PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 (SOT 23 STYLE) DESCRIPTION The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE97733 2SA1977 33 UNITS MIN TYP GHz 6.0 8.5 fT Gain Bandwidth Product at VCE = -8 V, IC = -20 mA NF Noise Figure at VCE = -8 V, IC = -3 mA dB Insertion Power Gain at VCE = -8 V, IC = -20 mA, f = 1 GHz dB |S21E|2 1.5 8.0 12.0 20 40 MAX 3.0 hFE Forward Current Gain Ratio at VCE = -8 V, IC = -20 mA ICBO Collector Cutoff Current at VCB = -10 V, IE = 0 µA -0.1 IEBO Emitter Cutoff Current at VBE = -1 V, IC = 0 µA -0.1 CRE2 Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz pF Total Power Dissipation mW PT 0.5 100 0.1 200 Notes: 1. Electronic Industrial Association of Japan. 2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE97733 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V -20 VCEO Collector to Emitter Voltage V -12 VEBO Emitter to Base Voltage V -3 IC Collector Current mA -50 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +200 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. DC CURRENT GAIN vs. COLLECTOR CURRENT 100 VCE = -8V DC Current Gain, HFE SYMBOLS 50 40 30 20 10 5 4 3 2 1 -0.1 -1.0 -10 -100 -1000 Collector Current, IC (mA) TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION GAIN vs. FREQUENCY DC POWER DERATING CURVES 35 FREE AIR Insertion Power Gain, |S21E|2 (dB) Total Power Dissipation, PT (mW) 400 300 200 NE97733 100 0 VCE = -8 V IC = -20 mA 30 25 20 15 10 5 0 -5 -10 -15 0 50 100 150 0.1 200 Ambient Temperature, TA (°C) 0.3 0.4 0.5 15 Insertion Power Gain, |S21E|2 (dB) 8 6 4 2 0 Collector Current, IC (mA) 3.0 VCE = -8 V f = 1 GHz VCE = -8 V -10 2.0 INSERTION GAIN vs. COLLECTOR CURRENT 10 -1 1.0 Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) 0.2 -100 10 5 0 -1 -10 Collector Current, IC (mA) 100 NE97733 TYPICAL PERFORMANCE CURVES (TA = 25°C) Collector Feed-back Capacitance, CRE (pF) DC CURRENT GAIN VS. COLLECTOR CURRENT DC Current Gain, HFE 100 50 40 30 VCE = -3 V VCE = -2 V VCE = -1 V 20 10 1.0 -0.1 -100 -10 -1.0 -1000 OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 1.5 f = 1 MHz 1 0.5 0 -10 -1 -100 Collector to Base Voltage, VCB (V) Collector Current, IC (mA) SWITCHING CHARACTERISTICS Parameter Symbol Vin = 1 V TYP Unit Turn-on Delay Time tON (delay) 1.08 ns Rise Time tr 0.66 ns Turn-off Delay Time tOFF (delay) 0.32 ns Fall Time tf 0.78 ns SWITCHING TIME MEASUREMENT CIRCUIT VCC (-) RC1 RC2 VIN VOUT tON (delay) RL1 VIN 20 ns RL2 tr 50 Ω RS Sampling Oscilloscope VBB (-) VOUT RE VEE (+) VIN = 1 v, VBB = -0.5 V, RC1 = RC2 RS (Ω) RC (Ω) RL1 (Ω) RL2 (Ω) RE (Ω) VEE (V) VCC (V) 160 1K 200 250 2.7 K 27 26.3 tf tOFF (delay) NE97733 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 90˚ 1 0.8 1.5 0.6 2 135˚ 0.4 45˚ S21 3 4 S12 5 0.2 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 20 50 10 20 -50 180˚ 0.1 0.2 0.3 0.4 0.5 0˚ -20 1.0 -10 S22 -5 -0.2 2.0 -4 S11 -3 97733 VCE = -8 V, IC = -3 mA -0.4 -2 -0.6 -1.5 -0.8 3.0 315˚ 225˚ 4.0 -1 270˚ VCE = -1 V, IC = -5 mA FREQUENCY (GHz) 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 S11 MAG 0.428 0.382 0.374 0.387 0.419 0.461 0.502 0.552 0.574 S21 ANG -126.3 -160.6 -175.9 155.1 132.6 114.5 100.2 82.6 74.2 MAG 4.899 3.398 2.813 2.002 1.583 1.323 1.148 0.948 0.859 S12 S22 K MAG1 ANG 100.7 82.8 74.1 56.8 42.6 30.6 21.0 7.0 -4.4 MAG 0.101 0.132 0.154 0.213 0.274 0.336 0.393 0.501 0.599 ANG 52.7 54.1 55.0 54.6 51.3 46.5 40.9 29.4 16.0 MAG 0.417 0.309 0.272 0.230 0.226 0.247 0.270 0.267 0.218 ANG -54.0 -60.2 -64.5 -80.1 -100.1 -119.0 -133.8 -159.3 155.9 0.77 0.97 1.04 1.09 1.07 1.04 1.01 0.98 0.98 (dB) 16.8 14.1 11.5 7.9 6.0 4.8 4.1 2.8 1.6 VCE = -5 V, IC = -10 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.251 0.213 0.207 0.225 0.265 0.316 0.365 0.428 0.462 -126.4 -159.9 -176.4 151.5 127.7 109.8 96.8 82.3 77.7 7.121 4.739 3.878 2.708 2.116 1.754 1.511 1.218 1.074 99.1 84.5 77.3 62.5 49.8 38.6 28.8 13.5 0.8 0.072 0.107 0.131 0.191 0.252 0.310 0.364 0.467 0.566 67.8 68.2 67.6 64.2 59.4 53.5 47.5 36.4 24.3 0.426 -38.9 0.350 -39.9 0.324 -41.9 0.288 -52.1 0.272 -67.9 0.275 -85.3 0.284 -100.1 0.269 -121.5 0.171 -148.4 0.91 1.00 1.03 1.04 1.03 1.00 0.98 0.95 0.94 19.9 16.0 13.7 10.3 8.2 7.2 6.2 4.2 2.8 -74.0 -111.0 -131.4 -174.7 151.1 125.4 106.9 85.0 74.6 4.205 3.520 3.075 2.293 1.824 1.516 1.301 1.038 0.930 119.4 97.8 87.0 67.2 51.9 39.0 28.4 13.9 3.7 0.088 0.109 0.122 0.157 0.202 0.256 0.314 0.438 0.573 54.6 51.8 52.6 56.0 57.8 56.7 53.7 44.7 32.3 0.673 -32.7 0.558 -38.2 0.512 -41.0 0.451 -49.9 0.427 -62.0 0.425 -76.0 0.433 -89.1 0.425 -110.2 0.328 -133.5 0.56 0.79 0.91 1.05 1.06 1.01 0.96 0.90 0.91 16.8 15.1 14.0 10.2 8.0 7.0 6.2 3.7 2.1 -140.9 -172.1 172.1 141.7 119.7 104.0 92.5 80.9 79.2 8.095 5.268 4.288 2.974 2.317 1.918 1.652 1.332 1.169 95.5 83.1 76.7 63.2 51.4 40.7 31.2 15.8 2.6 0.067 0.105 0.129 0.191 0.252 0.309 0.362 0.459 0.552 74.7 73.5 72.2 66.9 60.8 54.6 48.4 36.9 25.3 0.389 -34.1 0.334 -34.1 0.315 -36.1 0.285 -46.2 0.269 -61.6 0.268 -79.2 0.274 -94.3 0.257 -114.2 0.154 -134.6 0.98 1.02 1.03 1.03 1.02 1.00 0.98 0.95 0.94 20.8 16.2 14.1 10.9 8.9 7.9 6.6 4.6 3.3 VCE = -8 V, IC = -3 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.626 0.447 0.374 0.302 0.310 0.355 0.407 0.428 0.503 VCE = -8 V, IC = -20 mA 0.50 0.80 1.00 1.50 2.00 2.50 3.00 4.00 5.00 0.151 0.140 0.142 0.170 0.215 0.268 0.318 0.379 0.416 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE97733 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 (SOT-23) OUTLINE 33 RECOMMENDED P.C.B. LAYOUT +0.2 2.8 -0.3 2.4 2 2.9 ± 0.2 0.95 2 1.9 3 3 +0.10 0.4 -0.05 (ALL LEADS) 1.9 0.95 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1.1 to 1.4 0.8 0 to 0.1 1 1.0 +0.10 0.16 -0.06 ORDERING INFORMATION PART NUMBER NE97733-T1 QUANTITY PACKAGING 3000 Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE