DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The µPA1853 is a switching device which can be driven directly by a 4-V power source. The µPA1853 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 5 1 2, 3 4 5 6, 7 8 FEATURES 1 ORDERING INFORMATION PACKAGE µPA1853GR-9JG Power TSSOP8 Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS –20/+5 V Drain Current (DC) ID(DC) # 2.5 # 10 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation Note2 ID(pulse) 0.6 +0.15 –0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 0.1 0.8 MAX. 0.27 +0.03 –0.08 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Note1 0.5 4 0.65 Drain Current (pulse) 0.25 0.1±0.05 3.15 ±0.15 3.0 ±0.1 PART NUMBER 1.2 MAX. 1.0±0.05 3° +5° –3° • Can be driven by a 4-V power source • Low on-state resistance RDS(on)1 = 85 mΩ MAX. (VGS = –10 V, ID = –1.5 A) RDS(on)2 = 152 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)3 = 180 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A) 0.145 ±0.055 ★ ★ :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 0.10 M EQUIVALENT CIRCUIT Drain1 Drain2 A Body Diode Gate1 Gate Protection Diode Source1 Body Diode Gate2 Gate Protection Diode Source2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12968EJ1V0DS00 (1st edition) Date Published October 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1997, 1999 µ PA1853 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –30 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = # 20 V, VDS = 0 V # 10 µA VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.7 –2.5 V | yfs | VDS = –10 V, ID = –1.5 A 1 3.6 RDS(on)1 VGS = –10 V, ID = –1.5 A 64 85 mΩ RDS(on)2 VGS = –4.5 V, ID = –1.5 A 114 152 mΩ RDS(on)3 VGS = –4.0 V, ID = –1.5 A 135 180 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 520 pF Output Capacitance Coss VGS = 0 V 200 pF Reverse Transfer Capacitance Crss f = 1 MHz 82 pF Turn-on Delay Time td(on) VDD = –10 V 60 ns tr ID = –1.5 A 220 ns VGS(on) = –10 V 800 ns RG = 10 Ω 620 ns Rise Time Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –24 V 12 nC Gate to Source Charge QGS ID = –2.5 A 2 nC Gate to Drain Charge QGD VGS = –10 V 3 nC 0.73 V Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D12968EJ1V0DS00 µ PA1853 ★ TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 0 30 60 90 120 TA - Ambient Temperature - ˚C V (@ PW ID (DC) −0.1 −100.0 VDS = −10 V −1 ID - Drain Current - A − 4.5 V −6 −4.0 V −4 −10.0 TRANSFER CHARACTERISTICS −10 VGS = −10 V −1.0 VDS - Drain to Source Voltage - V Pulsed −8 ms 10 0m s DC −0.1 150 =1 10 ms −1 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −10 −0.1 TA = 125 ˚C 75 ˚C −0.01 25 ˚C −25 ˚C −0.001 −2 −0.0001 0 −0.2 0 −0.6 −0.4 −0.8 −1.0 −2.0 −3.0 VGS - Gate to Source Voltage - V 0 −1 VDS - Drain to Source Voltage - V −2 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = −10 V ID = −1 mA −1.8 −1.6 −1.4 −1.2 −1 −50 0 50 150 100 −4.0 FORWARD TRANSFER ADMMITTANCE vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V ID (pulse) ) L −10 on = S( RD GS Single Pulse Mounted on Ceramic 2 Substrate of 5000mm x 1.1mm −0.01 PD(FET1) : PD(FET2) = 1:1 20 ID - Drain Current - A d ite V) im −10 VDS = −10 V 10 TA = −25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 −0.1 Tch - Channel Temperature - ˚C Data Sheet D12968EJ1V0DS00 −1 −10 −100 ID - Drain Current - A 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1853 250 VGS = −4.0 V 200 TA = 125˚C 75˚C 150 25˚C −25˚C 100 50 −1 −0.1 −10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = −4.5 V 250 200 150 TA = 125˚C 75˚C 100 −25˚C 25˚C 50 0 −0.1 −1 VGS = −10 V 120 TA = 125˚C 100 75˚C 80 25˚C 60 −25˚C 40 20 −0.1 −1 −10 −100 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 140 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 ID = −1.5 A VGS = −4.0 V 150 −4.5 V 100 0 −50 1000 Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = −1.5 A 250 200 150 100 50 0 0 −5 −10 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz Coss 100 Crss −20 VGS - Gate to Source Voltage - V 4 0 50 100 Tch - Channel Temperature -˚C Ciss 10 −1 −15 −10 V 50 ID - Drain Current - A 300 −100 ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT −10 Data Sheet D12968EJ1V0DS00 −10 VDS - Drain to Source Voltage - V −100 µ PA1853 SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 1000 IF - Source to Drain Current - A td(on), tr, td(off), tf - Swwitchig Time - ns 10000 VDD = −10V VGS(on) = −10V RG = 10Ω tf td(off) tr 100 td(on) 10 −0.1 −1 ID - Drain Current - A VGS = 0 V 1 0.1 0.01 0.001 0.0001 0.4 −10 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS ID = -2.5 A −8 VDD = -24V −6 −4 −2 0 0 2 4 6 8 10 12 QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W VGS - Gate to Source Voltage - V −10 100 62.5˚C/W 10 1 0.1 1m Mounted on Ceramic Substrate of 5000mm2 x 1.1mm Single Pulse PD(FET1) : PD(FET2) = 1:1 10m 100m 1 10 100 1000 PW - Pulse Width - S Data Sheet D12968EJ1V0DS00 5 µ PA1853 [MEMO] 6 Data Sheet D12968EJ1V0DS00 µ PA1853 [MEMO] Data Sheet D12968EJ1V0DS00 7 µ PA1853 • The information in this document is subject to change without notice. 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