NEC UPC2776

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2776TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has
impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super
minimold package which is smaller than conventional minimold.
The µPC2776TB has compatible pin connections and performance to the µPC2776T of conventional minimold
version. So, in the case of reducing your system size, the µPC2776TB is suitable to replace from the µPC2776T.
These IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• High-density surface mounting: 6-pin super minimold package
• Wideband response
: fu = 2.7 GHzTYP. @ 3 dB bandwidth
• Medium output power
: Po (1 dB) = +6.5 dBm @ f = 1 GHz with external inductor
• Supply voltage
: VCC = 4.5 to 5.5 V
• Power gain
: GP = 23 dBTYP. @ f = 1 GHz
• Port impedance
: input/output 50 Ω
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
PART NUMBER
µPC2776TB-E3
PACKAGE
6-pin super minimold
MARKING
C2L
SUPPLYING FORM
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
Remarks To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order: µPC2776TB)
Caution: Electro-static sensitive devices
Document No. P12680EJ2V0DS00 (2nd edition)
Date Published February 1998 N CP(K)
Printed in Japan
©
1997
µPC2776TB
PIN CONNECTIONS
Pin NO.
3
2
1
Pin name
(Bottom View)
C2L
(Top View)
4
4
3
5
5
2
6
6
1
1
INPUT
2
GND
3
GND
4
OUTPUT
5
GND
6
VCC
PRODUCT LINE-UP OF µPC2776 (TA = +25 °C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω)
PART NO.
µPC2776T
fu
(GHz)
PO (1dB)
(dBm)
PO (sat)
(dBm)
GP
(dB)
NF
(dB)
ICC
(mA)
+6.5
+8.5
23
6
25
PACKAGE
MARKING
6-pin minimold
2.7
µPC2776TB
C2L
6-pin super minimold
Remarks Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Notice The package size distinguishes between minimold and super minimold.
Selection point among product line-up
µPC2709TB: Suits to 1 GHz 2.5 GHz operation due to small inductance (e.g. 10 nH) between VCC and output pin.
µPC2776TB: Suits to HF to 2.0 GHz operation due to large inductance (e.g. 100 nH) between VCC and output pin.
PIN FUNCTIONS
PIN.
SYMBOL
APPLIED
VOLTAGE
(V)
1
INPUT
−
DESCRIPTION
High-frequency signal input pin. A internal matching circuit, configured with
resistors, enables 50 Ω connection over
a wide band. A multi-feedback circuit is
designed to cancel the deviations of hFE
and resistance.
2
3
5
GND
0
Ground pin. Form a ground pattern as
wide as possible to maintain the minimum ground impedance.
4
OUTPUT
4.5 to 5.5
High-frequency signal output pin.
Connect an inductor between this pin
and VCC to supply current to the internal
output transistors.
6
VCC
Power supply pin, which biases the internal input transistor.
Excellent RF characteristics are obtained by a two-stage amplifier circuit.
To know the associated products, please refer to each latest data sheet.
2
EQUIVALENT CIRCUIT
6
4
1
3
2
5
µPC2776TB
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
CONDITION
RATINGS
UNIT
Supply voltage
VCC
TA = +25 °C
6
V
Total circuit current
ICC
TA = +25 °C
60
mA
Power dissipation
PD
Mounted on 50 × 50 × 1.6 mm epoxy glass
PWB (TA = +85 °C)
200
mW
Operating ambient temperature
TA
−40 to +85
°C
TSTG
−55 to +150
°C
Storage temperature
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTICE
Supply Voltage
VCC
4.5
5.0
5.5
V
The same voltage should be applied to pin 4 and 6 pin.
Operating Ambient Temperature
TA
−40
+25
+85
°C
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Circuit current
ICC
No signals
18
25
33
mA
Power gain
GP
f = 1 GHz
21
23
26
dB
PO (1dB)
f = 1 GHz
+4.0
+6.5
−
dBm
NF
f = 1 GHz
−
6.0
7.5
dB
3 dB down below from gain at
f = 100 MHz
2.3
2.7
−
GHz
Output 1 dB compression level
Noise figure
Upper limit operating frequency
fu
Isolation
ISL
f = 1 GHz
27
32
−
dB
Input return loss
RLin
f = 1 GHz
4.5
7.5
−
dB
Output return loss
RLout
f = 1 GHz
15
20
−
dB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, VCC = Vout = 5.0 V, ZL = ZS = 50 Ω)
PARAMETER
Gain flatness
Saturated output power
3rd order intermodulation distortion
SYMBOL
∆GP
PO(sat)
IM3
TEST CONDITION
REFERENCE
UNIT
±1
dB
f = 1 GHz
+8.5
dBm
PO(each) = + 0 dBm,
f1 = 1000 MHz, f2 = 1002 MHz
−30
dBc
f = 0.1 to 2.0 GHz
3
µPC2776TB
TEST CIRCUIT
VCC
1 000 pF
C3
L
6
50 Ω
C1
IN
C2
4
1
1 000 pF
50 Ω
OUT
1 000 pF
2, 3, 5
Components of test circuit for
measuring electrical characteristics
TYPE
VALUE
C3
Capacitor
1 000 pF
L
Bias Tee
1 000 nH
C1 to C2
Bias Tee
1 000 pF
Example of actural application components
TYPE
VALUE
OPERATING FREQUENCY
C1 to C3
Chip capacitor
1 000 pF
100 MHz or higher
L
Chip inductor
100 nH
100 MHz or higher
10 nH
1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT, AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2πRfc).
4
µPC2776TB
Illustration of the application circuit assembled on evaluation board
AMP-2
2
3
Top View
2L
1
IN
OUT
C
C
C
6
5
4
L
Mounting direction
VCC
C
Component List
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
Value
C
1 000 pF
L
100 nH, etc
2. Back side: GND pattern
3. Solder plated on pattern
4.
: Through holes
5
µPC2776TB
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
VCC = 5.0 V
35
35
30
30
Circuit Current - ICC (mA)
Circuit Current - ICC (mA)
No Signals
25
20
15
10
25
20
15
10
5
5
0
0
1
4
3
2
Supply Voltage - VCC (V)
5
0
+20 +40 +60 +80 +100
–60 –40 –20
0
Operating Ambient Temperature - TA (°C)
6
POWER GAIN vs. FREQUENCY
NOISE FIGURE, POWER GAIN vs. FREQUENCY
25
8
20
30
GP
Power Gain - GP (dB)
Noise Figure - NF (dB)
VCC = 5.5 V
7
VCC = 5.0 V
25
Power Gain - GP (dB)
9
VCC = 4.5 V
15
NF
VCC = 5.5 V
VCC = 5.0 V
TA = +25 °C
TA = –40 °C
TA = +85 °C
20
15
10
6
VCC = 5.0 V
VCC = 4.5 V
5
0.1
5
1.0
0.3
Frequency - f (GHz)
10
0.1
3.0
3.0
INPUT RETURN LOSS, OUTPUT RETURN LOSS
vs. FREQUENCY
0
VCC = 5.0 V
ISOLATION vs. FREQUENCY
0
1.0
0.3
Frequency - f (GHz)
VCC = 5.0 V
Input Return Loss - RLin (dB)
Output Return Loss - RLout (dB)
RLin
Isolation - ISL (dB)
–10
–20
–30
–40
–50
0.1
6
0.3
1.0
Frequency - f (GHz)
3.0
–10
–20
RLout
–30
–40
–50
0.1
0.3
1.0
Frequency - f (GHz)
3.0
µPC2776TB
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. INPUT POWER
+15
+15
f = 1.0 GHz
VCC = 5.0 V
+10
Output Power - Pout (dBm)
Output Power - Pout (dBm)
+5
VCC = 4.5 V
–5
–10
–20
–35 –30 –25 –20 –15 –10 –5
0
Input Power - Pin (dBm)
+5
0
–10
–20
0
–35 –30 –25 –20 –15 –10 –5
Input Power - Pin (dBm)
+5 +10
+15
VCC = 5.0 V
f = 2.0 GHz
+10
VCC = 5.0 V
f = 1.0 GHz
VCC = 5.5 V
Output Power - Pout (dBm)
Output Power - Pout (dBm)
+10
+5
0
–5
VCC = 4.5 V
–10
–15
+5
0
f = 2.0 GHz
–5
–10
–15
–20
–35 –30 –25 –20 –15 –10 –5
0
Input Power - Pin (dBm)
–20
–35 –30 –25 –20 –15 –10 –5
0
Input Power - Pin (dBm)
+5 +10
SATURATED OUTPUT POWER vs. FREQUENCY
3rd Order Intermodulation Distortion - IM3 (dBc)
20
Saturated Output Power - PO (sat) (dBm)
+5 +10
OUTPUT POWER vs. INPUT POWER
+15
18
16
14
VCC = 5.0 V
VCC = 5.5 V
10
8
6
4
0
0.1
TA = –40 °C
–5
OUTPUT POWER vs. INPUT POWER
2
TA = +85 °C
–15
–15
12
VCC = 5.0 V
f = 1.0 GHz
TA = +25 °C
VCC = 5.5 V
0
+10
VCC = 4.5 V
1.0
0.3
Frequency - f (GHz)
3.0
+5 +10
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–60
f1 = 1000 MHz
f2 = 1002 MHz
–50
VCC = 5.5 V
–40
VCC = 5.0 V
–30
VCC = 4.5 V
–20
–10
–10 –8 –6 –4 –2 0 +2 +4 +6 +8 +10
Output Power of Each Tone - PO (each) (dBm)
7
µPC2776TB
S-Parameter (VCC = Vout = 5.0 V)
S11- FREQUENCY
0.1 G
1.0 G
3.0 G
2.0 G
S22- FREQUENCY
3.0 G
1.0 G
0.1 G
2.0 G
8
µPC2776TB
Typical S-Parameter Values (TA = +25 °C)
µPC2776TB
VCC = Vout = 5.0 V, ICC = 27 mA
FREQUENCY
MHz
MAG
S11
ANG
MAG
S21
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
.226
.240
.254
.267
.285
.308
.345
.386
.425
.449
.466
.478
.507
.533
.564
.568
.576
.571
.570
.569
.564
.548
.535
.516
.515
.508
.503
.489
.471
.457
.455
2.8
6.4
10.4
11.4
11.1
8.5
6.1
3.9
1.4
–1.5
–6.1
–12.0
–17.7
–24.7
–30.3
–36.4
–42.0
–48.5
–54.5
–59.7
–64.2
–69.6
–75.5
–81.8
–87.0
–90.9
–94.8
–97.6
–101.3
–106.7
–111.3
13.844
13.862
13.942
14.123
14.267
14.423
14.670
14.864
15.210
15.455
15.564
15.550
15.622
15.577
15.527
15.285
14.960
14.570
14.026
13.715
13.283
12.926
12.515
12.093
11.498
11.136
10.511
10.126
9.850
9.242
9.065
S12
S22
K
ANG
MAG
ANG
MAG
ANG
–5.9
–12.5
–18.6
–25.2
–31.8
–38.6
–45.5
–52.8
–60.1
–68.4
–76.6
–84.9
–93.1
–101.3
–110.6
–119.0
–127.8
–136.4
–144.7
–151.7
–159.8
–167.5
–174.8
177.9
170.1
163.1
156.6
148.3
143.2
135.5
128.9
.029
.029
.028
.029
.029
.029
.030
.030
.031
.030
.030
.030
.030
.029
.029
.027
.026
.024
.023
.022
.020
.018
.018
.016
.017
.015
.015
.018
.019
.022
.026
–1.5
0.3
3.2
4.8
7.2
9.3
10.7
11.0
11.9
11.8
10.6
11.7
13.4
13.2
13.5
11.3
12.6
14.8
15.8
18.2
23.5
27.1
36.3
41.9
53.3
64.3
67.9
85.0
93.7
100.0
108.0
.032
.024
.030
.031
.037
.038
.040
.043
.055
.072
.084
.093
.094
.114
.130
.154
.167
.179
.194
.212
.228
.240
.251
.268
.279
.296
.306
.315
.330
.343
.357
–177.4
–171.9
–176.3
–167.6
–167.3
–159.3
–160.7
–161.9
–169.0
–169.1
–169.1
–173.6
177.9
167.0
164.1
158.0
152.6
143.0
135.2
128.1
121.6
115.9
108.1
102.4
96.0
90.8
86.7
79.2
73.0
67.0
60.7
1.39
1.39
1.40
1.36
1.33
1.28
1.22
1.18
1.12
1.10
1.08
1.07
1.05
1.05
1.02
1.07
1.09
1.18
1.27
1.35
1.48
1.66
1.75
2.01
1.99
2.22
2.29
2.00
1.96
1.81
1.53
9
µPC2776TB
PACKAGE DIMENSIONS
6 pin super minimold (unit: mm)
0.15 +0.1
–0
0.1 MIN.
1.25±0.1
2.1±0.1
0.2 +0.1
–0
0 to 0.1
0.65
0.65
1.3
0.7
0.9±0.1
2.0±0.2
10
µPC2776TB
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor (e.g. 1 000 pF) should be attached to VCC pin.
(4) The inductor must be attached between VCC and output pin (e.g. 100 nH)
(5) The DC cut capacitor must be each attached to the input and output pins.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
µPC2776TB
Soldering method
Soldering conditions
Recommended condition symbol
Infrared ray reflow
Package peak temperature: 235 °C, Hour: within 30 s.
Note
(more than 210 °C), Time: 3 times, Limited days: no.
IR35-00-3
VPS
Package peak temperature: 215 °C, Hour: within 40 s.
Note
(more than 200 °C), Time: 3 times, Limited days: no.
VP15-00-3
Wave soldering
Soldering tub temperature: less than 260 °C, Hour: within 10 s.
Note
Time: 1 time, Limited days: no.
WS60-00-1
Pin part heating
Pin area temperature: less than 300 °C, Hour: within 3 s/pin.
Note
Limited days: no.
Note It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.
Caution The combined use of soldering method is to be avoided (However, except the pin area heating
method).
For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
11
µPC2776TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.