DATA SHEET SURGE ABSORBER DEVICES NSAD500H ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES QUAD TYPE: COMMON ANODE SC-88A PACKAGE PACKAGE DRAWING (Unit: mm) DESCRIPTION This product series is a low capacity for ESD surge absorber 2.1 ± 0.1 devices. Use by 100 to 500 Mbps class data line (USB2.0, 1.25 IEEE1394, 100B, etc.). Based on the IEC 61000-4-2 test on electromagnetic interference protection. 0.2 −0 +0.1 5 2 0.65 2.0 ± 0.2 making itself most suitable for external high signal interface circuit 1 0.65 (EMI), the devices assures an endurance of no less than 8 kV, thus FEATURES 3 • Base on the electrostatic discharge immunity test (IEC 61000-4-2) 4 +0.1 0 to 0.1 0.7 0.9 ± 0.1 It’s an extraordinarily small capacitance. • With 4 elements mounted (common anode). 0.16 −0.05 product assures the minimum endurance of 8 kV. • Capacitance: 3.5 pF TYP. Mounted in the SC-88A package, the products can achiever high density and automatic packaging. APPLICATIONS ELECTRODE CONNECTION • USB2.0, IEEE1394, 100B external interface circuit ESD protection. 5 4 1. K1: Cathode1 2. A: Anode (common) 3. K2: Cathode2 4. K3: Cathode3 5. K4: Cathode4 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg RATING UNIT 200 mW 2 (t = 10 µs, 1 pulse) REMARK Total W 150 o C −55 to +150 o C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16235EJ1V1DS00 (1st edition) Date Published May 2003 NS CP(K) Printed in Japan 2003 NSAD500H ELECTRICAL CHARACTERISTICS (TA = 25°C) (A to K1, A to K2, A to K3, A to K4) BREAK OVER CAPACITANCE REVERSE VOLTAGE Ct (pF) CURRENT PARAMETER Note (kV) IR (µA) VBO (V) MIN. ESD TYP. TYP. Condition MAX. <REFERENCE> FORWARD BREAK OVER VF (V) MIN. Condition VOLTAGE C = 150 pF R = 330 Ω VR = 0 V NSAD500H 5.3 8 0.1 3.5 f = 1 MHz 3.0 8 Contact discharge Note Based upon with IEC 61000-4-2. 2 Data Sheet D16235EJ1V1DS 10 V TYP. NSAD500H TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 1. I vs. VBO CHARACTERISTICS 250 200 150 I - Current - mA 100 VBO side 50 0 -15 -10 -5 -50 0 5 10 15 VF side -100 -150 -200 -250 VBO - Break Over Voltage - V Figure 2. Ct vs. V CHARACTERISTICS 5 f = 1 MHz 4.5 4 Ct - Capacitance - pF 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 V - Voltage - V Data Sheet D16235EJ1V1DS 3 NSAD500H Figure 3. It vs. V CHARACTERISTICS 20 15 It - Reverse Current - nA 10 5 −8 −6 −4 −2 0 0 −5 −10 −15 −20 V - Voltage - V 4 Data Sheet D16235EJ1V1DS 2 4 6 8 NSAD500H • The information in this document is current as of May, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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