NEC UPC2758TB

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2757TB, µPC2758TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
DESCRIPTION
The µPC2757TB and µPC2758TB are silicon monolithic integrated circuit designed as 1st frequency downconverter for cellular/cordless telephone receiver stage.
The ICs consist of mixer and local amplifier.
The
µPC2757TB features low current consumption and the µPC2758TB features improved intermodulation. From these
two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller
package than conventional T suffix ICs contribute to reduce your system size.
The µPC2757TB and µPC2758TB are manufactured using NEC’s 20 GHz fT NESAT™||| silicon bipolar process.
This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from
external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Wideband operation
: fRFin = 0.1 to 2.0 GHz, fIFin = 20 to 300 MHz
• High-density surface mounting
: 6-pin super minimold package
• Low current consumption
: ICC = 5.6 mA TYP. @ µPC2757TB
ICC = 11 mA TYP. @ µPC2758TB
• Supply voltage
: VCC = 2.7 to 3.3 V
• Minimized carrier leakage
: Due to double balanced mixer
• Equable output impedance
: Single-end push-pull IF amplifier
• Built-in power save function
APPLICATIONS
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: GSM, PDC800M, PDC1.5G and so on): µPC2758TB
• Cellular/cordless telephone up to 2.0 GHz MAX. (example: CT1, CT2 and so on): µPC2757TB
ORDERING INFORMATION
Part Number
µPC2757TB-E3
µPC2758TB-E3
Package
6-pin
super
minimold
Markings
Supplying Form
C1X
Embossed tape 8 mm wide.
Pin 1, 2, 3 face the tape perforation side.
Qty 3kpcs/reel.
C1Y
Product Type
Low current consumption
High OIP3
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC2757TB, µPC2758TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12771EJ2V0DS00 (2nd edition)
Date Published June 2000 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1997, 2000
µPC2757TB, µPC2758TB
PIN CONNECTIONS
µPC2757TB, µPC2758TB in common
C1X
(Top View)
3
2
1
(Bottom View)
Pin No.
Pin Name
4
4
3
1
RFinput
5
5
2
2
GND
6
6
1
3
LOinput
4
PS
5
VCC
6
IFoutput
Example marking is for µPC2757TB
PRODUCT LINE-UP (TA = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω)
Items
Part No.
No RF
ICC
(mA)
900 MHz 1.5 GHz 1.9 GHz 900 MHz
CG
SSB · NF SSB · NF SSB · NF
(dB)
(dB)
(dB)
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
µPC2757T
µPC2757TB
5.6
10
10
13
15
15
13
−14
−14
−12
11
9
10
13
19
18
17
−13
−12
−11
8.5
9
11
11
15
13
13
−10
−9
−7
900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
−3
−
−8
−
−
−
µPC2758T
µPC2758TB
µPC8112T
µPC8112TB
Items
Part No.
µPC2757T
µPC2757TB
µPC8112T
µPC8112TB
Remark
Packages
6-pin minimold
6-pin super minimold
Emitter follower
µPC2758T
µPC2758TB
IF Output
Configuration
+1
−
−4
−
−
6-pin minimold
−
6-pin super minimold
−2.5
−3
−3
−80
−57
−55
6-pin minimold
Open collector
6-pin super minimold
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
Caution The µPC2757 and µPC2758’s IIP3 are calculated with ∆IM3 = 3 which is the same IM3 inclination as
µPC8112. On the other hand, OIP3 of Standard characteristics in page 6 is cross point IP.
2
Data Sheet P12771EJ2V0DS00
µPC2757TB, µPC2758TB
INTERNAL BLOCK DIAGRAM (µPC2757TB, µPC2758TB in common)
RF
input
IF
output
POWER
SAVE
LO
input
VCC
GND
SYSTEM APPLICATION EXAMPLE
DIGITAL CELLULAR TELEPHONE
µ PC2758TB
Low noise Tr.
DEMOD.
RX
VCO
÷N
I
Q
PLL
SW
PLL
0˚
TX
I
φ
PA
90˚
Q
To know the associated products, please refer to each latest data sheet.
Data Sheet P12771EJ2V0DS00
3
µPC2757TB, µPC2758TB
PIN EXPLANATION (Both µPC2757TB, 2758TB)
Pin
No.
Pin
Name
Applied
Voltage (V)
Pin Voltage
Note
(V)
1
RFinput
−
1.2
Function and Application
This pin is RF input for mixer
designed as double balance type.
This circuit contributes to suppress
spurious signal with minimum LO
and bias power consumption.
Also this symmetrical circuit can
keep specified performance insensitive to process-condition
distribution.
2
GND
GND
–
This pin is ground of IC.
Must be connected to the system
ground with minimum inductance.
Ground pattern on the board should
be formed as wide as possible.
(Track length should be kept as
short as possible.)
3
LOinput
–
1.3
This pin is LO input for local buffer
designed as differential amplifier.
Recommendable input level is –15
to 0 dBm. Also this symmetrical
circuit can keep specified
performance insensitive to processcondition distribution.
4
PS
VCC or GND
–
Internal Equivalent Circuit
VCC
To IF
Amp.
From
LO
1
−
VCC
Mixer
3
This pin is for power-save function.
This pin can control ON/OFF
operation with bias as follows;
Bias: V
VPS
VCC
4
Operation
≥ 2.5
ON
0 to 0.5
OFF
Rise time/fall time using this pin are
approximately 10 µs.
5
VCC
2.7 to 3.3
–
Supply voltage 3.0 ±0.3 V for
operation. Must be connected
bypass capacitor. (example: 1 000
pF) to minimize ground impedance.
6
IFoutput
–
1.7
This pin is output from IF buffer
amplifier designed as single-ended
push-pull type. This pin is assigned
for emitter follower output with lowimpedance. In the case of
connecting to high-impedance
stage, please attach external
matching circuit.
Note Each pin voltage is measured with VCC = 3.0 V
4
Data Sheet P12771EJ2V0DS00
−
VCC
6
µPC2757TB, µPC2758TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
5.5
V
Power Dissipation of Package Allowance
PD
Mounted on 50 × 50 × 1.6 mm
double sided copper clad epoxy
glass board at TA = +85°C
200
mW
Operating Ambient Temperature
TA
–40 to +85
°C
Storage Temperature
Tstg
–55 to +150
°C
PS Pin Voltage
VPS
5.5
V
TA = +25°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
–40
+25
+85
°C
PLOin
–15
–10
0
dBm
LO Input Level
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50 Ω)
µPC2757TB
Parameter
Symbol
µPC2758TB
Conditions
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Circuit Current
ICC
No input signal
3.7
5.6
7.7
6.6
11
14.8
mA
RF Frequency
Response
fRF
CG ≥ (CG1 –3 dB)
fIFout = 130 MHz constant
0.1
−
2.0
0.1
−
2.0
GHz
IF Frequency
Response
fIF
CG ≥ (CG1 –3 dB)
fRFin = 0.8 GHz constant
20
−
300
20
−
300
MHz
Conversion Gain 1
CG1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –40 dBm, Upper local
12
15
18
16
19
22
dB
Conversion Gain 2
CG2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –40 dBm, Lower local
10
13
16
14
17
20
dB
Single Sideband
Noise Figure 1
SSB • NF1 fRFin = 0.8 GHz, fIFout = 130 MHz,
SSB mode, Upper local
−
10
13
−
9
12
dB
Single Sideband
Noise Figure 2
SSB • NF2 fRFin = 2.0 GHz, fIFout = 250 MHz,
SSB mode, Lower local
−
13
16
−
13
15
dB
Saturated Output
Power 1
PO(sat) 1
fRFin = 0.8 GHz, fIFout = 130 MHz
PRFin = –10 dBm, Upper local
–11
–3
−
–7
+1
−
dBm
Saturated Output
Power 2
PO(sat) 2
fRFin = 2.0 GHz, fIFout = 250 MHz
PRFin = –10 dBm, Lower local
–11
–8
−
–7
–4
−
dBm
Data Sheet P12771EJ2V0DS00
5
µPC2757TB, µPC2758TB
STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified: TA = +25°C, VCC = VPS = 3.0 V, PLOin = –10 dBm, ZS = ZL = 50 Ω)
Reference Value
Parameter
6
Symbol
Conditions
Output 3rd Intercept Point
OIP3
LO Leakage at RF pin
Unit
µPC2757TB
µPC2758TB
fRFin = 0.8 to 2.0 GHz, fIFout = 0.1 GHz,
Cross point IP
+5
+11
dBm
LOrf
fLOin = 0.8 to 2.0 GHz
–35
–30
dBm
LO Leakage at IF pin
LOif
fLOin = 0.8 to 2.0 GHz
–23
–15
dBm
Power-saving Current
ICC(PS)
VPS = 0.5 V
0.1
0.1
µA
Data Sheet P12771EJ2V0DS00
µPC2757TB, µPC2758TB
TEST CIRCUIT
µPC2757TB, µPC2758TB
(Top View)
Signal Generator
POWER
SAVE
1 000 pF
50 Ω
3
LOinput
PS
4
2
GND
VCC
3 300 pF
5
3V
C3
1
RFinput IFoutput
C2
Signal Generator
1 000 pF
50 Ω
C1
6
3 300 pF
C4
50 Ω
Spectrum Analyzer
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
PS bias
C3
LO
input
C2
PS
GND
VCC
C4
→
Voltage supply
RF
input
C5
C1
Component List
IF
output
Notes 1. 35 × 42 × 0.4 mm double sided copper clad polyimide board.
No.
Value
2. Back side: GND pattern
C1 to 2
1 000 pF
3. Solder plated on pattern
C3 to 5
3 300 pF
4. °{: Through holes
APPLICATION
This IC is guaranteed on the test circuit constructed with 50 Ω equipment and transmission line.
This IC, however, does not have 50 Ω input/output impedance, but electrical characteristics such as conversion
gain and intermodulation distortion are described herein on these conditions without impedance matching. So, you
should understand that conversion gain and intermodulation distortion at input level will vary when you improve VS of
RF input with external circuit (50 Ω termination or impedance matching.)
Data Sheet P12771EJ2V0DS00
7
µPC2757TB, µPC2758TB
TYPICAL CHARACTERISTICS (TA = +25°°C, on Measurement Circuit)
− µPC2757TB −
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CONVERSION GAIN vs. RF INPUT FREQUENCY
20
9
Conversion Gain CG (dB)
Circuit Current ICC (mA)
no signals
8 VCC = VPS
7
6
5
4
3
2
1
0
0
1
2
3
4
Supply Voltage VCC (V)
5
6
14
13
12
11
10
9
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fIFout = 130 MHz
8
7
6
1.4
1.6
1.8
2.0
2.2
2.4
RF Input Frequency fRFin (GHz)
Conversion Gain CG (dB)
SSB Noise Figure SSB • NF (dB)
SSB NOISE FIGURE vs. RF INPUT FREQUENCY
15
18
16
14
12
10
VCC = VPS = 3.0 V
PRFin = –40 dBm
8 PLOin = –10 dBm
fIFout = 130 MHz
6
0
0.5
1.0
1.5
2.0
RF Input Frequency fRFin (GHz)
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
20
VCC = VPS = 3.0 V
PRFin = –40 dBm
18
PLOin = –10 dBm
fRFin = 800 MHz
16
14
12
10
8
6
2.6
20
20
15
10
5
–5
–50
8
VCC = VPS = 3.0 V
fRFin = 900 MHz
fLOin = 800 MHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Level PLOin (dBm)
0
100 200 300 400 500 600
IF Output Frequency fIFout (MHz)
700
CONVERSION GAIN vs. LO INPUT LEVEL
25
10
Conversion Gain CG (dB)
Conversion Gain CG (dB)
CONVERSION GAIN vs. LO INPUT LEVEL
25
0
2.5
15
10
5
VCC = VPS = 3.0 V
fRFin = 2.0 GHz
fLOin = 1.9 GHz
PRFin = –40 dBm
0
–5
–50
Data Sheet P12771EJ2V0DS00
–40
–30
–20
–10
0
LO Input Level PLOin (dBm)
10
µPC2757TB, µPC2758TB
–20
Pout
–30
–40
IM3
–50
–60
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
RF Input Level PRFin (dBm)
IF Output Level of Each Tone PIFout (dBm)
3rd Order Intemodulation Distortion IM3 (dBm)
IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL
20
fRFin = 800 MHz
10 fLOin = 930 MHz
PLOin = –10 dBm
0
VCC = VPS = 3.0 V
–10
LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY
–10
PLOin = –10 dBm
–15 VCC = VPS = 3.0 V
–20
–25
–30
–35
–40
–45
–50
–55
–60
0
0.5
1
1.5
2
LO Input Frequency fLOin (GHz)
2.5
LO Leakage at IF Pin LOif (dBm)
LO Leakage at RF Pin LOrf (dBm)
IF Output Level of Each Tone PIFout (dBm)
3rd Order Intemodulation Distortion IM3 (dBm)
− µPC2757TB −
IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL
20
fRFin = 2 GHz
10 fLOin = 1.75 GHz
PLOin = –10 dBm
0
VCC = VPS = 3.0 V
–10
–20
Pout
–30
–40
IM3
–50
–60
–70
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
RF Input Level PRFin (dBm)
LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY
–10
PLOin = –10 dBm
–15 VCC = VPS = 3.0 V
–20
–25
–30
–35
–40
–45
0
0.5
1
1.5
2
LO Input Frequency fLOin (GHz)
2.5
Remark The graphs indicate nominal characteristics.
Data Sheet P12771EJ2V0DS00
9
µPC2757TB, µPC2758TB
S-PARAMETERS
− µPC2757TB −
Calibrated on pin of DUT
S11
Z
REF 1.0 Units
1
200.0 mUnits/
56.422 Ω –275.59 Ω
hp
MARKER 1
500.0 MHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
104.03 Ω –413.42 Ω
hp
MARKER 1
500.0 MHz
1
1
2
2
5
RF PORT
VCC = VPS = 3.0V
1:500 MHz 56.422 Ω -j275.59 Ω
2:900 MHz 38.68 Ω -j152.71 Ω
3:1 500 MHz 31.699 Ω -j88.102 Ω
4:1 900 MHz 29.209 Ω -j65.926 Ω
5:2 500 MHz 29.209 Ω -j44.758 Ω
4
5
3
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 104.03 Ω -j413.42 Ω
2:900 MHz 74.82 Ω -j243.06 Ω
3:1 500 MHz 59.266 Ω -j154.98 Ω
4:1 900 MHz 51.227 Ω -j124.55 Ω
5:2 500 MHz 43.996 Ω -j95.117 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
90.969 Ω –243.41 Ω
hp
MARKER 1
500.0 MHz
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S11
Z
REF 1.0 Units
1
200.0 mUnits/
114.16 Ω –400.03 Ω
hp
MARKER 1
500.0 MHz
1
1
2
2
5
LO PORT
VCC = VPS = 3.0V
1:500 MHz 90.969 Ω -j243.41 Ω
2:900 MHz 67.828 Ω -j150.32 Ω
3:1 500 MHz 51.488 Ω -j97.273 Ω
4:1 900 MHz 44.621 Ω -j77.352 Ω
5:2 500 MHz 39.627 Ω -j56.738 Ω
4 3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
19.146 Ω 7.2041 Ω
hp
MARKER 1
130.0 MHz
5
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 114.16 Ω -j400.03 Ω
2:900 MHz 75.133 Ω -j242.73 Ω
3:1 500 MHz 53.516 Ω -j154.21 Ω
4:1 900 MHz 44.789 Ω -j124.74 Ω
5:2 500 MHz 37.004 Ω -j93.828 Ω
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
S22
Z
REF 1.0 Units
1
200.0 mUnits/
066.38 Ω –1.3174 kΩ
hp
MARKER 1
130.0 MHz
1
2
1
2
IF PORT
VCC = VPS = 3.0V
1:130 MHz 19.146 Ω -j7.2041 Ω
2:250 MHz 22.73 Ω -j12.909 Ω
10
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = 3.0V VPS = GND
1:130 MHz 66.38 Ω -j1.3174 kΩ
2:250 MHz 88.281 Ω -j725.41 Ω
Data Sheet P12771EJ2V0DS00
START 0.050000000 GHz
STOP 3.000000000 GHz
µPC2757TB, µPC2758TB
TYPICAL CHARACTERISTICS (TA = +25°°C, on Measurement Circuit)
− µPC2758TB −
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Conversion Gain CG (dB)
no signals
VCC = VPS
15
10
5
0
SSB Noise Figure SSB • NF (dB)
CONVERSION GAIN vs. RF INPUT FREQUENCY
0
1
2
3
4
Supply Voltage VCC (V)
5
SSB NOISE FIGURE vs. RF INPUT FREQUENCY
20
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fIFout = 130 MHz
15
10
24 VCC = VPS = 3.0 V
PRFin = –40 dBm
22 PLOin = –10 dBm
fIFout = 130 MHz
20
18
16
14
12
10
6
0.5
1.0
1.5
2.0
2.5
RF Input Frequency fRFin (GHz)
0.5
1.0
1.5
2.0
2.5
RF Input Frequency fRFin (GHz)
18
17
16
15
14
13
VCC = VPS = 3.0 V
PRFin = –40 dBm
PLOin = –10 dBm
fRFin = 800 MHz
12
10
3.0
CONVERSION GAIN vs. LO INPUT LEVEL
20
20
15
10
5
VCC = VPS = 3.0 V
fRFin = 800 MHz
fLOin = 930 MHz
PRFin = –40 dBm
–40
–30
–20
–10
0
LO Input Level PLOin (dBm)
10
Conversion Gain CG (dB)
25
–5
–50
0
100
200
300
400
500
IF Output Frequency fIFout (MHz)
600
CONVERSION GAIN vs. LO INPUT LEVEL
25
0
3.0
19
11
5
0.0
Conversion Gain CG (dB)
0
CONVERSION GAIN vs. IF OUTPUT FREQUENCY
20
Conversion Gain CG (dB)
Circuit Current ICC (mA)
20
15
10
5
VCC = VPS = 3.0 V
fRFin = 2.0 GHz
fLOin = 1.9 GHz
PRFin = –40 dBm
0
–5
–50
Data Sheet P12771EJ2V0DS00
–40
–30
–20
–10
0
LO Input Level PLOin (dBm)
10
11
µPC2757TB, µPC2758TB
IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL
20
10
0
–10
–20
–30
–40
fRF1 = 800 MHz
fRF2 = 805 MHz
fLO = 900 MHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–50
–60
–70
–80
–50
–40
–30
–20
–10
0
RF Input Level PRFin (dBm)
10
IF Output Level of Each Tone PIFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
IF Output Level of Each Tone PIFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
− µPC2758TB −
–10
–20
–30
–40
–50
–60
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
3.0
10
0
–10
–20
–30
–40
–60
–70
–80
–50
–40
–30
–20
–10
0
RF Input Level PRFin (dBm)
10
–10
–20
–30
–40
–50
–60
PLOin = –10 dBm
VCC = VPS = 3.0 V
0
Remark The graphs indicate nominal characteristics.
12
fRF1 = 2.0 GHz
fRF2 = 2.005 GHz
fLO = 1.9 GHz
PLOin = –10 dBm
VCC = VPS = 3.0 V
–50
LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY
0
LO Leakage at IF Pin LOif (dBm)
LO Leakage at RF Pin LOrf (dBm)
LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY
0
IF OUTPUT LEVEL, 3rd ORDER INTERMODULATION
DISTORTION vs. RF INPUT LEVEL
20
Data Sheet P12771EJ2V0DS00
0.5
1.0
1.5
2.0
2.5
LO Input Frequency fLOin (GHz)
3.0
µPC2757TB, µPC2758TB
S-PARAMETERS
− µPC2758TB −
Calibrated on pin of DUT
Z
S11
REF 1.0 Units
1
200.0 mUnits/
63.312 Ω –261.34 Ω
hp
MARKER 1
500.0 MHz
Z
S11
REF 1.0 Units
1
200.0 mUnits/
107.13 Ω –395.56 Ω
hp
MARKER 1
500.0 MHz
1
1
2
5
RF PORT
VCC = VPS = 3.0V
1:500 MHz 63.312 Ω -j261.34 Ω
2:900 MHz 40.227 Ω -j142.36 Ω
3:1 500 MHz 32.441 Ω -j79.68 Ω
4:1 900 MHz 31.107 Ω -j58.273 Ω
5:2 500 MHz 30.871 Ω -j39.08 Ω
2
4
5
3
RF PORT
VCC = 3.0V VPS = GND
1:500 MHz 107.13 Ω -j395.56 Ω
2:900 MHz 78.711 Ω -j234.41 Ω
3:1 500 MHz 61.922 Ω -j148.82 Ω
4:1 900 MHz 52.629 Ω -j119.55 Ω
5:2 500 MHz 44.766 Ω -j90.578 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S11
REF 1.0 Units
1
200.0 mUnits/
73.398 Ω –188.13 Ω
hp
MARKER 1
500.0 MHz
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S11
REF 1.0 Units
1
200.0 mUnits/
100.31 Ω –374.75 Ω
hp
MARKER 1
500.0 MHz
1
1
5
2
4 3
2
5
LO PORT
VCC = VPS = 3.0V
1:500 MHz 73.398 Ω -j188.13 Ω
2:900 MHz 64.551 Ω -j112.66 Ω
3:1 500 MHz 53.133 Ω -j72.941 Ω
4:1 900 MHz 48.111 Ω -j57.307 Ω
5:2 500 MHz 44.541 Ω -j41.564 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S22
REF 1.0 Units
1
200.0 mUnits/
15.696 Ω 9.5011 Ω
hp
MARKER 1
130.0 MHz
LO PORT
VCC = 3.0V VPS = GND
1:500 MHz 100.31 Ω -j374.75 Ω
2:900 MHz 73.148 Ω -j223.07 Ω
3:1 500 MHz 57.719 Ω -j144.02 Ω
4:1 900 MHz 50.738 Ω -j119.52 Ω
5:2 500 MHz 41.836 Ω -j90.25 Ω
4
3
START 0.050000000 GHz
STOP 3.000000000 GHz
Z
S22
REF 1.0 Units
1
200.0 mUnits/
106.69 Ω –1.3425 kΩ
hp
MARKER 1
130.0 MHz
1
2
1
2
IF PORT
VCC = VPS = 3.0V
1:130 MHz 15.696 Ω -j9.5811 Ω
2:250 MHz 21.4 Ω -j16.331 Ω
START 0.050000000 GHz
STOP 3.000000000 GHz
IF PORT
VCC = 3.0V VPS = GND
1:130 MHz 106.69 Ω -j1.3425 kΩ
2:250 MHz 83.75 Ω -j711.47 Ω
Data Sheet P12771EJ2V0DS00
START 0.050000000 GHz
STOP 3.000000000 GHz
13
µPC2757TB, µPC2758TB
PACKAGE DIMENSIONS
6-pin super minimold (Unit: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
14
Data Sheet P12771EJ2V0DS00
0.15+0.1
–0
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPC2757TB, µPC2758TB
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3)ý Connect a bypass capacitor (e.g. 1 000 pF) to the VCC pin.
(4)ý The DC cut capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition
Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12771EJ2V0DS00
15
µPC2757TB, µPC2758TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is current as of June, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4