NEC NE321000

DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and
space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number
NE321000
Quality Grade
Standard (Grade D)
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
NE321000)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
200
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
Note Chip mounted on an Alumina heatsink (size: 3 × 3 × 0.6 t)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14270EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
NE321000
RECOMMENDED OPERATING CONDITIONS (TA = +25 °C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
–
–
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = –3 V
–
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
15
40
70
mA
VGS(off)
VDS = 2 V, IDS = 100 µA
–0.2
–0.7
–2.0
V
Transconductance
gm
VDS = 2 V, IDS = 10 mA
40
55
–
mS
Noise Figure
NF
–
0.35
0.45
dB
NF Associated Gain
Ga
VDS = 2 V, IDS = 10 mA
f = 12 GHz
12.0
13.5
–
dB
Gate to Source Cut Off Voltage
Remark RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
2
Data Sheet P14270EJ2V0DS00
NE321000
TYPICAL CHARACTERISTICS (TA = +25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
250
100
200
80
Drain Current ID (mA)
Total Power Dissipation Ptot (mW)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
60
VGS = 0 V
40
–0.2 V
20
50
–0.4 V
–0.6 V
0
50
100
150
200
0
250
1.0
2.0
Ambient Temperature TA (°C)
Drain to Source Voltage VDS (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
Drain Current ID (mA)
60
40
20
0
–2.0
–1.0
0
Maximum Stable Gain MSG. (dB)
Maximum Available Gain MAG. (dB)
2
Forward Insertion Gain |S21s| (dB)
VDS = 2 V
VDS = 2 V
ID = 10 mA
20
MSG.
16
12
|S21S|2
8
Gate to Source Voltage VGS (V)
4
1
2
4
6
8 10
14
20 30
Frequency f (GHz)
Data Sheet P14270EJ2V0DS00
3
NE321000
GAIN CALCULATIONS
S21
S12
MAG. =
S21
S12
K=
1 + | ∆ |2 – |S11 |2 – |S22|2
2 |S12| |S21|
∆ = S11·S22 – S21·S12
k ± k2 – 1
NOISE FIGURE, NF ASSOCIATED GAIN vs.
FREQUENCY
NOISE FIGURE, NF ASSOCIATED GAIN vs.
DRAIN CURRENT
24
16
12
1.0
8
0.5
15
Ga
14
Noise Figure NF (dB)
20
NF Associated Gain Ga (dB)
Ga
Noise Figure NF (dB)
VDS = 2 V
f = 12 GHz
VDS = 2 V
ID = 10 mA
13
2.0
12
1.5
11
1.0
0.5
NF
NF
0
1
2
0
4
6
8 10
14
4
20 30
Frequency f (GHz)
4
Data Sheet P14270EJ2V0DS00
10
20
Drain Current ID (mA)
30
NF Associated Gain Ga (dB)
MSG. =
NE321000
S-PARAMETERS
MAG. AND ANG.
VDS = 2 V, ID = 10 mA
FREQUENCY
GHz
MAG.
S11
ANG.
MAG.
S21
ANG.
MAG.
S12
ANG.
MAG.
ANG.
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
0.998
0.987
0.981
0.970
0.962
0.952
0.941
0.927
0.912
0.898
0.882
0.868
0.855
0.843
0.827
0.807
0.796
0.793
0.788
0.782
0.783
0.785
0.778
0.766
0.757
0.753
0.755
0.748
0.743
−13.2
−19.3
−25.7
−32.7
−38.6
−44.4
−50.1
−55.6
−61.5
−66.9
−71.6
−75.9
−80.2
−84.2
−88.5
−92.6
−95.3
−98.0
−101.2
−103.8
−106.4
−109.9
−113.4
−116.0
−118.1
−119.9
−121.6
−124.2
−126.2
4.72
4.70
4.62
4.50
4.45
4.37
4.28
4.17
4.03
3.90
3.79
3.66
3.54
3.42
3.30
3.16
3.05
2.97
2.89
2.79
2.70
2.62
2.53
2.46
2.40
2.33
2.29
2.23
2.16
170.2
165.6
160.5
155.7
151.6
147.4
143.5
139.7
135.6
131.5
128.0
124.9
121.9
119.0
115.8
112.9
110.8
108.7
106.2
104.1
101.9
99.5
97.4
95.8
93.8
92.5
90.6
88.4
86.8
0.020
0.030
0.040
0.050
0.059
0.067
0.074
0.081
0.087
0.094
0.100
0.104
0.108
0.111
0.115
0.116
0.117
0.120
0.123
0.125
0.128
0.132
0.135
0.135
0.135
0.133
0.136
0.135
0.136
81.3
77.3
73.2
69.4
65.3
62.2
58.6
55.2
51.5
48.0
44.9
42.0
39.0
36.2
33.5
30.5
28.5
27.9
26.5
24.9
23.3
20.7
18.8
16.8
15.3
14.3
14.0
12.6
11.3
0.602
0.599
0.593
0.588
0.583
0.574
0.567
0.564
0.552
0.541
0.536
0.526
0.518
0.509
0.501
0.494
0.488
0.489
0.487
0.484
0.486
0.477
0.474
0.481
0.469
0.463
0.484
0.481
0.475
−10.0
−14.8
−19.9
−25.6
−30.1
−34.4
−39.1
−43.1
−47.2
−52.0
−55.5
−58.6
−62.1
−65.0
−68.3
−71.2
−73.2
−75.2
−77.4
−80.9
−82.7
−84.1
−87.9
−88.3
−89.2
−91.6
−93.5
−95.2
−97.5
Data Sheet P14270EJ2V0DS00
S22
5
NE321000
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA
Γopt
Freq. (GHz)
6
NFmin. (dB)
Ga (dB)
Rn/50
MAG.
ANG. (deg.)
2.0
0.21
19.5
0.94
3.7
0.31
4.0
0.22
17.6
0.87
8.2
0.31
6.0
0.24
15.9
0.82
13.3
0.32
8.0
0.26
14.6
0.77
18.8
0.32
10.0
0.28
13.5
0.73
24.8
0.32
12.0
0.31
12.7
0.69
31.4
0.31
14.0
0.38
12.1
0.67
38.4
0.31
16.0
0.45
11.6
0.64
45.9
0.30
18.0
0.52
11.3
0.63
53.9
0.29
20.0
0.59
11.2
0.62
62.4
0.28
22.0
0.66
11.1
0.61
71.4
0.27
24.0
0.72
11.2
0.62
80.8
0.25
26.0
0.79
11.2
0.63
90.8
0.23
Data Sheet P14270EJ2V0DS00
NE321000
CHIP DIMENSIONS (Unit: µm)
56
27
58
224
Drain
300
Source
Source
63
38
38
38
38
36
69
Gate
61
300
56
38
26
Thickness = 140 µ m
: BONDING AREA
Data Sheet P14270EJ2V0DS00
7
NE321000
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 °C − 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 °C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTION
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection
only and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
8
Data Sheet P14270EJ2V0DS00
NE321000
[MEMO]
Data Sheet P14270EJ2V0DS00
9
NE321000
[MEMO]
10
Data Sheet P14270EJ2V0DS00
NE321000
[MEMO]
Data Sheet P14270EJ2V0DS00
11
NE321000
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8