20 1.20 9.0 0.33 -109 0.05 TCH °C Channel Temperature TSTG Storage Temperature PT Total Power Dissipation °C -65 to +175 mW 165 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 200 Noise Figure, NF (dB) 150 Infinite Heat Sink 100 Free Air 14 1.2 13 12 1 NF 11 0.8 GA 0.6 10 0.4 9 0.2 8 50 0 0 25 50 75 100 125 150 175 7 0 200 5 10 15 20 30 25 35 Ambient Temperature, TA (°C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 2 V 100 VGS 0 V 50 Drain Current, IDS (mA) 0 Drain Current, IDS (mA) 1.4 40 -0.2 V 30 -0.4 V 20 -0.6 V 10 Transconductance, gm (mS) Total Power Dissipation, PT (mW) 250 80 60 40 20 0 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) Associated Gain, GA (dB) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 10 15 20 25 30 35 40 45 5 Gate to Source Voltage, VGS (V) 50 NE24283B TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j1.0 90˚ j0.5 0.2 0.5 1.0 60˚ 150˚ 18 GHz 18 GHz j0.2 0.0 0.0 120˚ j2.0 30˚ j5.0 2.0 5.0 S11 S22 0.1 GHz 0.1 GHz -j0.2 180˚ S21 .02 .04 .06 .08 S12 0˚ 0.1 GHz 0.1 GHz 10 2 18 GHz -j5.0 4 -180˚ -30˚ 6 -j2.0 -j0.5 -j1.0 Coordinates in Ohms Frequency in GHz (VDS = 3 V, IDS = 20 mA) 8 -120˚ 18 GHz -60˚ -90˚ NE24283B VDS = 3 V, IDS = 20 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 1.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 0.999 0.999 0.998 0.989 0.976 0.960 0.940 0.920 0.900 0.878 0.852 0.828 0.806 0.784 0.769 0.753 0.739 0.728 0.710 0.692 0.675 0.661 0.644 0.623 0.604 0.586 0.573 0.559 0.547 0.535 0.524 0.511 0.498 0.481 0.463 0.445 0.425 0.409 -1.9 -3.8 -9.5 -18.8 -27.8 -36.7 -45.3 -53.6 -61.6 -69.7 -77.4 -84.5 -91.6 -97.9 -104.3 -110.3 -115.8 -121.3 -126.7 -131.7 -136.3 -141.0 -146.5 -152.1 -158.0 -163.6 -169.2 -174.9 179.7 174.7 169.8 164.4 158.6 152.4 145.9 138.9 131.8 125.1 5.596 5.570 5.550 5.497 5.405 5.304 5.188 5.048 4.899 4.749 4.580 4.411 4.255 4.150 4.022 3.883 3.757 3.644 3.537 3.448 3.391 3.319 3.269 3.209 3.161 3.101 3.047 2.992 2.936 2.880 2.832 2.806 2.777 2.752 2.727 2.702 2.663 2.602 177.8 176.0 170.2 160.9 151.8 142.9 134.1 125.6 117.3 109.2 101.4 93.6 86.3 79.4 72.2 65.3 58.5 52.0 45.6 39.3 32.9 26.8 20.4 13.7 7.2 0.9 -5.6 -12.3 -19.0 -25.7 -32.5 -39.2 -46.2 -53.4 -60.9 -68.8 -76.5 -84.2 0.001 0.002 0.005 0.010 0.015 0.021 0.025 0.030 0.033 0.037 0.041 0.043 0.046 0.048 0.051 0.053 0.055 0.055 0.059 0.062 0.064 0.066 0.067 0.071 0.073 0.076 0.078 0.079 0.081 0.083 0.085 0.088 0.091 0.093 0.097 0.099 0.102 0.102 89.7 88.4 86.5 78.0 73.2 68.7 62.7 57.7 53.4 48.8 44.7 40.0 37.6 33.7 29.6 26.3 23.2 20.9 18.4 15.5 11.5 8.7 5.6 2.8 -1.7 -4.7 -8.6 -12.4 -16.3 -20.9 -24.6 -29.1 -33.8 -39.6 -45.5 -50.9 -56.6 -63.8 0.494 0.493 0.493 0.490 0.485 0.482 0.477 0.471 0.466 0.459 0.452 0.444 0.438 0.430 0.425 0.423 0.425 0.428 0.432 0.435 0.436 0.437 0.435 0.431 0.428 0.426 0.432 0.441 0.452 0.467 0.480 0.490 0.497 0.500 0.505 0.512 0.525 0.546 K MAG1 0.134 0.066 0.043 0.170 0.243 0.290 0.376 0.430 0.491 0.547 0.612 0.698 0.741 0.801 0.829 0.869 0.899 0.945 0.950 0.974 1.010 1.035 1.075 1.085 1.115 1.124 1.125 1.139 1.135 1.130 1.122 1.102 1.088 1.098 1.082 1.080 1.064 1.069 37.479 34.448 30.453 27.401 25.567 24.024 23.171 22.260 21.716 21.084 20.481 20.111 19.661 19.368 18.969 18.649 18.345 18.212 17.778 17.452 16.621 15.875 15.214 14.778 14.301 13.963 13.764 13.520 13.358 13.209 13.102 13.090 13.040 12.804 12.738 12.639 12.621 12.461 ANG -1.1 -2.7 -6.7 -13.3 -19.8 -26.1 -32.4 -38.5 -44.5 -50.2 -55.9 -61.7 -67.6 -73.9 -79.9 -85.9 -91.8 -97.1 -102.4 -107.3 -112.1 -116.9 -122.4 -128.6 -135.3 -142.6 -150.2 -157.5 -164.1 -170.1 -175.8 178.1 171.4 164.1 155.8 146.7 137.7 129.4 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE24283B OUTLINE DIMENSIONS (Units in mm) ORDERING INFORMATION PACKAGE OUTLINE 83B 1.88 ± 0.3 PART NUMBER AVAILABILITY PACKAGE OUTLINE NE24283B Bulk 83B 1. Source 2. Drain 3. Source 4. Gate S 0.5 ± 0.1 1.88 ± 0.3 G D 4.0 MIN (ALL LEADS) S 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE