DATA SHEET PHOTOCOUPLER PS2571-1,-4, PS2571L-1,-4 HIGH ISOLATION VOLTAGE SAFETY STANDARD TYPE MULTI PHOTOCOUPLER SERIES −NEPOC TM Series− DESCRIPTION The PS2571-1, -4 and PS2571L-1, -4 are optically coupled isolators containing GaAs light emitting diodes and NPN silicon phototransistors. The PS2571-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2571L-1, -4 are lead bending type (Gullwing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product : PS2571L-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • BSI approved: No. 8343/8344 • CSA approved: No. CA 101391 • NEMKO approved: No. P98102650 • DEMKO approved: No. 308152 • SEMKO approved: No. 9832161/01 • FIMKO approved: No. F1 11899 • VDE0884 approved (Option) APPLICATIONS • Power supply • Telephone, FAX • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13857EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 PS2571-1,-4,PS2571L-1,-4 PACKAGE DIMENSIONS (in millimeters) DIP type PS2571-4 PS2571-1 TOP VIEW 4.6±0.5 TOP VIEW 19.8±0.5 6.5 +0.7 –0.5 6.5 +0.7 –0.5 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 0 to 15˚ +0.1 0.25 –0.05 3.5±0.3 7.62 3.3±0.5 4.15±0.4 3.5±0.3 3.3±0.5 4.15±0.4 7.62 1.25±0.15 0 to 15˚ 0.25 +0.1 –0.05 1.25±0.15 0.50±0.10 0.25 M 16151413 121110 9 2.54 0.50±0.10 0.25 M 2.54 PS2571-1 PS2571-4 TOP VIEW 4.6±0.35 TOP VIEW 19.8±0.5 6.5 +0.7 –0.5 6.5 +0.7 –0.5 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 0 to 15˚ 0.25 +0.1 –0.05 0.50±0.10 0.25 M 3.5±0.3 7.62 3.2±0.4 4.15±0.4 3.5±0.3 3.2±0.4 4.15±0.4 7.62 1.25±0.15 1.25±0.15 0 to 15˚ 0.25 +0.1 –0.05 2.54 2.54 2 16151413 121110 9 Data Sheet P13857EJ2V0DS00 0.50±0.10 0.25 M PS2571-1,-4,PS2571L-1,-4 Lead bending type PS2571L-1 PS2571L-4 TOP VIEW 6.5 +0.7 –0.5 0.25 +0.1 –0.05 0.05 to 0.2 0.25 +0.1 –0.05 0.25 M 9.60±0.4 0.9±0.25 2.54 PS2571L-4 TOP VIEW 4.6±0.35 6.5 +0.7 –0.5 9.60±0.4 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 0.25 +0.1 –0.05 0.05 to 0.2 0.25 +0.1 –0.05 2.54 16151413 121110 9 3.5±0.3 6.5 +0.7 –0.5 0.9±0.25 TOP VIEW 19.8±0.5 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 3.5±0.3 9.60±0.4 0.15 PS2571L-1 1.25±0.15 0.25 M 0.15 0.05 to 0.2 3.5±0.3 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 1.25±0.15 0.9±0.25 1.25±0.15 0.25 M 16151413 121110 9 3.5±0.3 6.5 +0.7 –0.5 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 2.54 TOP VIEW 19.8±0.5 4 3 0.05 to 0.2 4.6±0.5 1.25±0.15 0.25 M 0.9±0.25 2.54 0.15 9.60±0.4 0.15 Data Sheet P13857EJ2V0DS00 3 PS2571-1,-4,PS2571L-1,-4 Lead bending type for long distance PS2571L1-1 PS2571L2-1 4.6±0.5 TOP VIEW 4.6±0.5 TOP VIEW 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector +0.7 4 3 6.5 –0.5 6.5 –0.5 +0.7 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 10.16 0 to 15˚ 1.25±0.15 1.25±0.15 0.25 M 0.25 +0.1 –0.05 0.9±0.25 11.8 +0.2 –0.5 2.54 0.25 0.50±0.10 0.25 M PS2571L1-1 PS2571L2-1 4.6±0.35 TOP VIEW TOP VIEW 4 3 4 3 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 +0.7 –0.5 6.5 +0.7 –0.5 4.6±0.35 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 10.16 0 to 15˚ 1.25±0.15 0.25 M 0.25 +0.1 –0.05 0.9±0.25 11.8 +0.2 –0.5 2.54 0.25 1.25±0.15 0.50±0.10 0.25 M 2.54 4 0.25 +0.1 –0.05 3.5±0.3 3.5±0.3 3.15±0.35 3.85±0.4 10.16 Data Sheet P13857EJ2V0DS00 0.25±0.2 2.54 0.25±0.2 0.25 +0.1 –0.05 3.5±0.3 3.5±0.3 3.15±0.35 3.85±0.4 10.16 PS2571-1,-4,PS2571L-1,-4 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 4 mm Isolation Thickness 0.4 mm ORDERING INFORMATION Part Number PS2571-1 Package 4-pin DIP Packing Style Magazine case 100 pcs PS2571L-1 Safety Standard Approval Standard products Application Part *1 Number PS2571-1 (UL, CSA, BSI, PS2571L-1-E3 Embossed Tape 1 000 pcs/reel PS2571L-1-E4 NEMKO, SEMKO, DEMKO, FIMKO PS2571L-1-F3 Embossed Tape 2 000 pcs/reel approved) PS2571L-1-F4 PS2571-4 16-pin DIP Magazine case 20 pcs 4-pin DIP Magazine case 100 pcs PS2571-4 PS2571L-4 PS2571-1-V PS2571L-1-V VDE0884 approved PS2571-1 products (Option) PS2571L-1-V-E3 Embossed Tape 1 000 pcs/reel PS2571L-1-V-E4 PS2571L-1-V-F3 Embossed Tape 2 000 pcs/reel PS2571L-1-V-F4 PS2571-4-V 16-pin DIP Magazine case 20 pcs PS2571-4 PS2571L-4-V *1 For the application of the Safety Standard, following part number should be used. Data Sheet P13857EJ2V0DS00 5 PS2571-1,-4,PS2571L-1,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2571-1, PS2571L-1 Diode PS2571-4, PS2571L-4 Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V Power Dissipation Derating Power Dissipation Peak Forward Current Transistor Unit *1 ∆PD/°C 0.7 0.55 mW/°C PD 70 55 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 5 V IC 40 mA/ch Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 6 Data Sheet P13857EJ2V0DS00 PS2571-1,-4,PS2571L-1,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 40 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V VCE (sat) IF = 10 mA, IC = 2 mA Collector Saturation Voltage RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz Rise Time Fall Time *2 tr MAX. Unit 1.2 1.4 V 5 µA 50 80 200 VCC = 10 V, IC = 2 mA, RL = 100 Ω pF 100 nA 400 % 0.3 V Ω 10 tf *1 CTR rank (PS2571-1,PS2571L-1 only) TYP. 11 Isolation Resistance *2 MIN. 0.5 pF 3 µs 5 *2 Test Circuit for Switching Time D : 100 to 300 % Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 In monitor 50 Ω Data Sheet P13857EJ2V0DS00 VOUT RL = 100 Ω 7 PS2571-1,-4,PS2571L-1,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 75 PS2571-1 PS2571L-1 50 0.7 mW/˚C PS2571-4 PS2571L-4 25 0.55 mW/˚C 0 25 50 75 125 100 1.5 mW/˚C 50 1.2 mW/˚C 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 50 Collector Current IC (mA) Forward Current IF (mA) TA = +100 ˚C +60 ˚C +25 ˚C 1 0 ˚C –25 ˚C –50 ˚C 0.1 40 50 30 mA 20 mA 10 mA 20 5 mA 10 IF = 1 mA 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 100 1 000 100 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) PS2571-4 PS2571L-4 Ambient Temperature TA (˚C) 0.01 0.0 VCE = 40 V 25 V 10 V 5V 10 1 0.1 –50 –25 0 25 50 75 100 50 mA 20 mA 10 mA 5 mA 10 2 mA IF = 1 mA 1 0.1 0.0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) Ambient Temperature TA (˚C) 8 PS2571-1 PS2571L-1 100 150 100 10 150 Data Sheet P13857EJ2V0DS00 1.0 PS2571-1,-4,PS2571L-1,-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0.0 –50 –25 0 25 50 75 200 150 100 50 0.1 1 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 1 000 IC = 2 mA, VCC = 10 V, CTR = 220 % IF = 5 mA, VCC = 5 V, CTR = 220 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) VCE = 5 V 250 0 0.01 100 100 10 td ts 1 0.1 10 100 tf 100 ts 10 tr td 1 0.1 10 10 k 1k 100 1k 10 k 100 k Load Resistance RL (Ω) Load Resistance RL (Ω) FREQUENCY RESPONSE LONG TERM CTR DEGRADATION 1.2 IC = 1 mA, VCC = 5 V 0 Normalized Gain GV Current Transfer Ratio CTR (%) 300 –5 –10 100 Ω –15 RL = 1 kΩ IF = 5 mA (TYP.) 1.0 CTR (Relative Value) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 0.8 TA = 25 ˚C 0.6 TA = 60 ˚C 0.4 0.2 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 0 Frequency f (kHz) 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet P13857EJ2V0DS00 9 PS2571-1,-4,PS2571L-1,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2571L-1-E3 PS2571L-1-E4 Outline and Dimensions (Reel) 1.6 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 250 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 10 Data Sheet P13857EJ2V0DS00 PS2571-1,-4,PS2571L-1,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2571L-1-F3 PS2571L-1-F4 Outline and Dimensions (Reel) 1.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 2 000 pcs/reel Data Sheet P13857EJ2V0DS00 11 PS2571-1,-4,PS2571L-1,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 12 Data Sheet P13857EJ2V0DS00 PS2571-1,-4,PS2571L-1,-4 [MEMO] Data Sheet P13857EJ2V0DS00 13 PS2571-1,-4,PS2571L-1,-4 [MEMO] 14 Data Sheet P13857EJ2V0DS00 PS2571-1,-4,PS2571L-1,-4 [MEMO] Data Sheet P13857EJ2V0DS00 15 PS2571-1,-4,PS2571L-1,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8