DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8PG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE) 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) The NNCD6.8PG is a diode developed for ESD (Electrostatic 2.8 ± 0.2 +0.1 1.5 0.65 −0.15 electromagnetic interference (EMI), the diode assures an 0.95 1.9 With four elements mounted in the 5-PIN mini mold package, 1 the product can cope with more high density assembling. 5 2 0.95 suitable for external interface circuit protection. 2.9 ± 0.2 endurance of no less than 30 kV, thus making itself most 3 4 +0.1 0.16 −0.06 0 to 0.1 • With four elements in the MINI MOLD package, the product can 0.8 the product assures the minimum endurance of 30 kV. 1.1 to 1.4 FEATURES • Base on the electrostatic discharge immunity test (IEC 61000-4-2), +0.1 Discharge) absorption. Based on the IEC-61000-4-2 test on 0.32 −0.06 DESCRIPTION achieve high density and automatic packaging. ELECTRODE CONNECTION APPLICATIONS 5 4 • External interface circuit ESD absorption 1: 2: 3: 4: 5: • Circuits for waveform clipper, surge absorber 1 2 K1 A K2 K3 K4 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 3 MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg RATING UNIT 200 mW 85 (t = 10 µs 1 pulse) REMARK Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15987EJ2V0DS00 (2nd edition) Data Published September 2002 NS CP(K) Printed in Japan The mark ★ shows major revised points. 2002 NNCD6.8PG ELECTRICAL CHARACTERISTICS (TA = 25°C) (A to K1, A to K2, A to K3, A to K4) TYPE No. BREAKDOWN VOLTAGE CAPACITANCE Note1 LEAKAGE VBR (V) MIN. MAX. REVERSE TYP. Condition IMPEDANCE IR (µA) Ct (pF) IT (mA) DYNAMIC MAX. Note2 ESD VOLTAGE Zz (Ω) VR (V) MAX. Note3 (kV) IT (mA) MIN. Condition C = 150 pF R = 330 Ω VR = 0 V NNCD6.8PG 6.2 7.1 5 2 90 f = 1 MHz 3.5 40 5 30 Contact discharge Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT given a small A.C. signal. 3. Based upon with IEC 61000-4-2 2 Data Sheet D15987EJ2V0DS NNCD6.8PG TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 2. IT - VBR CHARACTERISTICS ★ (A-K1, A-K2, A-K3, A-K4) Figure 1. POWER DISSIPATION vs. 1000 100 200 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C IT - On-state Current - mA 10 150 1 0.1 0.01 0.001 0.0001 0.00001 2 3 4 5 6 7 8 9 VBR - Breakdown Voltage - V Figure 3. ZZ - IT ZZ - Dynamic Impedance - Ω 1000 100 10 1 0.1 1 10 100 IT - Current - mA between Terminal - pF Figure 4. Ct - VR CHARACTERISTICS Ct - Capacitance P - Power Dissipation - mW AMBIENT TEMPERATURE 250 120 100 80 60 NNCD6.8PG 40 20 0 0 1 2 3 4 5 6 VR - Reverse Voltage - V Data Sheet D15987EJ2V0DS 3 10 NNCD6.8PG Zth - Transient Thermal Impedance - °C/W Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10000 1000°C/W 1000 100 10 1 0.001 0.01 0.1 1 10 100 1000 t - Time - s Figure 6. SURGE REVERSE POWER RATINGS ★ TA = 25°C Non-repetitive PRSM PRSM - Surge Reverse Power - W 1000 100 tT 10 1 0.001 0.01 0.1 tT - Pulse Width - ms 4 Data Sheet D15987EJ2V0DS 1 10 NNCD6.8PG [MEMO] Data Sheet D15987EJ2V0DS 5 NNCD6.8PG • The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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