DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1902 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA1902 is a switching device, which can be driven • 4.5 V drive available • Low on-state resistance RDS(on)1 = 17 mΩ TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 22 mΩ TYP. (VGS = 4.5 V, ID = 3.5 A) 6 5 4 1 2 3 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µ PA1902TE SC-95 (Mini Mold Thin Type) 1, 2, 5, 6: Drain 3 : Gate 4 : Source Marking: TY ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Drain Current (pulse) Total Power Dissipation Note2 Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 0.4 2.8 ±0.2 switching characteristics, and is suitable for applications such as power management switch of portable machine and so on. FEATURES 0.16 +0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 1.5 directly by a 4.5 V power source. This µ PA1902 features a low on-state resistance and excellent EQUIVALENT CIRCUIT 30 ±20 ±7.0 ±28 0.2 2.0 150 −55 to +150 V V A A W W °C °C Drain Body Diode Gate Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec. Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. (It does not have built-in G-S protection diode.) When this product actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16634EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan 2003 µ PA1902 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1.0 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 3.5 A 3.0 RDS(on)1 VGS = 10 V, ID = 3.5 A 17 22 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.5 A 22 30 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 2.0 S Input Capacitance Ciss VDS = 10 V 780 pF Output Capacitance Coss VGS = 0 V 180 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 1.0 A 16 ns tr VGS = 10 V 10 ns td(off) RG = 6.0 Ω 108 ns 56 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 8.0 nC Gate to Source Charge QGS VGS = 5.0 V 2.7 nC Gate to Drain Charge QGD ID = 7.0 A 3.4 nC IF = 7.0 A, VGS = 0 V 0.84 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet G16634EJ1V0DS µ PA1902 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(DC) 10 1 0.1 PW = 1 ms RDS(on) Limited (at VGS = 10 V) 10 ms 100 ms Single pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 5s 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) 1000 Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10 Single pulse 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16634EJ1V0DS 3 µ PA1902 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 30 100 VDS = 10 V Pulsed Pulsed 10 VGS = 10 V ID - Drain Current - A ID - Drain Current - A 25 20 4.5 V 15 10 5 TA = 125°C 75°C 25°C −25°C 1 0.1 0.01 0.001 0 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1.0 mA 1.9 1.4 50 100 100 150 VDS = 10 V Pulsed 10 TA = −25°C 25°C 75°C 125°C 1 0.1 0.01 VGS = 10 V Pulsed TA = 125°C 75°C 25°C −25°C 20 0 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.5 V Pulsed 40 TA = 125°C 75°C 25°C −25°C 20 0 0.01 0.1 1 ID - Drain Current - A ID - Drain Current - A 4 0.1 ID - Drain Current - A Tch - Channel Temperature - °C 60 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.4 0 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 2 Data Sheet G16634EJ1V0DS 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 50 Pulsed 60 40 ID = 3.5 A 20 0 0 5 10 15 20 25 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1902 ID = 3.5 A Pulsed 40 VGS = 4.5 V 30 20 10 V 10 0 -50 150 1000 VGS = 0 V f = 1M Hz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100 SWITCHING CHARACTERISTICS 1000 C i ss C oss 100 C r ss VDD = 15 V VGS = 10 V RG = 6.0 Ω 0.1 1 10 td(off) 100 tf td(on) 10 tr 10 1 100 0.1 1 VDS - Drain to Source Voltage - V 10 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 100 VGS = 5.0 V ID = 7.0 A 9 Pulsed IF - Diode Forward Current - A VGS - Gate to Source Voltage - V 50 Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 0 8 7 VDD = 24 V 15 V 6V 6 5 4 3 2 10 1 0.1 1 0.01 0 0 1 2 3 4 5 6 7 8 9 10 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge - nC Data Sheet G16634EJ1V0DS 5 µ PA1902 • The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1