DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA677TB N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA677TB is a switching device which can be driven directly by a 2.5 V power source. The µPA677TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. +0.1 2.1 ±0.1 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) • Two MOS FET circuits in same size package as SC-70 1.25 ±0.1 0.2 -0 6 +0.1 0.15 -0.05 5 4 0 to 0.1 1 2 0.65 3 0.7 0.65 0.9 ±0.1 1.3 2.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µPA677TB SC-88 (SSP) Marking: WA PIN CONNECTUON (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V ID(DC) ±0.35 A ID(pulse) ±1.40 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation(2units) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 Board of 2500 mm x 1.1 mm 2units total. 6 5 4 1: 2: 3: 4: 5: 6: 1 2 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16598EJ1V0DS00 (1st edition) Date Published March 2003 NS CP(K) Printed in Japan 2003 µPA677TB ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20.0 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±12.0 V, VDS = 0 V ±10 µA VGS(off) VDS = 10.0 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10.0 V, ID = 0.30 A 0.25 0.75 RDS(on)1 VGS = 4.5 V, ID = 0.30 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.30 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state ResistanceNote S Input Capacitance Ciss VDS = 10.0 V 28 pF Output Capacitance Coss VGS = 0 V 11 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 7 pF Turn-on Delay Time td(on) VDD = 10.0 V, ID = 0.30 A 20 ns tr VGS = 4.0 V 51 ns td(off) RG = 10 Ω 94 ns 87 ns 0.84 V Rise Time Turn-off Delay Time Fall Time tf Body Diode Forward Voltage Note VF(S-D) IF = 0.35 A, VGS = 0 V Note Pulsed PW≤350 µs, Duty Cycle≤2% TEST CIRCUIT SWITCHING TIME VGS D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% 90% VDS VDD 90% 90% VDS VDS VGS Wave Form 0 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 Data Sheet G16598EJ1V0DS µPA677TB TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 0.24 100 0.2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 80 60 40 20 Mounted on FR-4 Board of 2 2500 mm x 1.1 mm 2units total 0.16 0.12 0.08 0.04 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C 75 100 125 150 175 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1.4 10 V DS = 10 V Pulsed Pulsed 1.2 V GS = 4.5 V 4.0 V 2.5 V 1 1 ID - Drain Current - A ID - Drain Current - A 50 0.8 0.6 0.4 0.1 T A = 125°C 75°C 25°C −25°C 0.01 0.001 0.2 0 0.0001 0 0.4 0.8 1.2 1.6 0 0.5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2 2.5 3 10 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 1.5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.4 V DS = 10 V ID = 1.0 mA 1.2 1 0.8 0.6 0.4 - 50 1 VGS - Gate to Source Voltage - V 0 50 100 150 Tch - Channel Temperature - °C V DS = 10 V Pulsed 1 T A= −25°C 25°C 75°C 125°C 0.1 0.01 0.001 0.01 0.1 1 10 ID - Drain Current - A Data Sheet G16598EJ1V0DS 3 µPA677TB 1.2 Pulsed 1 VGS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 V GS = 4.0 V, ID = 0.30 A V GS = 4.5 V, ID = 0.30 A 0.2 0 - 50 0 50 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = 0.30 A Pulsed 1 0.8 0.6 0.4 0.2 0 0 2 Tch - Channel Temperature - °C 1.2 V GS = 4.5 V Pulsed 1 0.6 T A = 125°C 75°C 25°C −25°C 0.4 0.2 0 0.01 0.1 1 10 1 T A = 125°C 75°C 25°C −25°C 0.8 0.6 0.4 0.2 0 0.01 0.1 100 V GS = 2.5 V Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 1 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE T A = 125°C 75°C 0.8 0.6 25°C −25°C 0.2 VGS = 0 V f = 1 .0 M H z C is s 10 C oss C rs s 1 0.1 1 10 ID - Drain Current - A 4 12 ID - Drain Current - A 1.2 0 0.01 10 V GS = 4.0 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.4 8 1.2 ID - Drain Current - A 1 6 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.8 4 VGS - Gate to Source Voltage - V 0 .1 1 10 VDS - Drain to Source Voltage - V Data Sheet G16598EJ1V0DS 100 µPA677TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V DD = 10 V V G S = 4 .0 V R G = 10 Ω VGS = 0 V P u ls e d IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 t d (o ff) 100 tf tr 1 0 .1 0 .0 1 t d (o n ) 10 0 .0 1 0 .0 0 1 0 .1 1 10 ID - Drain Current - A 0 .4 0 .6 0 .8 1 1 .2 1 .4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16598EJ1V0DS 5 µPA677TB • The information in this document is current as of February, 2003. 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