SD200N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 200 A FEATURES • Wide current range • High voltage ratings up to 2400 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version • Standard JEDEC types • Compression bonded encapsulations DO-205AC (DO-30) • RoHS complaint • Lead (Pb)-free • Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY • Converters IF(AV) • Power supplies 200 A • Machine tool controls • High power drives • Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER SD200N/R TEST CONDITIONS IF(AV) 1600 to 2000 TC IF(RMS) 2400 UNITS 200 A 110 °C 314 IFSM I2 t VRRM 50 Hz 4700 60 Hz 4920 50 Hz 110 60 Hz 101 Range TJ A kA2s 1600 to 2000 2400 V - 40 to 180 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 20 2000 2100 24 2400 2500 SD200N/R Document Number: 93541 Revision: 17-Apr-08 For technical questions, contact: [email protected] IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 15 www.vishay.com 1 SD200N/R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 200 A FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IF(RMS) IFSM I2√t 110 °C 220 A 100 °C 314 4700 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 4920 Sinusoidal half wave, initial TJ = TJ maximum 4140 110 101 71 t = 0.1 to 10 ms, no voltage reapplied 1100 VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.90 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.00 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.79 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.64 Ipk = 630 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.40 VFM kA2s 78 Low level value of threshold voltage Maximum forward voltage drop A 3950 100 % VRRM reapplied t = 8.3 ms Maximum I2√t for fusing A t = 10 ms t = 10 ms I2t UNITS 200 DC at 95 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES kA2√s V mΩ V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range SYMBOL TJ Maximum storage temperature range TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthCS Maximum allowed mounting torque ± 10 % TEST CONDITIONS www.vishay.com 2 1600 to 2000 2400 - 40 to 180 - 40 to 150 UNITS °C - 55 to 200 DC operation 0.23 K/W Mounting surface, smooth, flat and greased Not-lubricated threads Approximate weight Case style SD200N/R See dimensions (link at the end of datasheet) For technical questions, contact: [email protected] 0.08 14 Nm 120 g DO-205AC (DO-30) Document Number: 93541 Revision: 17-Apr-08 SD200N/R Series Standard Recovery Diodes Vishay High Power Products (Stud Version), 200 A ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS 180° 0.041 0.030 120° 0.049 0.051 90° 0.063 0.068 60° 0.093 0.096 30° 0.156 0.157 UNITS TJ = TJ maximum K/W 180 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC SD200N/ R Series RthJC (DC) = 0.23 K/ W 170 160 150 Conduction Angle 140 130 120 110 30° 60° 90° 120° 180° 100 0 40 80 120 160 200 240 300 150 140 Conduction Period 130 120 110 90° 60° 100 120° 30° 180° DC 90 0 50 100 150 200 250 300 350 0. 3 K/ 0.4 W K/ W W K/ 0.6 K/W 0.8 K/W RMS Limit 150 aR elt -D 200 160 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 250 SD200N/ R Series RthJC (DC) = 0.23 K/ W 170 .08 =0 A hS Rt /W 2K 0.1 W K/ 2 0. Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics 180 Conduction Angle 1.4 K /W 100 SD200N/R Series Tj = Tj max 50 1.8 K/W 0 0 50 100 150 200 Average Forward Current (A) 250 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93541 Revision: 17-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 SD200N/R Series Vishay High Power Products Standard Recovery Diodes 400 DC 180° 120° 90° 60° 30° 350 300 0.2 K/ W 0.3 K/ W 0.4 K/W 0.6 K/W RMS Limit Conduction Period 150 100 SD200N/R Series Tj = Tj max 50 R 200 ta el -D 250 W K/ 08 0. = A W hS K/ Rt 12 0. Maximum Average Forward Power Loss (W) (Stud Version), 200 A 0.8 K/W 1.4 K /W 1.8 K/W 0 0 50 100 150 200 250 300 350 40 60 80 100 120 140 160 180 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) 4500 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 4 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4000 3500 3000 2500 2000 1500 SD200N/R Series 1000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 5000 4500 4000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = Tj max No Voltage Reapplied Rated Vrrm Reapplied 3500 3000 2500 2000 1500 SD200N/R Series 1000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 10000 SD200N/R Series 1000 Tj = 25 °C Tj = Tj max 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93541 Revision: 17-Apr-08 SD200N/R Series Transient Thermal Impedanc e Z thJC (K/ W) Standard Recovery Diodes Vishay High Power Products (Stud Version), 200 A 1 Steady State Value: R thJC = 0.23 K/ W (DC Operation) 0.1 SD200N/ R Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE Device code SD 20 0 N 24 P C 1 2 3 4 5 6 7 1 - Diode 2 - Essential part number 3 - 0 = Standard recovery 4 - N = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A 7 - M = Stud base DO-205AC (DO-30) M12 x 1.75 C = Ceramic housing For metric device M12 x 1.75 contact factory LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93541 Revision: 17-Apr-08 http://www.vishay.com/doc?95302 For technical questions, contact: [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-205AC (DO-30) DIMENSIONS in millimeters (inches) 16.5 (0.65) MAX. Ceramic housing 2.6 (0.10) MAX. 35 (1.38) MAX. 6.5 (0.26) MIN. DIA. 8.5 (0.33) NOM. C.S. 16 mm2 (0.015 s.i.) 157 (6.18) 170 (6.69) DIA. 22.5 (0.88) MAX. 55 (2.16) MIN. SW 27 12.5 (0.49) MAX. 21 (0.82) MAX. 1/2"-20UNF-2A* *For metric device: M12 x 1.75 contact factory Document Number: 95302 Revision: 11-Apr-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000