PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance • LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz • HIGH COLLECTOR CURRENT: ICMAX = 100 mA 1.2±0.05 0.8±0.1 2 0.45 TC 1.4 ±0.1 0.45 (0.9) 0.3±0.1 3 1 0.2±0.1 DESCRIPTION The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE856M03 2SC5432 M03 UNITS MIN GHz 3.0 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB |S21E|2 hFE2 Forward Current Gain at VCE = 3 V, IC = 7 mA ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF TYP 4.5 1.4 7.0 MAX 2.5 10.0 80 145 1.0 1.0 0.7 1.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE856M03 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries resistance ohms NF 1.01 CJS 0 VAF 18 VJS 0.75 voltage volts IKF 1 MJS 0 current amps ISE 4.89e-9 FC 0.5 NE 4.37 TF 4e-12 BR 10.08 XTF 30 NR 1.0 VTF 0.69 VAR 8 ITF 0.06 IKR 0.03 PTF 0 ISC 3.32e-11 TR 1e-9 NC 3.95 EG 1.11 RE 0.33 XTB 0 RB 1.26 XTI 3 RBM 2 KF 1.56e-18 IRB 0.05 AF 1.49 RC 6.63 CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model ADDITIONAL PARAMETERS Parameters 856M03 CCB 0.087e-12 CCE 0.16e-12 LB 0.5e-9 LE 0.6e-9 CCBPKG 0.08e-12 CCEPKG 0.08e-12 LBX 0.12e-9 LCX 0.10e-9 LEX 0.12e-9 MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 10 V, IC = 0.5 mA to 10 mA Date: 11/98 NE856M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation mW 125 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 500 DC Forward Current Gain, hFE Collector Current, IC (mA) VCE = 10 V 80 60 40 20 300 200 100 70 50 30 20 10 2 0 4 6 8 10 12 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) NE856M03 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -80 IM3 IM2, IM3 (dB) -70 VCE = 10 V VO = 100 dBµV/50 Ω RG = RL = 50 Ω -60 IM2 -50 -40 IM2 f = 90 + 100 MHz IM3 f = 2 X 200-190 MHz -30 20 30 40 50 60 70 Collector Current, IC (mA) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 06/10/2002