DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RL 5-PIN SUPER SMALL MINI MOLD (FLAT LEAD TYPE) ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) DESCRIPTION PACKAGE DRAWING (Unit: mm) The NNCD6.8RL is a low capacitance type diode 1.6±0.1 1.2±0.1 developed for ESD (Electrostatic Discharge) absorption. interface circuit protection. 1 2 5 3 With four elements mounted in the 5-pin super mini mold 4 0.05 Max. 0.5 Max. FEATURES 0.13±0.05 (flat lead type) package, the product can cope with more high density assembling. 0.22±0.05 less than 8 kV, thus making itself most suitable for external 0.5 1.6±0.1 1.0±0.1 interference (EMI), the diode assures an endurance of no 0.5 Based on the IEC61000-4-2 test on electromagnetic • Based on the electrostatic discharge immunity test (IEC61000-4-2), the product assures the minimum ELECTRODE CONNECTION endurance of 8 kV. • With four elements mounted (common anode) Super small mini mold package, the product can achiever 5 4 high density and automatic packing. APPLICATIONS 1 • External interface circuit ESD absorption 2 3 1. K1: 2. A : 3. K2: 4. K3: 5. K4: Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 • Circuits for waveform clipper, surge absorber MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg RATING UNIT 200 mW 2 (t = 10 µs, 1 pulse) REMARK Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15992EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 NNCD6.8RL ELECTRICAL CHARACTERISTICS (TA = 25°C) (A - K1, A - K2, A - K3, A - K4) TYPE No. BREAKDOWN VOLTAGE Note1 CAPACITANCE REVERSE LEAKAGE Ct (pF) IR (µA) VBR (V) MIN. MAX. IT (mA) TYP. Condition MAX. ESD VOLTAGE Note2 (kV) VR (V) MIN. Condition C = 150 pF R = 330 Ω VR = 0 V NNCD6.8RL 6.2 7.1 5 2 10 f = 1 MHz 3.5 8 Contact discharge Notes 1. Tested with pulse (40 ms). 2. Based upon with IEC61000-4-2. 2 Data Sheet D15992EJ1V0DS NNCD6.8RL TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 2. IT vs. VBR CHARACTERISTICS (A - K1, A - K2, A - K3, A - K4) Figure 1. P vs. TA RATING 250 100000 10000 IT - On-state Current - mA P - Power Dissipation - mW 200 150 100 50 1000 100 10 1 0.1 0 0.01 0 25 50 75 100 125 150 5 TA - Ambient Temperature - °C 6 7 8 VBR - Breakdown Voltage - V Figure 3. Ct vs. VR CHARACTERISTICS Ct - Capacity between pins - pF 20 15 10 5 0 0.01 0.1 1 10 100 VR - Reverse Voltage - V Data Sheet D15992EJ1V0DS 3 NNCD6.8RL Figure 4. SURGE REVERSE POWER RATING 1000 PRSM - Surge Reverse Power - W PRSM Non-repetitive 100 tr 10 1 0.1 1µ 10 µ 100 µ 1 10 100 tr - Pulse Width - ms Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1000 Zth - Transient Thermal Impedance - °C/W 625˚C/W 100 10 When using ceramic board of 10 x 7.5 x 0.75 mm 1 100 µ 1m 10 m 100 m 1 Time - s 4 Data Sheet D15992EJ1V0DS 10 100 1000 NNCD6.8RL • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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