DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and 2.8 ±0.2 FEATURES • Two MOS FET circuits in package the same size as SC-59 0.32 +0.1 –0.05 0.16 +0.1 –0.06 1.5 0.65 +0.1 –0.5 saves mounting costs. 0 to 0.1 • Complement to µPA602T • Automatic mounting supported 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 ±0.2 PIN CONNECTION (Top view) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS –50 V Gate to Source Voltage VGSS +16 V Drain Current (DC) ID(DC) –100 mA ID(pulse)* –200 mA Total Power Dissipation PT 300 (Total) mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Drain Current (pulse) * PW ≤ 10 ms, Dury Cycle ≤ 50 % Document No. G11250EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA603T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = –50 V, VGS = 0 – – –1.0 µA Gate Leakage Current IGSS VGS = +16 V, VDS = 0 – – +1.0 µA VGS(off) VDS = –5.0 V, ID = –1.0 µA –1.5 –1.9 –2.5 V |yfs| VDS = –5.0 V, ID = –10 mA 15 – – mS Drain to Source On-State Resistance RDS(on)1 VGS = –4.0 V, ID = –10 mA – 60 100 Ω Drain to Source On-State Resistance RDS(on)2 VGS = –10 V, ID = –10 mA – 40 60 Ω VDS = –5.0 V, VGS = 0, f = 1.0 MHz – 17 – pF Gate Cut-off Voltage Forward Transfer Admittance Input Capacitance Ciss Output Capacitance Coss – 9 – pF Reverse Transfer Capacitance Crss – 1 – pF Turn-On Delay Time td(on) – 45 – ns – 75 – ns td(off) – 25 – ns tf – 80 – ns Rise Time tr Turn-Off Delay Time Fall Time VGS(on) = –4.0 V, RG = 10 Ω, VDD = –5.0 V, ID = –10 mA, RL = 500 Ω Marking: JA SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS VGS DUT RL Gate voltage waveform 10 % VGS(on) 90 % VDD ID RG td(on) PG. Drain current waveform 0 VGS τ τ = 1 µs Duty Cycle ≤ 1 % 2 0 tr td(off) 10 % tf 10 % ID 90 % 90 % µPA603T TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 350 PT - Total Power Dissipation - mW Free air dT - Derating Factor - % 100 80 60 40 20 20 0 40 60 80 100 120 140 160 TC - Case Temperature - ˚C 300 250 200 Pulsed measurement –8 V it 50 25 50 75 100 125 TA - Ambient Temperature - ˚C –6 V –4 V ID - Drain Current - mA ID - Drain Current - mA –10 VGS = –2 V –1 TA = 150 ˚C 75 ˚C 25 ˚C –25 ˚C –0.1 –0.01 –20 –2 –4 –6 –8 –10 –12 VDS - Drain to Source Voltage - V –0.001 –14 VDS = –5.0 V Pulsed measurement 0 –5 –10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE –2.0 –1.8 –1.6 –1.4 150 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V 100 VDS = –5.0 V ID = –1 µ A 0 30 60 90 120 Tch - Channel Temperature - ˚C –15 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT –2.4 –1.2 –30 150 TRANSFER CHARACTERISTICS –60 –2.2 un –100 –80 0 l ne 100 0 –100 –40 ta ro 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –120 To Pe VDS = –5.0 V 50 20 TA = –25 ˚C 10 25 ˚C 5 75 ˚C 150 ˚C 2 1 –1 –2 –5 –10 –20 ID - Drain Current mA –50 –100 3 100 Pulsed measurement ID = –1 mA ID = –10 mA 50 –4 –8 –12 –16 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 0 RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE –20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 100 25 ˚C 50 0 –1 –25 ˚C –2 100 VGS = –4 V ID = –10 mA 120 100 80 60 40 –5 –10 –20 ID - Drain Current - mA –50 –100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 140 VGS = 0 f = 1 MHz 50 20 Ciss 10 Coss 5 2 1 0.5 Crss 0.2 20 –30 0 30 60 90 120 Tch - Channel Temperature - ˚C 0.1 –0.5 150 tr 200 VDD = –5.0 V VGS = –4 V RG = 10 Ω 100 50 td(on) tf 20 td(off) 10 5 –5 –10 –20 –50 –100 –200 ID - Drain Current - mA –1 –2 –5 –10 –20 –50 –100 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE –500 100 ISD - Source to Drain Current - mA 500 td(on), tr, td(off), tf - Switching Time - ns TA = 150 ˚C 75 ˚C SWITCHING CHARACTERISTICS 4 VGS = –4 V Pulsed measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω µPA603T 10 1 0.1 0.5 0.6 0.7 0.8 0.9 VSD - Source to Drain Voltage - V 1 µPA603T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 µPA603T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11