DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RH LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE) 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DIMENSION (Unit: mm) The NNCD6.8RH is a low capacitance type diode developed 2.1±0.1 1.25 for ESD (Electrostatic Discharge) absorption. Based on the IEC61000-4-2 test on electromagnetic interference (EMI), the the high-speed data communication bus such as USB. 2 5 +0.1 1 0.2 -0 This product series is the most suitable for ESD absorption in 0.65 2.0±0.2 capacitance is small with 10 pF between the terminal. 0.65 diode assures an endurance of no less then 8 kV, and 3 With four elements mounted in the 5-PIN super mini mold 4 +0.1 0 to 0.1 FEATURES 0.15 -0.05 assembling. 0.7 0.9±0.1 package, the product can cope with more high density • Base on the electrostatic discharge immunity test (IEC 61000-4-2), the product assures the minimum endurance of 8 kV. • Capacitance: 10 pF (at VR = 0 V, f = 1 MHz) between the terminal ELECTRODE CONNECTION The low capacitance can realize the excellent frequency characteristic. • With four elements in the mini mold package, the products can achieve 5 4 high density and automatic packaging. 1. K1: 2. A : 3. K2: 4. K3: 5. K4: APPLICATIONS • External interface circuit ESD absorption in the high-speed 1 data communication bus such as USB. 2 3 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 MAXIMUM RATINGS (TA = 25 °C) Item Symbol Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg Rating Unit 200 mW 2 (t = 10 µs 1 pulse) Remark Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15991EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. 2002 NNCD6.8RH ELECTRICAL CHARACTERISTICS (TA = 25°C (A to K1, A to K2, A to K3, A to K4) ) TYPE No. Breakdown Voltage Note1 Capacitance Reverse Ct (pF) Leakage VBR (V) MAX. IT (mA) TYP. Condition MAX. ESD Voltage Note2 (kV) impedance IR (µA) MIN. Note3 Dynamic Zz (Ω) VR (V) MAX. IT (mA) MIN. Condition C = 150 pF R = 330 Ω VR = 0 V NNCD6.8RH 6.2 7.1 5 2 10 f = 1 MHz 3.5 40 5 8 Contact discharge Notes 1. tested with pulse (40 ms) 2. Zz is measured at IT given a small A.C. signal. 3. Biased upon with IEC 61000-4-2 2 Data Sheet D15991EJ2V0DS NNCD6.8RH TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 2. IT - VBR CHARACTERISTICS Figure 1. POWER DISSIPATION vs. (A-K1, A-K2, A-K3, A-K4) 100 250 200 IT - On state Current (mA) P - Power Dissipation (mW) AMBIENT TEMPERATURE 150 100 50 0 0 25 50 75 100 125 150 10 1 0.1 TA - Ambient Temperature (°C) 0.01 6 6.5 7 VBR - Breakdown Voltage (V) Figure 3. ZZ - IT Dynamic Impedance ZZ (Ω) 1000 100 10 1 0.1 1 10 100 Ct - Capacitance between terminal (pF) Current IT (mA) Figure 4. Ct - VR CHARACTERISTICS 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VR - Reverse Voltage (V) Data Sheet D15991EJ2V0DS 3 5 NNCD6.8RH Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Zth - Transient Thermal Impedance (°C/W) 10000 1000 °C/W 1000 100 10 1 0.001 0.01 0.1 1 10 100 1000 Figure 6. SURGE REVERSE POWER RATINGS 100 TA = 25˚C Non - Repetitive 10 PRSM ★ PRSM - Surge Non - Reverse Power (W) Time t (s) tT 1 0.1 0.001 0.01 0.1 tT - Pulse Width (ms) 4 Data Sheet D15991EJ2V0DS 1 10 NNCD6.8RH [MEMO] Data Sheet D15991EJ2V0DS 5 NNCD6.8RH • The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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