DATA SHEET BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µPB1005GS REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30-pin plastic SSOP package is suitable for high density surface mounting. The fixed division internal prescaler is needless to input serial counter data. Supply voltage is 3 V. Thus, the µPB1005GS can make RF block fewer components and lower power consumption. This IC is manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC realizes excellent performance, uniformity and reliability. FEATURES • Double conversion : fREFin = 16.368 MHz, f2ndIFout = 4.092 MHz • Integrated RF block : RF/IF frequency down-converter + PLL frequency synthesizer • High-density surface mountable : 30-pin plastic SSOP (9.85 × 6.1 × 2.0 mm) • Needless to input counter data : fixed division internal prescaler • VCO side division : ÷ 200 (÷ 25, ÷ 8 serial prescaler) • Reference division : ÷2 • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 45.0 mA TYP.@VCC = 3.0 V • Gain adjustable externally : Gain control voltage pin (control voltage up vs. gain down) APPLICATION • Consumer use GPS receiver of reference frequency 16.368 MHz, 2nd IF frequency 4.092 MHz ORDERING INFORMATION Part Number µPB1005GS-E1 Remark Package Supplying Form 30-pin plastic SSOP (7.62 mm (300)) Embossed tape 16 mm wide. Pin 1 is in tape pull-out direction. QTY 2.5 kpcs/reel. To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPB1005GS) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P13860EJ3V0DS00 (3rd edition) Date Published April 2000 N CP(K) Printed in Japan The mark shows major revised points. © 1998, 2000 µPB1005GS PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM 2 IF-MIXin 1 30 VCC (IF-MIX) GND (IF-MIX) 2 29 VGC (IF-MIX) RF-MIXout 3 28 IF-MIXout VCC (RF-MIX) 4 27 GND (2ndIF-AMP) 26 2ndlFin1 25 2ndlFin2 7 24 2ndlFbypass 8 23 VCC (2ndIF-AMP) 22 2ndIFout 21 REFout RF-MIXin 5 GND (RF-MIX) 6 VCC (1stLO-OSC) 1stLO-OSC1 1stLO-OSC2 9 GND (1stLO-OSC) 10 VCC (phase detector) 11 PD-Vout3 12 PD-Vout2 ÷25 ÷8 20 VCC (reference block) 19 REFin 13 18 GND (divider block) PD-Vout1 14 17 LOout GND (phase detector) 15 16 VCC (divider block) PD ÷2 Data Sheet P13860EJ3V0DS00 µPB1005GS PRODUCT LINE-UP (TA = +25°°C, VCC = 3.0 V) Type General Purpose Wideband Separate IC Functions (Frequency unit: MHz) Part Number µPC2756T VCC (V) ICC (mA) CG (dB) TA (°C) 6 14 −40 to +85 RF down-converter with osc. Tr 2.7 to 3.3 µPC2756TB µPC2753GR Available 6-pin minimold 20-pin plastic SSOP 2.7 to 3.3 6.5 60 to 79 Clock µPB1003GS Frequency Specific 1 chip IC RF/IF down-converter + PLL synthesizer REF = 18.414 1stIF = 28.644/2ndIF = 1.023 2.7 to 3.3 37.5 72 to 92 −20 to +85 µPB1004GS RF/IF down-converter + PLL synthesizer REF = 16.368 1stIF = 61.380/2ndIF = 4.092 2.7 to 3.3 37.5 72 to 92 −20 to +85 2.7 to 3.3 45.0 72 to 92 −40 to +85 Remark Status 6-pin super minimold IF down-converter with gain control amplifier µPB1005GS Package Discontinued 30-pin plastic SSOP Available Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated products, please refer to their latest data sheets. SYSTEM APPLICATION EXAMPLE GPS receiver RF block diagram • f0 = 1.023 MHz in the diagram. 60f0 RF-MIXout 1575.42 MHz from Antenna LNA 1540f0 • µ PB1005GS is in 40f0 BPF IF-MIXin LPF IF-MIXout VGC 2ndlF-Amp IF-MIX RF-MIX 4.092 MHz 4f0 1540f0 example: µ PC2749TB . 2ndlFin1 2ndlFin2 2ndlFbypass Buff to Demodulator BPF 64f0 8f0 1/25 1/8 PD 16f0 1/2 1600f0 16.368 MHz Buff to Demodulator REF OSC LOOP 8f0 AMP 1stLO-OSC1 1stLO-OSC2 16f0 LOout VCC TCXO 16.368 MHz Caution This diagram schematically shows only the µPB1005GS’s internal functions on the system. This diagram does not present the actual application circuits. Data Sheet P13860EJ3V0DS00 3 µPB1005GS ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C 3.6 V Total Circuit Current ICC TA = +25°C 128 mA Power Dissipation PD Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB at TA = +85°C 464 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C RECOMMENDED OPERATING RANGE Parameter 4 Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA −40 +25 +85 °C RF Input Frequency fRFin 1575.42 MHz 1stLO Oscillating Frequency f1stLOin 1616.80 1636.80 1656.80 MHz 1stIF Input Frequency f1stIFin 61.380 MHz 2ndLO Input Frequency f2ndLOin 65.472 MHz 2ndIF Input/output Frequency f2ndIFin f2ndIFout 4.092 MHz Reference Input/output Frequency fREFin fREFout 16.368 MHz Data Sheet P13860EJ3V0DS00 µPB1005GS ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = 3.0 V) Parameter Total Circuit Current Symbol ICCtotal Conditions ICC1 + ICC2 + ICC3 + ICC4 MIN. TYP. MAX. Unit 32.0 45.0 60.0 mA RF Down-converter Block (fRFin = 1575.42 MHz, f1stLOin = 1636.80 MHz, PLOin = −10 dBm, ZL = ZS = 50 Ω) Circuit Current 1 ICC1 No Signals 6.0 10.0 14.0 mA RF Conversion Gain CGRF PRFin = −40 dBm 12.5 15.5 18.5 dB RF-SSB Noise Figure NFRF PRFin = −40 dBm 7 10 13 dB PO(sat)RF PRFin = −10 dBm −5.5 −2.5 +0.5 dBm Maximum IF Output Power IF Down-converter Block (f1stIFIn = 61.38 MHz, f2ndLOIn = 65.472 MHz, ZS = 50 Ω, ZL = 2 kΩ) Circuit Current 2 IF Voltage Conversion Gain IF-SSB Noise Figure Maximum 2nd IF Output Power ICC2 No Signals 3.4 5.3 7.2 mA CG(GV)IF at Maximum Gain, P1stIFin = −50 dBm 38 41 44 dB NFIF at Maximum Gain, P1stIFin = −50 dBm 8.5 11.5 14.5 dB PO(sat)IF at Maximum Gain, P1stIFin = −20 dBm −9.5 −6.5 −3.5 dBm Gain Control Voltage VGC Voltage at Maximum Gain of CGIF 1.0 V Gain Control Range DGC P1stIFin = −50 dBm 20 dB 1.55 2.40 3.25 mA 2nd IF Amplifier (f2ndIF = 4.092 MHz, ZS = 50 Ω, ZL = 2 kΩ) Circuit Current 3 ICC3 No Signals Voltage Gain GV P2ndIFin = −60 dBm 37 40 43 dB PO(sat) P2ndIFin = −30 dBm −14.5 −11.5 −8.5 dBm PLL All Block Operating 18.5 28.5 38.5 mA PLL Loop 8.0 8.184 8.4 MHz ZL = 10 kΩ//20 pF (Impedance of measurement equipment) 200 mVP-P Maximum Output Power PLL Synthesizer Block Circuit Current 4 Phase Comparing Frequency ICC4 fPD Reference Input Minimum Level VREFin Loop Filter Output Level (H) VLP(H) 2.8 V Loop Filter Output Level (L) VLP(L) 0.4 V Reference Output Swing VREFout 1.0 VP-P ZL = 10 kΩ//2 pF (Impedance of measurement equipment) Data Sheet P13860EJ3V0DS00 5 µPB1005GS STANDARD CHARACTERISTICS (Unless otherwise specified TA = +25°°C, VCC = 3.0 V) Parameter Symbol Conditions Reference Unit RF Down-converter Block (P1stLOin = −10 dBm, ZL = ZS = 50 Ω) LO Leakage to IF Pin LOif f1stLOin = 1636.80 MHz −30 dBm LO Leakage to RF Pin LOrf f1stLOin = 1636.80 MHz −30 dBm fRFin1 = 1600 MHz, fRFin2 = 1605 MHz f1stLOin = 1660 MHz −13 dBm Input 3rd Order Intercept Point IIP3RF IF Down-converter Block (1stLO oscillating, ZS = 50 Ω, ZL = 2 kΩ) 6 LO Leakage to 2nd IF Pin LO2ndif f2ndLOin = 65.472 MHz −20 dBm LO Leakage to 1st IF Pin LO1stif f2ndLOin = 65.472 MHz −40 dBm Input 3rd Order Intercept Point IIP3IF f1stIFin1 = 61.38 MHz, f1stIFIn2 = 61.48 MHz f2ndLOin = 65.472 MHz −34 dBm Data Sheet P13860EJ3V0DS00 µPB1005GS PIN EXPLANATION Pin No. 3 4 5 Pin Name RX-MIXout VCC (RF-MIX) RF-MIXin Applied Voltage (V) Pin Voltage (V) 1.68 2.7 to 3.3 1.20 Function and Application Output pin of RF mixer. 1st IF filter must be inserted between pin 1 & 3. Supply voltage pin of RF mixer block. This pin must be decoupled with capacitor (eg. 1 000 pF). Ground pin RF mixer. VCC (1stLO-OSC) 2.7 to 3.3 Supply voltage pin of differential amplifier for 1st LO oscillator circuit. 8 1stLO-OSC1 1.88 9 1stLO-OSC2 1.88 10 GND (1stLO-OSC) 0 GND (RF-MIX) 7 11 VCC (phase 12 13 14 15 PD-Vout3 PD-Vout2 PD-Vout1 GND (phase detector) Pin 8 & 9 are each base pin of differential amplifier for 1st LO oscillator. These pins should be equipped with LC and varactor to oscillate on 1636.80 MHz as VCO. Ground pin of differential amplifier for 1st LO oscillator circuit. 2.7 to 3.3 Supply voltage pin of phase detector and active loop filter. Pull-up with resistor Pins of active loop filter for tuning voltage output. The active transistors configured with darlington pair are built on chip. Pin 14 should be pulled down with external resistor. Pin 12 to 13 should be equipped with external RC in order to adjust dumping factor and cutoff frequency. This tuning voltage output must be connected to varactor diode of 1st LO-OSC. detector) Pull-up with resistor 0 Output in accordance with phase difference 4 1stLO -OSC 3 5 Input pin of RF mixer. 1 575.42 MHz band pass filter can be inserted between pin 5 and external LNA. 0 6 Internal Equivalent Circuit 6 7 VCC RF-MIX or Prescaler input 8 9 10 11 13 PD 15 12 14 Ground pin of phase detector + active loop filter. Data Sheet P13860EJ3V0DS00 7 µPB1005GS Pin No. 16 Pin Name VCC (divider block) Applied Voltage (V) Pin Voltage (V) 2.7 to 3.3 17 LOout 2.08 18 GND (divider block) 0 1.96 19 20 REFin VCC (reference block) 2.7 to 3.3 Function and Application Internal Equivalent Circuit Supply voltage pin of prescalers. 16 Monitor pin of comparison frequency at phase detector. 1st LO OSC Ground pin of prescalers + LOout amplifier 18 Input pin of reference frequency. This pin should be equipped with external 16.368 MHz oscillator (e.g. TCXO). 20 Supply voltage pin of input/output amplifiers in reference block. IF MIX ÷25 PD ÷8 PD 17 ÷2 Ref. 21 19 PD 21 22 REFout 2ndIFout 1.65 1.56 Output pin of reference frequency. The frequency from pin 19 can be took out as 1 VP-P swing. Output pin of 2nd IF amplifier. This pin output 4.092 MHz clipped sinewave. This pin should be equipped with external inverter to adjust level to next stage on user’s system. 23 VCC (2ndIF-AMP) 2.7 to 3.3 24 2ndIF bypass 2.30 Bypass pin of 2nd IF amplifier input 1. This pin should be grounded through capacitor. 25 2ndIFin2 2.35 Pin of 2nd IF amplifier input 2. This pin should be grounded through capacitor. 26 2ndIFin1 2.35 Pin of 2nd IF amplifier input 1. 2nd IF filter can be inserted between pin 26 & 28. 27 GND (2ndIF-AMP) 0 Ground pin of 2nd IF amplifier. Supply voltage pin of 2nd IF amplifier. 18 23 24 26 8 Data Sheet P13860EJ3V0DS00 25 27 22 µPB1005GS Pin No. 28 29 Pin Name IF-MIXout VGC (IF-MIX) Applied Voltage (V) Pin Voltage (V) 1.15 0 to 3.3 2.7 to 3.3 IF-MIXin 2.05 GND (IF-MIX) 0 30 VCC (IF-MIX) 1 2 Caution Function and Application Output pin from IF mixer. IF mixer output signal goes through gain control amplifier before this emitter follower output port. Gain control voltage pin of IF mixer output amplifier. This voltage performs forward control (VGC up → Gain down). Supply voltage pin of IF mixer, gain control amplifier and emitter follower transistor. Internal Equivalent Circuit 29 30 1 2nd LO 28 2 Input pin of IF mixer. Ground pin of IF mixer. Ground pattern on the board must be formed as wide as possible to minimize ground impedance. Data Sheet P13860EJ3V0DS00 9 µPB1005GS TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = 3.0 V) Total Circuit Current ICCTOTAL (mA) − −IC TOTAL− TOTAL CIRCUIT CURRENT vs. SUPPLY VOLTAGE 80 No signals 70 60 TA = + 85°C 50 40 TA = + 25°C 30 TA = − 40°C 20 10 0 0 1 2 3 4 Supply Voltage VCC (V) − −RF DOWN-CONVERTER BLOCK− CIRCUIT CURRENT vs. SUPPLY VOLTAGE 12 Circuit Current ICC (mA) No signals 10 8 6 4 2 0 0 1 2 3 4 Supply Voltage VCC (V) 1st IF OUTPUT POWER vs. RF INPUT POWER 0 − 10 fRFin = 1.575420 GHz f1stLOin = 1.63680 GHz P1stLOin = − 10 dBm f1stIFout = 61.38 MHz VCC = 3.3 V − 20 VCC = 3.0 V − 30 − 40 VCC = 2.7 V − 50 − 60 − 70 − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 1st IF OUTPUT POWER vs. RF INPUT POWER + 10 1st IF Output Power P1stIFout (dBm) 1st IF Output Power P1stIFout (dBm) + 10 0 + 10 0 − 10 fRFin = 1.575420 GHz f1stLOin = 1.63680 GHz P1stLOin = − 10 dBm f1stIFout = 61.38 MHz − 20 − 30 TA = − 40 °C − 40 TA = + 85 °C − 50 − 60 − 70 − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 RF Input Power PRFin (dBm) RF Input Power PRFin (dBm) 10 TA = + 25 °C Data Sheet P13860EJ3V0DS00 0 + 10 1st IF OUTPUT POWER vs. 1st LO INPUT POWER − 10 fRFin = 1.57542 MHz PRFin = − 40 dBm − 15 f1stLOin = 1636.8 MHz f1stIFout = 61.38 MHz − 20 VCC = 3.3 V VCC = 3.0 V − 25 − 30 VCC = 2.7 V − 35 − 40 − 50 − 40 − 30 − 20 − 10 RF Conversion Gain CGRF (dB) 1st IF Output Power P1stIFout (dBm) µPB1005GS 15 VCC = 2.7 V 5 0.1 RF CONVERSION GAIN vs. 1st IF OUTPUT FREQUENCY 30 fRFin = 1.57542 GHz PRFin = − 40 dBm 25 P1stLOin = − 10 dBm fLOin = fRFin + fIFout 20 Upper Local VCC = 3.3 V 15 VCC = 3.0 V VCC = 2.7 V 5 0 10 30 100 0.3 1.0 2.0 RF Input Frequency fRFin (GHz) 300 1 000 1st IF Output Frequency f1stIFout (MHz) 3rd ORDER INTERMODULATON DISTORTION, 1st IF OUTPUT POWER OF EACH TONE vs. RF INPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBm) 1st IF Output Power of Each Tone P1stIFout (each) (dBm) RF Conversion Gain CGRF (dB) 1st LO Input Power P1stLOin (dBm) 10 VCC = 3.0 V 10 0 + 10 0 RF CONVERSION GAIN vs. RF INPUT FREQUENCY 30 PRFin = − 40 dBm P1stLOin = − 10 dBm 25 f1stIFout = 61.38 MHz fLO = fRFin + f1stIFout VCC = 3.3 V 20 + 20 fRFin1 = 1 600 MHz fRFin2 = 1 605 MHz f1stLOin = 1 660 MHz P1stLOin = − 10 dBm Upper Local + 10 0 − 10 − 20 − 30 P1stIFout − 40 (each) IM3 − 50 − 60 − 70 − 80 − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 RF Input Power of Each Tone PRFin (each) 0 + 10 (dBm) − −IF DOWN-CONVERTER BLOCK− CIRCUIT CURRENT vs. SUPPLY VOLTAGE 12 Circuit Current ICC (mA) No signals 10 8 6 4 2 0 0 1 2 3 4 Supply Voltage VCC (V) Data Sheet P13860EJ3V0DS00 11 2nd IF OUTPUT POWER vs. 1st IF INPUT POWER 0 VCC = 3.3 V f1stIFin = 61.38 MHz − 5 f2ndLOin = 65.472 MHz − 10 P2ndLOin = − 10 dBm f2ndFout = 4.092 MHz − 15 VGC = GND − 20 VCC = 3.0 V − 25 − 30 − 35 VCC = 2.7 V − 40 − 45 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 2nd IF OUTPUT POWER vs. 1st IF INPUT POWER 0 2nd IF Output Power P2ndIFout (dBm) 2nd IF Output Power P2ndIFout (dBm) µPB1005GS f1stIFin = 61.38 MHz f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndFout = 4.092 MHz VGC = GND −5 − 10 − 15 − 20 TA = − 40°C − 25 − 35 − 40 − 45 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 VCC = 3.0 V 40 35 VCC = 2.7 V 30 P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz VGC = GND 30 IF CONVERSION GAIN vs. 1st IF INPUT FREQUENCY 50 IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) VCC = 3.3 V 45 10 50 70 100 45 35 35 VCC = 2.7 V 30 5 7 30 P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz VGC = GND 20 10 30 25 10 45 50 70 100 TA = − 40°C TA = + 25°C 40 35 TA = + 85°C 30 f1stIFin = 61.38 MHz P1stIFin = − 50 dBm 25 P2ndLOin = − 10 dBm f2ndIFout = f1stIFin − f2ndLOin VGC = GND 20 1 3 2nd IF Output Frequency f2ndIFout (MHz) 12 TA = + 25°C IF CONVERSION GAIN vs. 2nd IF OUTPUT FREQUENCY 50 IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) VCC = 3.3 V 40 f1stIFin = 61.38 MHz P1stIFin = − 50 dBm 25 P2ndLOin = − 10 dBm f2ndIFout = f1stIFin − f2ndLOin VGC = GND 20 1 3 TA = + 85°C 1st IF Input Frequency f1stIFin (dBm) IF CONVERSION GAIN vs. 2nd IF OUTPUT FREQUENCY 50 VCC = 3.0 V TA = − 40°C 40 1st IF Input Frequency f1stIFin (MHz) 45 0 1st IF Input Power P1stIFin (dBm) IF CONVERSION GAIN vs. 1st IF INPUT FREQUENCY 50 20 TA = + 25°C − 30 1st IF Input Power P1stIFin (dBm) 25 TA = + 85°C Data Sheet P13860EJ3V0DS00 5 7 2nd IF Output Frequency f2ndIFout (MHz) 10 IF CONVERSION GAIN vs. GAIN CONTROL VOLTAGE 50 VCC = 3.3 V 40 30 VCC = 3.0 V 20 10 VCC = 2.7 V 0 f1stIFin = 61.38 MHz P1stIFin = − 50 dBm f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz − 10 − 20 − 30 0 0.5 1 1.5 2 2.5 3 IF CONVERSION GAIN vs. GAIN CONTROL VOLTAGE 50 TA = − 40°C IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) µPB1005GS 40 TA = + 85°C 30 TA = + 25°C 20 10 0 f1stIFin = 61.38 MHz P1stIFin = − 50 dBm f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz − 10 − 20 − 30 0 0.5 1 1.5 2 2.5 3 Gain Control Voltage VGC (V) Gain Control Voltage VGC (V) 3rd Order Intermodulation Distortion IM3 (dBm) 2nd IF Output Power of Each Tone P2ndIFout (each) (dBm) 3rd ORDER INTERMODULATION DISTORTION, 2nd IF OUTPUT POWER OF EACH TONE vs. 2nd IF INPUT POWER OF EACH TONE 0 − 10 − 20 P2ndIFout − 30 (each) − 40 IM3 − 50 − 60 f1stIFin1 = 61.38 MHz f1stIFin2 = 61.48 MHz f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm VGC = GND − 70 − 80 − 90 − 100 − 80 − 70 − 60 − 50 − 40 − 30 2nd IF Input Power of Each Tone P1stIFin (each) − 20 (dBm) − −IF AMPLIFIER BLOCK− CIRCUIT CURRENT vs. SUPPLY VOLTAGE 4 Circuit Current ICC (mA) No signals 3 2 1 0 0 1 2 3 4 Supply Voltage VCC (V) Data Sheet P13860EJ3V0DS00 13 2nd IF OUTPUT POWER vs. 2nd IF INPUT POWER + 10 f2ndIFin = 4.092 MHz RL = 2 kΩ 0 VCC = 3.3 V VCC = 3.0 V − 10 − 20 VCC = 2.7 V − 30 − 40 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 2nd IF Output Power P2ndIFout (dBm) 2nd IF Output Power P2ndIFout (dBm) µPB1005GS 0 2nd IF OUTPUT POWER vs. 2nd IF INPUT POWER + 10 f2ndIFin = 4.092 MHz RL = 2 kΩ 0 TA = − 40°C − 10 TA = + 25°C − 20 TA = + 85°C − 30 − 40 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 2nd IF Input Power P2ndIFin (dBm) 2nd IF Input Power P2ndIFin (dBm) VOLTAGE GAIN vs. INPUT FREQUENCY 42 VOLTAGE GAIN vs. INPUT FREQUENCY 42 P2ndIFin = − 60 dBm RL = 2 kΩ P2ndIFin = − 60 dBm RL = 2 kΩ VCC = 3.0 V VCC = 3.3 V 40 39 VCC = 2.7 V 38 37 TA = + 25°C 40 39 TA = + 85°C 38 37 0.1 1 10 100 36 0.1 − −PLL SYNTHESIZER BLOCK− CIRCUIT CURRENT vs. SUPPLY VOLTAGE 40 Circuit Current ICC (mA) No signals 30 20 10 0 0 1 2 3 1 10 Input Frequency fin (MHz) Input Frequency fin (MHz) 4 Supply Voltage VCC (V) 14 TA = − 40°C 41 Voltage Gain GV (dB) Voltage Gain GV (dB) 41 36 0 Data Sheet P13860EJ3V0DS00 100 µPB1005GS − −REFERENCE BLOCK− Reference Output Swing VREFout (VP-P) 2.0 PREFin = 1.0VP-P 1.5 VCC = 3.3 V VCC = 3.0 V 1.0 VCC = 2.7 V 0.5 0 Reference Output Swing VREFout (VP-P) REFERENCE OUTPUT SWING vs. REFERENCE INPUT FREQUENCY 1 10 PREFin = 1.0VP-P 1.5 1.0 TA = + 85°C 0.5 1 10 100 Reference Input Frequency fREFin (MHz) REFERENCE OUTPUT SWING vs. REFERENCE INPUT POWER REFERENCE OUTPUT SWING vs. REFERENCE INPUT POWER fREFin = 16.368 MHz 1.5 VCC = 3.0 V VCC = 3.3 V 1.0 VCC = 2.7 V 0.5 − 40 − 30 − 20 − 10 + 10 0 2.0 fREFin = 16.368 MHz 1.5 TA = − 40°C TA = + 25°C 1.0 TA = + 85°C 0.5 0 − 50 Reference Input Power PREFin (dBm) Remark TA = − 40°C TA = + 25°C Reference Input Frequency fREFin (MHz) 2.0 0 − 50 2.0 0 100 Reference Output Swing VREFout (VP-P) Reference Output Swing VREFout (VP-P) REFERENCE OUTPUT SWING vs. REFERENCE INPUT FREQUENCY − 40 − 30 − 20 − 10 0 + 10 Reference Input Power PREFin (dBm) The graphs indicate nominal characteristics. Data Sheet P13860EJ3V0DS00 15 µPB1005GS TEST CIRCUIT Signal Generator 1PIN C1 50Ω 30 1 VCC C23 Spectrum Analyzer 2 29 3 28 C21 C2 50Ω To get maximum gain, apply 1.0V MAX. C22 Spectrum Analyzer R6 VCC Signal Generator 4 27 5 26 C3 50Ω 50Ω C20 C4 ÷25 Signal Generator 25 6 C19 VCC 7 24 8 23 C5 C18 R1 V-Di C6 ÷8 9 C17 VCC C16 Spectrum Analyzer or Oscilloscope 22 R5 C7 R2 VCC C8 10 21 11 20 Spectrum Analyzer C15 R3 PD 12 C9 R4 ÷2 VCC C14 19 50Ω C13 C10 13 18 14 17 15 16 Signal Generator Spectrum Analyzer or Oscilloscope C12 C11 VCC Spectrum Analyzer: measure frequency Oscilloscope : measure output voltage swing Component List Form Chip capacitor Ceramic capacitor Chip resistor Varactor Diode Chip inductor 16 Symbol Value C1 to C5, C8, C11 to C15, C17, C18, C22 1 000 pF C6, C7 24 pF (UJ) C9 1 800 pF C10 33 nF C19 10 000 pF C23 1 µF C16, C20 0.1 µF C21 0.01 µF R1, R2 4.7 kΩ R3 6.2 kΩ R4 1.2 kΩ R5, R6 1.95 kΩ V−Di HVU12 L 2.7 nH Data Sheet P13860EJ3V0DS00 µPB1005GS PACKAGE DIMENSIONS 30 PIN PLASTIC SHRINK SOP (300 mil) (UNIT: mm) 30 16 detail of lead end 3˚ +7˚ –3˚ 1 15 9.85 ± 0.26 8.1 ± 0.2 6.1 ± 0.2 2.0 MAX. 1.7 ± 0.1 1.0 ± 0.2 0.5 ± 0.2 0.65 0.3 ± 0.1 0.10 0.51 MAX. 0.15 +0.10 –0.05 0.10 M 0.125 ± 0.075 NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. Data Sheet P13860EJ3V0DS00 17 µPB1005GS NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin. (5) Frequency signal input/output pins must be each coupled with capacitor for DC cut. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). 18 Data Sheet P13860EJ3V0DS00 µPB1005GS [MEMO] Data Sheet P13860EJ3V0DS00 19 µPB1005GS ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8