PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE856, Q2: NE681) 6 2 5 3 4 +0.10 1.3 Q2: = 12.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE 1 0.65 2.0 ± 0.2 |S21E|2 • (Units in mm) Package Outline TS06 (Top View) Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA • UPA831TF 0.6 ± 0.1 0.45 0.22 - 0.05 (All Leads) 0.13 ± 0.05 0 ~ 0.1 DESCRIPTION The UPA831TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range with excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) ELECTRICAL CHARACTERISTICS (TA = 25°C) Q2 Q1 PART NUMBER PACKAGE OUTLINE UPA831TF TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA Cre |S21E|2 NF Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Capacitance2 GHz at VCB = 3 V, IE = 0, f = 1 MHz pF dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB MAX 1 1 3.0 145 4.5 0.7 7 1.5 9 1.2 2.5 0.8 0.8 70 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz Feedback TYP 100 Cre fT MIN 4.5 150 7.0 0.45 10 0.9 12 1.4 2.7 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA831TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 20 VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 10 VEBO Emitter to Base Voltage V 3 1.5 65 IC Collector Current mA 100 PT Total Power Dissipation1 mW 150 150 2002 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. Q1 Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Total Power Dissipation, PT (mW) TYPICAL PERFORMANCE CURVES (TA = 25˚C) Free Air Q1+ Q2 total 200 Q1 when using 1 element Q1 when using 2 elements 100 0 50 100 200 Q2 when using 1 element Q2 when using 2 elements 100 0 150 100 Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 150 20 VCE = 3 V Collector Current, lc (mA) VCE = 3 V Collector Current, lc (mA) 50 Ambient Temperature, TA (°C) 20 10 0 Free Air Q1 + Q2 total 0.5 Base to Emitter Voltage, VBE (V) 1.0 10 0 0.5 Base to Emitter Voltage, VBE (V) 1.0 UPA831TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Q2 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 25 lB=160 µA Collector Current, lc (mA) Collector Current, lc (mA) 140 µA 20 120 µA 100 µA 15 80 µA 10 60 µA 40 µA 5 20 µA 0 5 20 160 µA 140 µA 15 120 µA 100 µA 10 80 µA 60 µA 40 µA 5 lB=20 µA 10 0 0.5 1.0 Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 200 200 VCE = 3 V 100 DC Current Gain, hfe DC Current Gain, hfe VCE = 3 V 50 20 50 20 10 10 0.5 1 5 10 0.5 50 5 10 Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 50 10 Gain Bandwidth Product, fT (GHz) VCE = 3 V f = 1.0 GHz 10 5 2 1 0.5 1 Collector Current, lc (mA) 20 Gain Bandwidth Product, fT (GHz) 100 1 5 10 Collector Current, lc (mA) 50 VCE = 3 V f = 1 GHz 8 6 4 2 0 0.5 1 5 10 Collector Current, lc (mA) 50 UPA831TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 Q2 INSERTION POWER GAIN vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 VCE = 3 V f = 1.0 GHz Insertion Power Gain |S21E|2 (dB) Insertion Power Gain |S21E|2 (dB) 15 10 5 0 0.5 1 5 10 50 VCE = 3 V f = 1 GHz 10 5 0 0.5 100 1 Collector Current, lc (mA) 5 10 Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT 6 5 VCE = 3 V lc = 1GHz VCE = 3 V lc = 1GHz Noise Figure, NF (dB) Noise Figure, NF (dB) 50 4 2 4 3 2 1 0 0 0.5 1.0 5.0 10 50 100 0.5 10 50 Collector Current, lc (mA) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 25 VCE = 3 V lc = 7 mA Insertion Power Gain |S21E|2 (dB) Insertion Power Gain |S21E|2 (dB) 5.0 Collector Current, lc (mA) 24 20 16 12 8 4 0 0.1 1.0 0.2 0.5 1.0 Frequency, f (GHz) 2.0 5.0 VCE = 3 V lc = 7 mA 20 15 10 5 0 0.1 0.2 0.5 1.0 Frequency, f (GHz) 2.0 5.0 UPA831TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q1 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Q2 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 5.0 5.0 f = 1 MHz Feedback Capacitance, CRE (pF) Feedback Capacitance, CRE (pF) f = 1 MHz 2.0 1.0 0.5 0.2 0.1 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 50 1 2 5 10 20 Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.97 0.94 0.90 0.86 0.82 0.79 0.76 0.74 0.72 0.71 0.70 0.71 0.72 0.75 0.78 0.81 S21 ANG -20.45 -40.17 -59.57 -77.29 -94.54 -110.15 -124.06 -136.61 -148.19 -158.16 -175.72 162.88 151.31 136.95 117.97 103.52 MAG 2.38 2.31 2.25 2.10 2.03 1.92 1.80 1.69 1.59 1.48 1.30 1.09 0.97 0.83 0.66 0.54 S12 ANG 162.85 148.19 135.26 123.99 113.53 104.19 95.54 87.82 80.80 74.49 63.28 49.18 41.14 31.08 18.15 10.02 MAG 0.04 0.08 0.11 0.13 0.15 0.16 0.16 0.16 0.16 0.16 0.15 0.13 0.12 0.11 0.13 0.19 ANG 168.67 158.63 149.52 140.98 133.17 125.99 118.72 112.19 105.36 99.41 88.26 73.71 65.42 54.11 37.59 23.49 MAG 0.03 0.05 0.08 0.10 0.11 0.13 0.14 0.14 0.15 0.15 0.16 0.16 0.16 0.16 0.17 0.21 S22 ANG 76.56 63.82 52.97 43.63 36.13 29.28 23.65 19.18 15.47 12.65 8.37 7.58 11.56 23.61 45.08 50.48 MAG 0.98 0.94 0.89 0.83 0.70 0.74 0.70 0.67 0.65 0.64 0.61 0.59 0.58 0.57 0.57 0.58 ANG 82.29 75.10 68.06 61.46 56.13 50.41 46.33 42.16 38.75 36.15 32.01 29.15 29.10 32.04 41.52 47.77 MAG 0.99 0.97 0.94 0.91 0.87 0.83 0.80 0.76 0.73 0.70 0.65 0.58 0.55 0.51 0.44 0.39 ANG -8.59 -16.05 -22.20 -27.30 -31.16 -34.67 -37.55 -40.06 -42.54 -44.88 -49.79 -57.73 -64.34 -74.83 -95.23 -118.13 Q2 VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.96 0.93 0.90 0.87 0.83 0.79 0.75 0.71 0.68 0.62 0.57 0.55 0.55 0.57 0.60 S21 ANG -10.86 -21.63 -32.48 -42.91 -53.63 -64.20 -74.42 -84.40 -94.53 -103.53 -121.59 -145.60 -159.13 -177.12 159.65 142.54 MAG 2.42 2.38 2.38 2.31 2.29 2.25 2.19 2.13 2.10 2.02 1.90 1.71 1.59 1.44 1.24 1.08 S12 S22 ANG -5.27 -10.32 -15.03 -19.41 -22.87 -26.69 -29.29 -32.26 -34.46 -36.40 -40.20 -45.97 -49.98 -57.16 -73.66 -97.59 50 UPA831TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.90 0.83 0.75 0.70 0.65 0.62 0.60 0.59 0.59 0.59 0.59 0.61 0.63 0.66 0.70 0.75 S21 ANG -29.24 -56.61 -82.38 -104.35 -122.97 -138.09 -150.60 -161.35 -170.46 -178.60 167.50 150.72 141.52 130.09 114.27 102.28 MAG 6.73 6.15 5.66 5.08 4.52 4.00 3.57 3.21 2.90 2.65 2.25 1.82 1.61 1.38 1.10 0.91 S12 ANG 156.08 138.83 124.38 112.82 102.90 94.98 88.01 82.00 76.74 71.87 62.99 51.53 44.61 35.44 21.83 10.82 MAG 0.04 0.07 0.09 0.10 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.13 0.14 0.15 0.19 0.22 ANG 162.42 149.12 137.78 127.84 118.67 111.01 103.74 97.61 92.07 87.21 78.56 67.56 61.15 52.04 38.21 25.73 MAG 0.03 0.05 0.06 0.08 0.09 0.09 0.10 0.11 0.11 0.12 0.13 0.15 0.16 0.18 0.22 0.27 S22 ANG 70.94 55.92 46.12 39.45 35.38 32.50 30.78 30.02 29.88 30.03 31.42 34.65 36.98 39.97 42.08 41.10 MAG 0.93 0.82 0.79 0.61 0.54 0.49 0.45 0.42 0.40 0.38 0.36 0.33 0.32 0.31 0.31 0.33 ANG 78.93 69.04 61.85 56.50 53.06 50.34 49.05 48.17 47.67 47.43 47.88 48.47 48.92 49.48 48.34 45.20 MAG 0.96 0.90 0.81 0.74 0.67 0.61 0.57 0.53 0.50 0.47 0.43 0.37 0.34 0.30 0.23 0.16 ANG -16.82 -29.40 -37.28 -42.73 -45.93 -48.61 -50.55 -52.19 -54.08 -55.78 -59.72 -67.05 -73.46 -84.11 -105.22 -128.59 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.92 0.87 0.80 0.73 0.65 0.59 0.53 0.49 0.45 0.43 0.40 0.39 0.39 0.41 0.45 0.51 S21 ANG -16.40 -32.07 -47.67 -62.40 -76.67 -89.52 -101.31 -112.10 -121.85 -130.75 -146.82 -166.97 -177.84 168.36 150.91 138.06 MAG 6.78 6.39 6.14 5.78 5.43 5.01 4.64 4.29 3.96 3.67 3.20 2.67 2.41 2.11 1.77 1.52 S12 S22 ANG -10.26 -19.01 -25.29 -30.21 -33.01 -35.62 -36.97 -38.30 -39.13 -39.97 -41.51 -44.78 -47.49 -52.76 -67.38 -94.47 UPA831TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.84 0.74 0.65 0.60 0.57 0.55 0.54 0.54 0.54 0.54 0.55 0.58 0.60 0.63 0.68 0.72 S21 ANG -37.26 -70.72 -100.04 -122.73 -139.98 -153.16 -163.95 -173.01 179.14 172.20 160.12 145.43 137.23 126.82 112.54 101.25 MAG 10.52 9.17 7.97 6.76 5.74 4.95 4.33 3.85 3.44 3.13 2.63 2.12 1.88 1.60 1.28 1.06 S12 ANG 150.99 131.67 116.47 105.34 96.73 89.92 84.13 78.92 74.44 70.19 62.35 51.94 45.70 37.07 23.75 12.85 MAG 0.04 0.06 0.07 0.08 0.09 0.09 0.10 0.10 0.11 0.11 0.12 0.14 0.15 0.17 0.21 0.24 S22 ANG 67.19 52.38 44.81 41.17 39.62 38.83 38.89 39.22 40.21 40.98 42.12 43.44 44.06 43.80 41.92 38.40 MAG 0.89 0.72 0.58 0.48 0.42 0.37 0.34 0.31 0.30 0.28 0.26 0.23 0.22 0.22 0.22 0.25 ANG -23.52 -38.66 -46.62 -51.47 -54.25 -56.48 -58.22 -59.93 -61.82 -63.63 -68.02 -76.52 -84.21 -96.22 -120.22 -144.01 Q2 VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.87 0.78 0.68 0.58 0.50 0.44 0.40 0.37 0.35 0.34 0.33 0.33 0.34 0.37 0.42 0.48 S21 ANG -21.14 -40.83 -60.06 -77.36 -92.42 -105.23 -116.35 -126.53 -135.66 -143.84 -158.47 -176.15 174.48 162.68 147.53 136.02 MAG 10.54 9.60 8.88 8.02 7.14 6.32 5.64 5.09 4.61 4.22 3.61 2.98 2.67 2.33 1.94 1.66 S12 ANG 157.81 142.32 129.34 118.40 109.32 102.30 96.25 91.05 86.42 82.27 74.93 65.28 59.53 51.31 38.54 26.58 MAG 0.02 0.04 0.06 0.07 0.07 0.08 0.09 0.10 0.10 0.11 0.13 0.15 0.17 0.19 0.24 0.28 S22 ANG 75.42 65.90 60.29 56.88 55.62 54.62 54.78 54.68 54.91 55.25 55.53 55.16 54.56 53.22 49.58 44.44 MAG 0.93 0.83 0.71 0.62 0.55 0.50 0.46 0.43 0.41 0.38 0.35 0.30 0.27 0.23 0.16 0.08 ANG -14.27 -24.65 -30.56 -34.29 -35.99 -37.17 -37.50 -38.10 -38.22 -38.54 -39.34 -41.72 -43.96 -48.42 -62.15 -95.21 UPA831TF TYPICAL SCATTERING PARAMETERS Q1 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.79 0.67 0.59 0.55 0.52 0.52 0.51 0.51 0.52 0.52 0.54 0.56 0.58 0.61 0.66 0.71 S21 ANG -44.32 -82.73 -113.49 -134.72 -150.16 -161.98 -171.56 -179.64 173.30 167.06 156.05 142.49 134.85 125.10 111.51 100.68 MAG 13.71 11.45 9.41 7.67 6.37 5.44 4.71 4.17 3.73 3.38 2.83 2.28 2.02 1.72 1.37 1.14 S12 ANG 146.95 126.15 111.03 100.87 93.24 87.80 81.95 77.28 73.14 69.28 61.95 52.20 46.08 37.91 25.17 14.21 MAG 0.04 0.05 0.07 0.07 0.08 0.08 0.09 0.10 0.10 0.11 0.12 0.14 0.16 0.18 0.22 0.25 ANG 154.03 136.79 122.67 111.78 103.61 97.46 92.14 87.62 83.59 79.82 73.17 64.12 58.72 50.86 38.61 26.84 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.13 0.15 0.17 0.20 0.24 0.29 S22 ANG 64.19 50.70 45.71 44.09 43.89 44.29 44.90 45.68 46.53 47.24 47.51 47.48 47.00 45.50 41.98 37.45 MAG 0.84 0.64 0.49 0.40 0.35 0.31 0.28 0.26 0.24 0.23 0.21 0.19 0.18 0.18 0.19 0.23 ANG 74.13 64.47 60.39 58.88 58.61 58.55 58.93 59.18 59.34 59.51 59.39 58.27 57.18 55.01 50.13 44.44 MAG 0.90 0.76 0.63 0.55 0.49 0.44 0.41 0.38 0.36 0.34 0.31 0.27 0.24 0.20 0.13 0.05 ANG -28.71 -44.98 -52.71 -57.18 -59.82 -62.08 -63.86 -65.85 -67.95 -70.01 -75.34 -85.78 -94.72 -108.59 -134.34 -157.18 Q2 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.82 0.70 0.58 0.48 0.41 0.36 0.33 0.31 0.30 0.29 0.29 0.30 0.32 0.35 0.41 0.47 S21 ANG -25.53 -48.93 -70.56 -88.76 -103.39 -115.73 -126.32 -135.93 -144.44 -152.17 -165.53 178.39 169.88 159.36 145.66 135.02 MAG 13.87 12.25 10.84 9.35 8.02 6.95 6.11 5.46 4.92 4.48 3.81 3.12 2.80 2.43 2.02 1.73 S12 S22 ANG -17.35 -28.32 -33.36 -35.74 -36.45 -36.82 -36.53 -36.68 -36.49 -36.62 -37.07 -39.05 -41.01 -44.79 -57.04 -97.11 UPA831TF TYPICAL SCATTERING PARAMETERS Q2 VCE = 3 V, IC = 10 mA, Z0 = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.75 0.60 0.46 0.38 0.33 0.30 0.28 0.27 0.27 0.26 0.27 0.29 0.30 0.34 0.40 0.46 S21 ANG -31.69 -59.65 -83.01 -100.85 -114.89 -126.72 -136.66 -145.74 -153.56 -160.53 -172.68 173.18 165.76 156.32 143.83 133.92 MAG 18.15 15.27 12.63 10.36 8.65 7.39 6.44 5.71 5.13 4.66 3.95 3.23 2.89 2.51 2.08 1.77 ANG 149.45 130.00 115.55 105.74 98.71 93.39 88.76 84.77 81.10 77.73 71.54 63.03 58.07 50.27 38.52 27.15 MAG 0.02 0.04 0.05 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.13 0.16 0.17 0.20 0.25 0.30 S22 ANG 72.88 64.34 61.90 62.10 62.36 62.91 63.12 63.61 63.35 63.27 62.53 60.56 58.92 56.28 50.51 44.27 MAG 0.86 0.68 0.56 0.48 0.43 0.39 0.36 0.34 0.32 0.31 0.28 0.24 0.22 0.17 0.10 0.02 ANG -20.87 -31.44 -34.79 -35.76 -35.53 -35.09 -34.48 -34.25 -33.89 -33.85 -34.09 -35.98 -37.60 -40.62 -50.92 -101.29 ORDERING INFORMATION BUILT-IN TRANSISTORS 3-pin small mini mold part No. S12 PART NUMBER UPA831TF-T1 Q1 Q2 NE85630 NE68130 QUANTITY 3000 PACKAGING Tape & Reel The UPA834TF features the Q1 and Q2 in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE