DATA SHEET PHOTOCOUPLER PS2561-1,-2, PS2561L-1,-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (t r = 3 µs TYP., tf = 5 µs TYP.) • UL approved (File No. E72422 (S) ) • CSA approved (No. CA 101391) • BSI approved (BS415, BS7002) No. 7112 • SEMKO approved (SS4410165) No. 9317144 • NEMKO approved (NEK-HD 195S6) No. A21409 • DEMKO approved (Section 101, 137) No. 300535 • FIMKO approved (E69-89) No. 167265-08 • VDE0884 approved (Option) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P12989EJ4V0DS00 (4th edition) (Previous No. LC-2225) Date Published August 1997 NS Printed in Japan The mark shows major revised points. © 1992 PS2561-1,-2,PS2561L-1,-2 PACKAGE DIMENSIONS (in millimeters) DIP Type PS2561-1 PS2561-1 (New Package) 4 3 4 3 5.1 MAX. 4.6 ± 0.35 1 2 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 6.5 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 1.25±0.15 0.50 ± 0.10 0.25 M 4.55 MAX. 3.8 MAX. 2.8 MIN. 0.65 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 1.25±0.15 0 to 15˚ 2.54 0.50 ± 0.10 0.25 M 2.54 PS2561-2 PS2561L1-1 4 3 8 7 6 5 5.1 MAX. 10.2 MAX. 1 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 6.5 6.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 10.16 7.62 0.50 ± 0.10 0.25 M Caution New package 1ch only 2 4.55 MAX. 3.8 MAX. 0.65 3.8 MAX. 0.35 2.54 0 to 15˚ 2.8 MIN. 4.25 MAX. 2.8 MIN. 7.62 1.25±0.15 0 to 15˚ 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 0 to 15˚ PS2561-1,-2,PS2561L-1,-2 Lead Bending Type PS2561L-1 (New Package) PS2561L-1 4 3 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 0.90 ± 0.25 1.25±0.15 0.25 M 7.62 3.8 MAX. 3.8 MAX. 7.62 6.5 1 2 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2561L-2 PS2561L2-1 4 3 8 7 6 5 5.1 MAX. 10.2 MAX. 1 2 3 4 1 2 0.9 ± 0.25 1.25±0.15 0.25 M 10.16 12.0 MAX. 7.62 0.05 to 0.2 6.5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. Anode 2. Cathode 3. Emitter 4. Collector 2.54 0.05 to 0.2 5.1 MAX. 0.05 to 0.2 6.5 4.6 ± 0.35 0.90 ± 0.25 9.60 ± 0.4 1.25±0.15 0.25 M 2.54 Caution New package 1ch only 3 PS2561-1,-2,PS2561L-1,-2 ORDERING INFORMATION Part Number Package Safety Standard Approval PS2561-1 PS2561L-1 PS2561L1-1 PS2561L2-1 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2561-2 PS2561L-2 8-pin DIP 8-pin DIP (lead bending surface mount) PS2561-1-V PS2561L-1-V PS2561L1-1-V PS2561L2-1-V 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) PS2561-2-V PS2561L-2-V 8-pin DIP 8-pin DIP (lead bending surface mount) Standard products • UL approved • BSI approved • DEMKO approved • FIMKO approved PS2561-1 • CSA approved • NEMKO approved • SEMKO approved PS2561-2 VDE0884 approved products (Option) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Symbol Ratings PS2561-1, PS2561L-1 Diode PS2561-2, PS2561L-2 VR 6 V Forward Current (DC) IF 80 mA Power Dissipation *1 Peak Forward Current Transistor Unit Reverse Voltage Power Dissipation Derating ∆PD/°C 1.5 1.2 mW/°C PD 150 120 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 5 000 *3 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output *3 VDE0884 approved products (Option) 4 PS2561-1 PS2561-2 *1 As applying to Safety Standard, following part number should be used. Parameter Application part *1 number PS2561-1,-2,PS2561L-1,-2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz ICEO VCE = 80 V, IF = 0 mA CTR IF = 5 mA, VCE = 5 V Collector Saturation Voltage VCE (sat) IF = 10 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kV Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current Coupled Current Transfer Ratio *1 Rise Time Fall Time *2 *2 tr : 200 to 400 (%) M : 80 to 240 (%) D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) MIN. TYP. MAX. Unit 1.17 1.4 V 5 µA 50 80 200 pF 100 nA 400 % 0.3 V Ω 11 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω tf *1 CTR rank (only PS2561-1, PS2561L-1) L Conditions 0.5 pF 3 µs 5 *2 Test circuit for switching time Pulse Input VCC PW = 100 µ s Duty Cycle = 1/10 IF 50 Ω VOUT RL = 100 Ω 5 PS2561-1,-2,PS2561L-1,-2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 PS2561-1 PS2561L-1 100 PS2561-2 PS2561L-2 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 1.5 mW/˚C 50 1.2 mW/˚C 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE TA = +100 ˚C +60 ˚C +25 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) PS2561-2 PS2561L-2 70 50 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) PS2561-1 PS2561L-1 100 0 150 100 100 10 1 – 50 –25 0 25 50 Ambient Temperature TA (˚C) 6 150 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) 1.0 PS2561-1,-2,PS2561L-1,-2 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 450 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 400 350 300 250 200 150 100 50 0 100 0.05 0.1 1 5 10 50 Forward Current IF (mA) Ambient Temperature TA (˚C) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 1 000 IC = 2 mA, VCC = 10 V, CTR = 290 % 10 td ts 1 tf IF = 5 mA, VCC = 5 V, CTR = 290 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) 0.5 ts 100 10 tr 0.1 10 50 100 1 100 5 k 10 k 500 1 k FREQUENCY RESPONSE 50 k 100 k LONG TIME CTR DEGRADATION –5 100 Ω –15 RL = 1 kΩ TYP. 1.0 CTR (Relative Value) Normalized Gain GV 5 k 10 k 1.2 IF = 5 mA, VCE = 5 V –10 500 1 k Load Resistance RL (Ω) Load Resistance RL (Ω) 0 td 0.8 IF = 5 mA TA = 25 ˚C 0.6 IF = 5 mA TA = 60 ˚C 0.4 0.2 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) 0 102 103 104 105 Time (Hr) 7 PS2561-1,-2,PS2561L-1,-2 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Taping Direction PS2561L-1-E3 PS2561L-1-F3 PS2561L-1-E4 PS2561L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2561L-1-E3, E4: φ 250 PS2561L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2561L-1-E3, E4 1 000 pcs/reel PS2561L-1-F3, F4 2 000 pcs/reel 8 PS2561-1,-2,PS2561L-1,-2 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Taping Direction PS2561L-2-E3 PS2561L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2561-1,-2,PS2561L-1,-2 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2561-1,-2,PS2561L-1,-2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Speck 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 7.0 mm Creepage distance > 7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 175 400 700 °C mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 12 9 Ω 11 PS2561-1,-2,PS2561L-1,-2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5