DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. 4.0 2.5 10 MIN. 10 26.8 MAX. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A) • Low input capacitance Ciss = 600 pF TYP. 1.4 0.5±0.1 2.54 1.4 0.6±0.1 1 2 3 4 5 6 7 8 910 EQUIVALENT CIRCUIT 3 5 7 9 ORDERING INFORMATION PART NUMBER PACKAGE µ PA1560H 10-pin SIP 2 4 6 8 1 10 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 120 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) + 20, –10 V ID(DC) ±3.0 A ID(pulse) ±12 A Total Power Dissipation (TC = 25°C) PT1 28 W Total Power Dissipation (TA = 25°C) PT2 3.7 W Channel Temperature Tch 150 °C Drain Current (DC) Drain Current (pulse) Note1 Storage Temperature Tstg –55 to + 150 °C Single Avalanche Current Note2 IAS 3.0 A Single Avalanche Energy Note2 EAS 0.9 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 60 V, RG = 25 Ω, VGS = 20 V → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14283EJ1V0DS00 (1st edition) Date Published April 1999 NS CP(K) Printed in Japan © 1999 µ PA1560 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 1.5 A 130 165 mΩ RDS(on)2 VGS = 4.0 V, ID = 1.5 A 145 200 mΩ VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 1.8 2.5 V 2 4.5 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 1.5 A Drain Leakage Current IDSS VDS = 120 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 600 pF Output Capacitance Coss VGS = 0 V 160 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 70 pF Turn-on Delay Time t d(on) ID = 1.5 A 35 ns VGS(on) = 10 V 80 ns td(off) VDD = 60 V 700 ns tf RL = 30 Ω 250 ns Total Gate Charge QG ID = 3.0 A 28 nC Gate to Source Charge QGS VDD = 96 V 2.5 nC Gate to Drain Charge QGD VGS = 10 V 9 nC Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage S VF(S-D) IF = 3.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 3.0 A, VGS = 0 V 160 ns Reverse Recovery Charge Qrr di/dt = 50 A/ µs 280 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. D.U.T. RG = 25 Ω PG L 50 Ω VDD VGS = 20 → 0 V RL RG RG = 10 Ω PG. ID BVDSS VDS 0 Starting Tch τ = 1µ s Duty Cycle ≤ 1 % D.U.T. RL 50 Ω VDD 90 % VDD ID Wave Form TEST CIRCUIT 3 GATE CHARGE IG = 2 mA VGS(on) 10 % 90 % 90 % ID VGS 0 τ VDD 2 Wave Form ID IAS PG. VGS VGS Data Sheet G14283EJ1V0DS00 10 % 0 10 % tr td(on) ton td(off) tf toff µ PA1560 [MEMO] Data Sheet G14283EJ1V0DS00 3 µ PA1560 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8