DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA678TB P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. +0.1 2.1 ±0.1 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) • Two MOS FET circuits in same size package as SC-70 1.25 ±0.1 0.2 -0 +0.1 0.15 -0.05 6 5 4 1 2 3 0 to 0.1 0.65 0.7 0.65 0.9 ±0.1 1.3 2.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µ PA678TB SC-88 (SSP) Marking: XA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PIN CONNECTION (Top View) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) ID(DC) m0.25 A ID(pulse) m1.00 A PT 0.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (2 units) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm 6 5 4 1. 2. 3. 4. 5. 6. 1 2 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 3 Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with caution for electrostatic discharge. VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16607EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 µ PA678TB ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20.0 V, VGS = 0 V −1.0 µA Gate Leakage Current IGSS VGS = m12.0 V, VDS = 0 V m10 µA −1.8 V Gate Cut-off Voltage Note Forward Transfer Admittance VGS(off) VDS = −10.0 V, ID = −1.0 mA −0.8 −1.3 | yfs | VDS = −10.0 V, ID = −0.20 A 0.2 0.6 RDS(on)1 VGS = −4.5 V, ID = −0.20 A 1.17 1.45 Ω RDS(on)2 VGS = −4.0 V, ID = −0.20 A 1.25 1.55 Ω RDS(on)3 VGS = −2.5 V, ID = −0.15 A 2.25 2.98 Ω Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = −10.0 V 29 pF Output Capacitance Coss VGS = 0 V 15 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 3 pF Turn-on Delay Time td(on) VDD = −10.0 V, ID = −0.20 A 23 ns VGS = −4.0 V 39 ns RG = 10 Ω 50 ns 33 ns 0.88 V Rise Time tr Turn-off Delay Time td(off) Fall Time tf Body Diode Forward Voltage VF(S-D) IF = 0.25 A, VGS = 0 V Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2% TEST CIRCUIT SWITCHING TIME D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS(−) 90% VGS(−) 0 VDS τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet G16607EJ1V0DS µ PA678TB TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 0.24 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 Board of 2 2500 m m x 1.1 m m 2 units total 0.2 0.16 0.12 0.08 0.04 0 0 0 25 50 75 100 125 150 175 0 25 TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 125 150 175 -10 Pulsed V D S = −10 V Pulsed - 0.8 ID - Drain Current - A ID - Drain Current - A 75 FORWARD TRANSFER CHARACTERISTICS -1 V G S = −4.5 V - 0.6 −4.0 V - 0.4 −2.5 V - 0.2 -1 -0.1 T A = 125°C 75°C 25°C −25°C -0.01 -0.001 0 -0.0001 0 - 0.4 - 0.8 - 1.2 - 1.6 -2 0 VDS - Drain to Source Voltage - V V D S = −10 V ID = −1.0 m A - 1.4 - 1.2 -1 - 0.8 - 0.6 0 50 100 -2 -3 -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S - 1.6 -50 -1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V 50 TA - Ambient Temperature - °C 150 10 1 V DS = −10 V Pulsed T A = −25°C 25°C 75°C 125°C 0.1 0.01 - 0.001 Tch - Channel Temperature - °C - 0.01 - 0.1 -1 - 10 ID - Drain Current - A Data Sheet G16607EJ1V0DS 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed VGS = −2.5 V, ID = −0.15 A 3 2 1 VGS = −4.0 V, ID = −0.20 A VGS = −4.5 V, ID = −0.20 A 0 -50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω µ PA678TB DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4 ID = −0.20 A Pulsed 3 2 1 0 0 -2 V GS = −4.5 V Pulsed 3 T A = 125°C 75°C 25°C −25°C 1 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A 4 - 12 V GS = −4.0 V Pulsed T A = 125°C 75°C 2 25°C −25°C 1 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 4 100 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - Ω 4 - 10 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT T A = 125°C 75°C 25°C −25°C 3 2 1 V GS = −2.5 V Pulsed 0 - 0.01 -8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 -6 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 4 -4 - 0.1 -1 - 10 ID - Drain Current - A VGS = 0 V f = 1.0 MHz C iss C oss 10 C rss 1 - 0.1 -1 - 10 VDS - Drain to Source Voltage - V Data Sheet G16607EJ1V0DS - 100 µ PA678TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V D D = −10 V V G S = −4.0 V R G = 10 Ω IF - Diode Forward Current - A td(on), tr, td(off), tf - Switching Time - ns 1000 100 t d(off) tr tf VGS = 0 V Pulsed 1 0.1 0.01 td(on) 10 -0.01 0.001 -0.1 -1 -10 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16607EJ1V0DS 5 µ PA678TB • The information in this document is current as of February, 2003. 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