PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz • HIGH COLLECTOR CURRENT: IC MAX = 100 mA 0.25 1 0.4 1.0 • 0.5 2 DESCRIPTION 0.15 0.6 0.2 0.15 BOTTOM VIEW 0.55 The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.25 3 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE688M23 2SC5651 M23 UNITS MIN GHz 4 fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz dB |S21E|2 hFE2 Forward Current Gain at VCE = 1 V, IC = 3 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF TYP 5 1.9 3 MAX 2.5 4 80 145 0.1 0.1 0.7 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE688M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation mW TBD TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 120 VCE = 2 V 100 Collector Current, IC (mA) SYMBOLS Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 Base to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1000 100 VCE = 2 V 450 µA 80 DC Current Gain, hFE Collector Current, IC (mA) IB 50 µA step 350 µA 60 250 µA 40 150 µA 20 100 IB = 50 µA 10 0 2 4 6 0.01 8 1 10 100 Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 10 8 10 VCE= 3 V f = 2 GHz 7 VCE = 3 V f = 1 GHz GA 8 Noise Figure, NF (dB) Gain Bandwidth Product, fT (GHz) 0.1 Collector to Emitter Voltage, VCE (V) 6 5 4 3 2 8 6 6 4 4 2 2 Associated Gain, GA (dB) 0 1 NF 0 0 0 1 10 100 Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR 1 10 100 Collector Current, IC (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE