NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15 4.4 MAX. Drain 1.0 MAX. 0X001 1.5±0.2 Source A • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz Gate 0.6±0.15 5.7 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 4.2 MAX. 2 • HIGH OUTPUT POWER: +32 dBm TYP Gate Drain 0.4±0.15 0.8 MAX. 5.7 MAX. 0.2±0.1 0.9±0.2 DESCRIPTION 3.6±0.2 APPLICATIONS NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. • DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets • 0.7-2.5 GHz FIXED WIRELESS ACCESS • W-LAN • SHORT RANGE WIRELESS • RETAIL BUSINESS RADIO • SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE5520279A PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL ηADD Output Power 79A UNITS MIN TYP dBm 30.5 32.0 Linear Gain dB Power Added EfÞciency % MAX f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain 10 40 TEST CONDITIONS 45 Drain Current mA IGSS Gate-to-Source Leakage Current nA 100 VGS = 5.0 V IDSS Saturated Drain Current (Zero Gate Voltage Drain Current) nA 100 VDS = 6.0 V VTH Gate Threshold Voltage V 1.9 VDS = 3.5 V, IDS = 1 mA ID Electrical DC Characteristics CHARACTERISTICS gm BVDSS RTH Transconductance S Drain-to-Source Breakdown Voltage V Thermal Resistance 800 1.0 15 °C/W 1.4 1.3 VDS = 3.5 V, IDS = 700 mA 18 IDSS = 10 µA 8 Channel-to-Case Notes: 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm California Eastern Laboratories NE5520279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS SYMBOLS PARAMETERS UNITS RATINGS PARAMETERS UNITS TYP MAX VDS Drain Supply Voltage V 15.0 VDS Drain to Source Voltage V 3.0 6.0 VGS Gate Supply Voltage V 5.0 VGS Gate Supply Voltage V 2.0 3.0 Drain Current A 0.6 IDS Drain Current1 A 0.8 1.0 A 1.2 PIN Input Power f = 1.8 GHz, VDS = 3.2 V dBm 25 30 ID 2 ID Drain Current (Pulse Test) PT Total Power Dissipation W 12.5 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle 50%, Ton = 1 s. ORDERING INFORMATION PART NUMBER NE5520279A-T1 QTY • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 1 kpcs/Reel Note: 1. Duty Cycle ≤ 50%, Ton ≤ 1 s. LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz) FREQUENCY (GHz) Zin (Ω) ZOL (Ω) 1 1.8 1.77 −j6.71 1.25 −j5.73 Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power. NE5520279A TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 Pout 75 750 25 ηd IDS η dd 20 15 500 50 250 25 0 0 15 10 5 20 25 f = 1.8 GHz VDS = 3.2 V Pin = 25 dBm 30 25 1500 75 ηd IDS 50 1000 20 η dd 25 500 15 4 f = 1.8 GHz ∆f = 1 MHz VDS = 3.2 V IDQ = 700 mA -30 IM3 -40 IM5 -50 -60 0 0 25 -70 10 30 25 20 15 30 35 Input Power,Pin (dBm) Average Two Tone Ouput Power, Pout (dBm) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 1500 75 ηd η dd 1000 25 50 IDS 500 20 15 10 15 20 25 Input Power,Pin (dBm) 30 0 35 25 0 Output Power, Pout (dBm) 30 2000 Drain EfÞciency, ηd (%) Power Added EfÞciency, ηadd (%) Pout 35 40 2500 f = 2.00 GHz VDS = 5.0 V Pin = 27 dBm Ids(mA) 2500 f = 2.00 GHz VDS = 5.0 V IDQ = 300 mA 0 0 3 2 1 -20 IMD, (dBc) 25 Drain EfÞciency, ηd (%) Power Added EfÞciency, ηadd (%) Ids(mA) 100 Ids(mA) Output Power, Pout (dBm) 250 15 -10 2000 40 Output Power, Pout (dBm) 50 IMD vs. TWO TONE OUTPUT POWER 30 20 500 Gate to Source Voltage, Vgs (V) Pout 15 75 η dd 20 0 2500 10 750 ηd 10 30 35 5 100 25 OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER 10 1000 IDS Input Power,Pin (dBm) f = 1.8 GHz VDS = 3.2 V IDQ = 700 mA Pout Pout 35 2000 100 1500 75 1000 50 500 25 30 ηd η dd 25 IDS 20 15 0 0 1 2 3 Gate to Source Voltage, Vgs (V) 4 0 Drain EfÞciency, ηd (%) Power Added EfÞciency, ηadd (%) 10 Output Power, Pout (dBm) Ids(mA) 1000 30 1250 35 Drain EfÞciency, ηd (%) Power Added EfÞciency, ηadd (%) Output Power, Pout (dBm) f = 1.8 GHz VDS = 3.2 V IDQ = 300 mA Drain EfÞciency, ηd (%) Power Added EfÞciency, ηadd (%) 1250 35 Ids(mA) OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER NE5520279A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This Þle and many other s-parameter Þles can be downloaded from www.cel.com 90û j50 120û j100 j25 60û S21 150û S11 30û j10 0 10 25 100 50 S12 180û 0 0û S22 -j10 Coordinates in Ohms Frequency in GHz VD = 5.0 V, ID = 400 mA -j100 -j25 -150û -30û -120û -60û -90û -j50 NE5520279A VD = 5.0 V, ID = 400 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 S11 MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971 S21 ANG -152.5 -166.9 -172.4 -175.6 -177.9 -179.8 178.7 177.3 176.0 174.6 173.6 172.2 171.0 169.9 168.7 167.5 166.3 165.2 164.1 162.9 161.8 160.6 159.5 158.3 157.3 156.3 155.4 154.5 153.8 152.9 152.5 151.5 150.8 150.1 149.6 MAG 11.510 5.882 3.896 2.897 2.278 1.865 1.569 1.346 1.168 1.024 0.911 0.812 0.728 0.655 0.594 0.541 0.494 0.451 0.415 0.384 0.356 0.329 0.305 0.285 0.267 0.248 0.232 0.217 0.204 0.192 0.180 0.170 0.161 0.152 0.144 S12 ANG 98.5 87.7 80.8 75.2 70.1 65.3 60.7 56.5 52.4 48.5 44.7 40.9 37.5 34.1 30.8 27.9 25.1 22.4 19.6 17.1 14.9 12.6 10.2 7.7 5.8 4.0 2.0 0.0 - 1.6 - 3.1 - 4.5 - 6.1 - 7.6 - 8.8 - 10.0 MAG 0.021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.003 S22 ANG 10.3 0.2 - 5.2 - 9.2 - 12.9 - 15.7 - 19.3 - 21.8 - 24.5 - 27.2 - 28.8 - 30.8 - 33.3 - 33.9 - 36.0 - 36.6 - 37.3 - 38.5 - 38.5 - 38.8 - 36.9 - 40.8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.953 0.952 0.954 0.958 0.961 0.960 0.960 0.964 0.965 0.963 ANG -170.1 -175.4 -177.5 -178.5 -179.3 179.9 179.1 178.4 177.9 177.2 176.5 175.5 174.7 173.9 172.9 172.2 171.5 170.7 169.8 169.0 168.5 167.8 167.0 166.0 165.5 164.9 164.2 163.2 162.4 161.9 161.1 160.2 159.4 158.6 157.6 K MAG1 0.03 0.07 0.11 0.14 0.20 0.27 0.30 0.32 0.36 0.39 0.36 0.42 0.47 0.62 0.68 0.76 0.98 1.22 1.35 1.33 1.45 1.74 2.04 2.04 2.04 2.59 3.32 4.54 5.69 5.78 9.71 9.31 9.54 7.96 5.89 (dB) 27.43 24.21 22.51 21.31 20.41 19.66 19.05 18.55 18.12 17.79 17.48 17.21 16.93 16.84 16.65 16.54 16.58 13.67 12.97 12.95 12.62 11.58 11.01 11.00 11.27 10.34 9.53 8.76 8.58 8.26 7.87 7.08 7.19 6.89 6.46 Note: 1. Gain Calculation: MAG = |S21| |S12| (K – K 2 -1 ). When K ≤ 1, MAG is undefined and MSG values are used. MAG = Maximum Available Gain MSG = Maximum Stable Gain MSG = |S21| ,K= |S12| 1 + | ∆ | 2 - |S11| 2 - |S22| 2 2 |S12 S21| , ∆ = S11 S22 - S21 S12 NE5520279A APPLICATION CIRCUIT (2.40-2.48 GHz) P.C.B. LAYOUT (Units in mm) 79A PACKAGE VG VD J3 J4 4.0 C3 C9 C11 C2 C8 C10 1.7 P1 GND 1.0 Gate 0.5 C12 1.2 5.9 Drain C13 IN C5 C6 OU C15 A2 C14 R1 U1 98 J1 C1 J2 Through hole φ 0.2 × 33 C4 RF IN Source RF OUT 0.5 0.5 6.1 er=4.2 500855 t=0.028 5.74mm .30mm .63mm J3 J4 +Vg +Vd C13 C11 C9 C2 C3 C10 C8 C12 R1 C1 J1 C5 RF INPUT NE5520279A C7 C14 C4 C15 NE5520279A PARTS LIST 1 1 4 2 1 1 1 1 2 1 2 2 2 1 1 1 2 1 SD-500881 TF-100637 MA101J MCR03J200 600S2R7CW 600S2R2BW 600S1R2BW 600S5R6CW 600S3R3CW TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520279A 703401 1250-003 2052-5636-02 FD-500855B J2 RF OUTPUT C2,C3 R1 C4 C15 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB SCHEMATIC DIAGRAM NE5520279A-EVAL TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD CASE 1 100pF CAP MURATA 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 2.2pF CAP ATC 0805 1.2pF CAP ATC 0603 5.6pF CAP ATC 0603 3.3pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 NE5520279A TYPICAL APPLICATION CIRCUIT PERFORMANCE (TA = 25°C) OUTPUT POWER vs. INPUT POWER IM3 vs. OUTPUT POWER -20.0 36 f= 2.44 GHz -20.0 f= 2.44 GHz -20.0 32 -25.0 30 IM3 (dBc) Output Power, POUT (dBm) 34 28 26 -30.0 -35.0 -40.0 3.6 V, 300 mA 3.6 V, 300 mA 24 22 3.6 V, 500 mA -45.0 3.6 V, 500 mA 6.0 V, 300 mA 6.0 V, 300 mA 6.0 V, 500 mA 20 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Input Power, PIN (dBm) -50.0 -55.0 12 6.0 V, 300 mA 14 16 18 20 22 24 26 28 30 Output Power, POUT (dBm), Each Tone NE5520279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales ofÞce. Soldering Method Soldering Conditions Condition Symbol Infrared Reßow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reßow processes Maximum chlorine content of rosin ßux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reßow processes Maximum chlorine content of rosin ßux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of ßow processes Maximum chlorine content of rosin ßux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin ßux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 09/03/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd.