PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz • HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz • LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2101M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS RF P1dB Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT MIN dBm TYP Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, dB 15 Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB 0.9 Ga Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT dB NF Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT dB 0.6 Ga Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT dB 19.0 Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 14.5 17.0 Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 11.5 13.5 GHz 14 |S21E| fT Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Cre Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 MHz pF ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA hFE DC Current Gain3 at VCE = 2 V, IC = 15 mA MAX 21 GL 2 DC UNITS NF MSG Notes: PARAMETERS AND CONDITIONS NESG2101M16 M16 11.0 1.2 13.0 17 0.4 0.5 100 100 130 190 260 1. MSG = S21 S12 2. Collector to base capacitance when the emitter pin is grounded. 3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. California Eastern Laboratories NESG2101M16 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 13.0 VCEO Collector to Emitter Voltage V 5.0 VEBO Emitter to Base Voltage V 1.5 Collector Current mA 100 PT2 Total Power Dissipation mW 190 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 IC OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M16 6-PIN LEAD-LESS MINIMOLD Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB. 1.0±0.05 3 0.15±0.05 6 Hz 5 4 2 0.4 0.8 0.4 1.2+0.07 -0.05 1 0.8+0.07 -0.05 ORDERING INFORMATION 10 K pcs reel SUPPLYING FORM Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape 0.125+0.1 -0.05 NESG2101M16-T3 QUANTITY 0.5±0.05 PART NUMBER PIN CONNECTIONS 4. Base 1. Collector 5. Emitter 2. Emitter 6. Emitter 3. Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 11/13/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd.