DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters driver. 4.0 26.8 MAX. • 4 V driving is possible 2.5 • Large Current and Low On-state Resistance 10 MIN. 10 FEATURES ID (DC) = ±2.0 A RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A) 1.4 0.5±0.1 2.54 RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A) 1.4 0.6±0.1 • Low Input Capacitance Ciss = 220 pF TYP. 1 2 3 4 5 6 7 8 9 10 ORDERING INFORMATION Type Number µPA1520BH CONNECTION DIAGRAM Package 10 Pin SIP 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2 Drain to Source Voltage VDSSNote 1 30 V Gate to Source Voltage VGSSNote 2 ±20 V Drain Current (DC) ID(DC) ±2.0 A/unit Drain Current (pulse) ID(pulse)Note 3 ±8.0 A/unit Total Power Dissipation PT1Note 4 28 W Total Power Dissipation PT2Note 5 3.5 W Channel Temperature TCH 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. VGS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 5 4 7 6 9 8 1 10 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source 2. VDS = 0 4. 4 circuits, TC = 25 °C 3. 4 circuits, TA = 25 °C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G10598EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan © 1995 µPA1520B ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL TEST CONDITIONS TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Gate Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V Forward Transfer Admittance | Yfs | VDS = 10 V, ID = 1.0 A 1.0 Drain to Source On-State Resistance RDS(on)1 VGS = 10 V, ID = 1.0 A 0.10 0.17 Ω RDS(on)2 VGS = 4.0 V, ID = 1.0 A 0.13 0.25 Ω Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1.0 MHz 220 pF Output Capacitance Coss 220 pF Reverse Transfer Capacitance Crss 90 pF 27 ns 125 ns . 15 V, = . S Turn-on Delay Time td(on) ID = 1.0 A, VGS = 10 V, VDD Rise Time tr RL = 15 Ω Turn-off Delay Time td(off) 590 ns Fall Time tr 500 ns Total Gate Charge QG 14 nC Gate to Source Charge QGS 2 nC Gate to Drain Charge QGD 5.5 nC Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 1.0 V Reverse Recovery Time trr IF = 2.0 A, VGS = 0, di/dt = 50 A/µs 640 ns Reverse Recovery Charge Qrr 3.4 µC Test Circuit 1 VGS = 10 V, ID = 2.0 A, VDD = 24 V Switching Time D.U.T. VGS RL VGS RG RG = 10 Ω PG. Wave Form 0 VGS (on) 10 % 90 % VDD 90 % ID 90 % ID VGS ID Wave Form 0 0 t = 1 µs Duty Cycle ≤ 1 % Test Circuit 2 10 % tr ton Gate Charge D.U.T. IG = 2 mA PG. 10 % td (on) t 2 MIN. 50 Ω RL VDD td (off) tf toff µPA1520B CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 4 PT - Total Power Dissipation - W Laed Print Circuit Boad 5 ,,, ,, , PT - Total Power Dissipation - W µ PA1520BH 30 Under same dissipation in each circuit NEC 4 Circuits operation 3 Circuits operation 2 Circuits operation 1 Circuit operation 3 2 1 0 50 100 150 Under same dissipation in each circuit 4 Circuits operation 3 Circuits operation 20 2 Circuits operation 1 Circuit operation 10 TC is grease Temperature on back surface 0 50 100 150 TA - Ambient Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA ID(Pulse) V) s m s s m ID(DC) 10 Lim m ite n) S(o 1 G d (V RD dT - Percentage of Rated Power - % 10 = S= PW 10 50 0 10 1 s m ID - Drain Current - A 100 DC TC = 25 °C Single Pulse 0.1 0.1 1 10 100 80 60 40 20 0 100 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 Pulsed VDS = 10 V ID - Drain Current - A 8 ID - Drain Current - A 40 VDS - Drain to Source Voltage - V 100 10 TA = 125 °C 75 °C 25 °C -25 °C 1.0 Pulsed VGS = 20 V 10 V VGS = 4 V 6 4 2 0.1 0 20 2 4 VGS- Gate to Source Voltage - V 6 0 0.5 1.0 1.5 2.0 VDS - Drain to Source Voltage - V 3 µPA1520B TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1 000 Single Pulse. For each Circuit Rth(CH-A) 4Circuits 3Circuits 2Circuits 1Circuit 100 Rth(CH-C) 10 1.0 0.1 100µ 1m 10 m 100 m 1 10 100 1 000 100 10 VDS = 10 V Pulsed TA = -25 °C 25 °C 75 °C 125 °C 1.0 0.1 0.1 10 1.0 RDS(on) - Drain to Source On-State Resistance - mΩ ID- Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 Pulsed 100 0 200 VGS = 4 V 100 0 VGS = 10 V 1.0 ID - Drain Current - A 20 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 300 ID = 0.4 A 1A 2A 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VGS(off) - Gate to Source Cutoff Voltage - V yfs - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - sec VDS = 10 V ID = 1 mA 2 1 0 - 50 0 50 100 TCH - Channel Temperature - °C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 200 VGS = 4 V 150 VGS =10 V 100 50 ISD - Diode Forward Current - A ID = 1 A 0 - 50 0 100 50 10 VGS = 10 V 1.0 VGS = 0 0.1 0.01 150 0 SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Coss Ciss Crss 100 10 0.1 1 10 1 000 td(on), tr, td(off), tf - Switching Time - ns 1 000 100 td(off) tf tr 100 10 0.01 0.1 10 D = 6 15 V V 24 V 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 12 ID = 2 A VGS 10 20 10 1.0 ID - Drain Current - A 10 6 4 2 VDS 0 0.1 8 VD di/dt = 50 A/µ s VGS = 0 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns 1.0 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 0.01 VDD 15 V VGS = 10 V RG =10 Ω td(on) VDS - Drain to Source Voltage - V 10 000 1.5 1.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 0.5 TCH - Channel Temperature - °C 0 2 6 10 0 14 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ µPA1520B Qg - Gate Charge - nC 5 µPA1520B REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Semiconductor device package manual IEI-1213 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134 Power MOS FET features and application switching power supply TEA-1034 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 µPA1520B [MEMO] 7 µPA1520B [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8