IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg (Max.) (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications. D2PAK (TO-263) I2PAK (TO-262) Advanced Process Technology Surface Mount (IRFZ48S/SiHFZ48S) Low-Profile Through-Hole (IRFZ48L/SiHFZ48L) 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb D2PAK (TO-263) IRFZ48SPbF SiHFZ48S-E3 IRFZ48S SiHFZ48S D2PAK (TO-263) IRFZ48STRL SiHFZ48STL I2PAK (TO-262) IRFZ48LPbF SiHFZ48L-E3 - Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C Currenta, e Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Maximum Power Dissipation ID IDM EAS TC = 25 °C TA = 25 °C PD Peak Diode Recovery dV/dtc, e dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Uses IRFZ48/SiHFZ48 data and test conditions. f. Calculated continuous current based on maximum allowable junction temperature. LIMIT 60 ± 20 50 50 290 1.3 100 190 3.7 4.5 - 55 to + 175 300 UNIT V A W/°C mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 WORK-IN-PROGRESS www.vishay.com 1 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.8 UNIT °C / W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = 250 µA MIN. TYP. MAX. UNIT 60 - - V - 0.060 - V/°C 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ΔVDS/TJ VGS(th) Reference to 25 °C, ID = 1 VDS = VGS, ID = 250 µA IGSS IDSS RDS(on) gfs mAc VGS = ± 20 V - - ± 100 VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 ID = 43 Ab VGS = 10 V VDS = 25 V, ID = 43 Ab µA - - 0.018 Ω 27 - - S - 2400 - - 1300 - - 190 - - - 110 - - 29 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 72 A, VDS = 48 V, see fig. 6 and 13b, c Gate-Drain Charge Qgd - - 36 Turn-On Delay Time td(on) - 8.1 - - 250 - - 210 - - 250 - - 7.5 - - - 50c - - 290 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Source Inductance LS VDD = 30 V, ID = 72 A, RG = 9.1 Ω, RD = 0.34 Ω, see fig. 10b, c Between lead, and center of die contact pF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 72 A, VGS = 0 S Vb TJ = 25 °C, IF = 72 A, dI/dt = 100 A/µsb, c - - 2.0 V - 120 180 ns - 500 800 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFZ48/SiHFZ48 data and test conditions. d. Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4. www.vishay.com 2 Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - I AS V DD VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?90377. Document Number: 90377 S-Pending-Rev. A, 23-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1