DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. 4.0 26.8 MAX. 2.5 • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. 10 MIN. 10 FEATURES ORDERING INFORMATION 1.4 0.5 ±0.2 2.54 1.4 Part Number Package Quality Grade µPA1428AH 10 Pin SIP Standard 0.6 ±0.2 1 2 3 4 5 6 7 8 910 Please refer to “Quality grade on NEC Semiconductor CONNECTION DIAGRAM Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on 3 5 7 9 the devices and its recommended applications. 2 4 6 8 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) VCBO 60 ±10 V Collector to Emitter Voltage VCEO 60 ±10 V Collector to Base Voltage Emitter to Base Voltage VEBO 8 V Surge Sustaining Energy ECEO(sus) 30 mJ/unit Collector Current (DC) IC(DC) ±2 A/unit Collector Current (pulse) IC(pulse)* ±3 A/unit Base Current (DC) IB(DC) 0.2 A/unit Total Power Dissipation PT1** 3.5 W Total Power Dissipation PT2*** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 350 µs, Duty Cycle ≤ 2 % ** 4 Circuits, Ta = 25 ˚C *** 4 Cuircuits, Tc = 25 ˚C 1 10 (C) (B) R1 R2 (E) PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 10 kΩ R1 = .. 900 Ω R2 = The information in this document is subject to change without notice. Document No. IC-3479 (O.D. No. IC-8359) Date Published September 1994 P Printed in Japan © 1994 µPA1428A ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) MAX. UNIT Collector Leakage Current CHARACTERISTIC SYMBOL ICBO MIN. TYP. 1 µA VCB = 40 V, IE = 0 Emitter Leakage Current IEBO 5 mA VEB = 5 V, IC = 0 Collector to Emitter Sustaining Voltage VCEO(sus) 70 V IC = 1 A, L = 1 mH DC Current Gain hFE1 * 2000 20000 — VCE = 2 V, IC = 1 A DC Current Gain hFE2 * 500 — VCE = 2 V, IC = 2 A Collector Saturation Voltage VCE(sat) * 1.0 1.5 V IC = 1 A, IB = 1 mA Base Saturation Voltage VBE(sat) * 1.7 2 V IC = 1 A, IB = 1 mA Turn On Time ton 0.4 µs Storage Time tstg 1.5 µs Fall Time tf 0.4 µs IC = 1 A IB1 = –IB2 = 2 mA VCC =.. 50 V, R L = 50 Ω See test circuit 50 60 TEST CONDITIONS * PW ≤ 350 µ s, Duty Cycle ≤ 2 %/pulsed SWITCHING TIME TEST CIRCUIT RL = 50 Ω Base Current Wave Form IC VIN IB1 IB1 IB2 IB2 TUT VCC = 50 V 90 % PW PW = 50 µs Duty Cycle ≤ 2 % 2 VBB = –5 V Collector Current Wave Form ton IC 10 % tstg tf µPA1428A TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA SAFE OPERATING AREA 5 100 = 20 d n tio 0.5 m Li d ite 0 50 100 0.1 150 70 b S/ d ite m Li 0.2 20 50 s m a ip 40 1 s ite VCEO TYP. im s 1m bL 60 D Limissip ite atio d n 10 IC - Collector Curreut - A S/ 0 s µ 80 10 µ 0 2 ss Di dT - Percentage of Rated Current - % PW 3 TC = 25 ˚C Single Pulse 5 10 20 100 VCE - Collector to Emitter Voltage - V TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 4 Circuits Operation 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 1 0 25 50 75 100 125 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC µ PA1428A 3 Circuits Operation 20 1 Circuit Operation 10 0 150 Ta - Ambient Temperature - ˚C DC CURRENT GAIN vs. COLLECTOR CURRENT 75 100 10000 5 a T = 12 ˚C ˚C C 75 5 ˚ 5 ˚C 2 –2 100 m 1 IC - Collector Current - A 125 150 TRANSIENT THERMAL RESISTANCE 10 Rth(j-c) - Transient Thermal Resistance - ˚C/W hFE - DC Current Gain 50 50 VCE = 2.0 V Pulsed 100 10 m 25 TC - Case Temperature - ˚C 100000 1000 2 Circuits Operation VCE ≤ 10 V 10 5 1 0.5 0.1 0.1 1 10 100 PW - Pulse Width - ms 3 µPA1428A COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 IC /IB = 1000 Pulsed 1 0.1 0.1 VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V 10 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 1 0.1 0.1 10 IC /IB = 1000 Pulsed Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 10 IC - Collector Current - A IC - Collector Current - A SWITCHING TIME vs. COLLECTOR CURRENT DUMPER DIODE CHARACTERISTICS 10 100 tstg 1 tf ton 0.1 0.1 10 1 100 m 10 m 1 IC - Collector Current - A 4 IF(E-C) - Dumper Diode Forward Current - A ton, tstg, tf - Switching Time - µ s IC /IB = 500 10 0 1.0 1 3.0 VF(E-C) - Dumper Diode Voltage - V 4.0 µPA1428A REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 5 µPA1428A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6