DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD5.6MG to NNCD6.8MG LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (QUARTO TYPE: COMMON ANODE) 5-PIN MINI MOLD PACKAGE DIMENSIONS This product series is a low capacitance type diode developed for Discharge) protection. Based on (in millimeters) the IEC61000-4-2 test on electromagnetic interference (EMI), the diode 2.8 ± 0.2 assures an endurance of no less than 30 kV, and capacitance is +0.1 1.5 small with 20 pF TYP. This product series is the most suitable for 0.65 −0.15 the ESD protection in the high-speed data communication bus such 0.95 1 1.9 5 2 0.95 With four elements mounted in the 5-PIN Mini Mold Package, that product can cope with high density assembling. 2.9 ± 0.2 as USB. +0.1 (Electrostatic 0.32 −0.06 E.S.D. FEATURES 3 4 • Based on the electrostatic discharge immunity test (IEC61000-4- • With 4 elements mounted (common anode) in the SC-74A +0.1 0.16 −0.06 0 to 0.1 is excellent in the frequency characteristic. 0.8 • Capacitance is small with 20 pF TYP. (at VR = 0 V, f = 1 MHz). It 1.1 to 1.4 2), the product assures the minimum endurance of 30 kV. package, that product can cope with high density assembling. (SC-74A) APPLICATIONS • External interface circuit E.S.D. protection in the high-speed data PIN CONNECTION communication bus such as USB. 5 MAXIMUM RATINGS (TA = 25°°C) Power Dissipation P 200 mW (Total) Surge Reverse Power PRSM 2 W (t = 10 µs 1 pulse) Fig.5 Junction Temperature Tj 150°C Storage Temperature Tstg −55°C to +150°C 4 1: 2: 3: 4: 5: 1 2 K1 A K2 K3 K4 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 3 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13910EJ2V0DS00 (2nd edition) Date Published February 2000 N CP(K) Printed in Japan © 1999 NNCD5.6MG to NNCD6.8MG ELECTRICAL CHARACTERISTICS (TA = 25°°C) (A-K1, A-K2, A-K3, A-K4) Note 1 Breakdown Voltage Type No. NNCD5.6MG 5.3 Note 2 Reverse Leakage IR (µA) Impedance ZZ (Ω) VBR (V) MIN. Dynamic MAX. IT (mA) MAX. IT (mA) MAX. 6.3 5 80 5 5 Capacitance Ct (pF) VR (V) TYP. 2.5 26 NNCD6.2MG 5.7 6.7 5 50 5 2 3.0 20 NNCD6.8MG 6.2 7.1 5 30 5 2 3.5 20 E.S.D Voltage (kV) TEST CONDITION TEST CONDITION MIN. 30 VR = 0 V f = 1 MHz 30 30 C = 150 pF R = 330 Ω (IEC61000-4-2) Note 1. Tested with pulse (40 ms) 2. ZZ is measured at IT give a small A.C. signal. TYPICAL CHARACTERISTICS (TA = 25°°C) Fig. 1 POWER DISSIPATION vs. Fig. 2 IT vs. VBR CHARACTERISTICS AMBIENT TEMPERATURE 200 30 x 30 x 1.6 P.C.B. (Glass Epoxy) 100 m 100 50 0 0 25 50 75 100 TA - Ambient Temperature - °C 125 NNCD6.2MG NNCD5.6MG 150 150 IT - On State Current - A P - Power Dissiipation - mW 250 NNCD6.8MG 10 m 1m 100 µ 10 µ 5 6 7 VBR - Breakdown Voltage - V 2 Data Sheet D13910EJ2V0DS00 8 NNCD5.6MG to NNCD6.8MG Fig. 3 Ct-VR CHARACTERISTICS 40 Ct - Capacitance between the terminal - pF f = 1 MHz 30 20 NNCD5.6MG NNCD6.2MG 10 NNCD6.8LG 0.1 1.0 10 VR - Reverse Voltage - V Zth - Transient Themal Impedance - °C/W Fig. 4 TRANSIENT THERMAL IMPEADANCE CHARACTERISTIC 5000 1000 625°C/W NNCD∗∗MG 100 10 5 1m P.C.B. (Glass Epoxy) (30 mm x 30 mm x 1.6 mm) 10 m 100 m 1 10 100 t - Time - s Fig. 5 SURGE REVERSE POWER RATINGS TA = 25°C Non Repetitive PRSM PRSM - Suge Reverse Power - W 50 10 tr NNCD∗∗MG 1 0.5 1µ 10 µ 100 µ 1m 10 m 100 m t - Time - s Data Sheet D13910EJ2V0DS00 3 NNCD5.6MG to NNCD6.8MG [MEMO] • The information in this document is subject to change without notice. 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