DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8106TB, µPC8109TB SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB features low current consumption. From these two version, you can chose either IC corresponding to your system design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process. This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz • Supply voltage : VCC = 2.7 to 5.5 V • High-density surface mounting : 6-pin super minimold package • Low current consumption : ICC = 9 mA TYP. @ µPC8106TB ICC = 5 mA TYP. @ µPC8109TB • Minimized carrier leakage : Due to double balanced mixer • Built-in power save function APPLICATION • Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on) ORDERING INFORMATION Part Number Markings Product Type µPC8106TB-E3 C2D High IP3 µPC8109TB-E3 C2G Low current consumption Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide. Pin 1, 2, 3 face to tape perforation side. QTY 3 kp/Reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8106TB, µPC8109TB) Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P12770EJ2V0DS00 (2nd edition) Date Published April 1999 N CP(K) Printed in Japan © 1997, 1999 µPC8106TB, µPC8109TB PIN CONNECTIONS C2D (Top view) 3 2 1 (Bottom view) Pin No. 4 4 3 5 5 2 6 6 1 Marking is an example of µ PC8106TB. Pin Name 1 IFinput 2 GND 3 LOinput 4 PS 5 VCC 6 RFoutput SERIES PRODUCTS (TA = +25 °C, VCC = VPS = VRFout = 3.0 V, ZL = ZS = 50 Ω) PRODUCT NAME VCC (V) ICC (mA) CG1 (dB) CG2 (dB) PO(sat)1 (dBm) PO(sat)2 (dBm) OIP31 (dBm) OIP32 (dBm) High IP3 µPC8106TB 2.7 to 5.5 9 9 7 −2 −4 +5.5 +2.0 Low power consumption µPC8109TB 2.7 to 5.5 5 6 4 −5.5 −7.5 +1.5 −1.0 Higher IP3 µ PC8163TB 2.7 to 3.3 16.5 9 5.5 0.5 –2 +9.5 +6 TYPE Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for the test conditions. BLOCK DIAGRAM (FOR THE µPC8106TB AND µPC8109TB) (Top view) 2 LO input PS GND VCC IF input RF output Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS) PHS, DECT DEMO. RX VCO ÷N I Q PLL SW PLL I 0° Phase shifter 90° TX PA µ PC8106TB Q Analog cellular telephone FM DEMO. RX VCO ÷N PLL SW PLL TX PA MOD. µPC8109TB Data Sheet P12770EJ2V0DS00 3 µPC8106TB, µPC8109TB PIN FUNCTIONS (FOR THE µPC8106TB AND µPC8109TB) Pin No. Pin Name Applied Voltage (V) Pin Voltage Note (V) 1 IFinput − 1.3 2 3 5 6 4 GND LOinput 0 − − 2.4 Function and Explanation This pin is IF input to double balanced mixer (DBM). The input is designed as high impedance. The circuit contributes to suppress spurious signal. Also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. For above reason, double balanced mixer is adopted. Supply voltage pin. RFoutput Same bias as VCC through external inductor − This pin is RF output from DBM. This pin is designed as open collector. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. − Power save control pin. Bias controls operation as follows. VCC/GND 6 3 1 Local input pin. Recommendable input level is −10 to 0 dBm. − PS 5 GND pin. Ground pattern on the board should be formed as wide as possible. Track Length should be kept as short as possible to minimize ground impedance. 2.7 to 5.5 VCC Equivalent Circuit Pin bias Control VCC Operation GND Power Save 2 VCC 4 GND Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V. 4 Data Sheet P12770EJ2V0DS00 5 2 µPC8106TB, µPC8109TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Rating Unit Supply Votage VCC TA = +25 °C, Pin 5 and 6 6.0 V PS pin Input Voltage VPS TA = +25 °C 6.0 V Power Dissipation of Package PD Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB TA = +85 °C 200 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Maximum Input Power Pin +10 dBm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Note Supply Voltage VCC 2.7 3.0 5.5 V The same voltage should be supplied to pin 5 and 6 Operating Ambient Temperature TA −40 +25 +85 °C Local Input Level PLOin −10 −5 0 dBm ZS = 50 Ω (without matching) RF Output Frequency fRFout 0.4 − 2.0 GHz With external matching circuit fIFin 100 − 400 MHz IF Input Frequency ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified) µPC8106TB Parameter Circuit Current Circuit Current in Powersave Mode Symbol µPC8109TB Conditions Unit MIN. TYP. MAX. MIN. TYP. MAX. ICC No signal 4.5 9 13.5 2.5 5 8.0 mA ICC(PS) VPS = 0 V − − 10 − − 10 µA Conversion Gain 1 CG1 fRFout = 0.9 GHz, PIFin = −30 dBm 6 9 12 3 6 9 dB Conversion Gain 2 CG2 fRFout = 1.9 GHz, PIFin = −30 dBm 4 7 10 1 4 7 dB Maximum RF Output Power 1 PO(sat)1 fRFout = 0.9 GHz, PIFin = 0 dBm −4 −2 − −7.5 −5.5 − dBm Maximum RF Output Power 2 PO(sat)2 fRFout = 1.9 GHz, PIFin = 0 dBm −6.5 −4 − −10 −7.5 − dBm Data Sheet P12770EJ2V0DS00 5 µPC8106TB, µPC8109TB OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY (TA = +25 °C, VCC = VRFout = 3.0 V, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise mentioned) Reference Value Parameter Symbol Conditions µPC8106TB µPC8109TB Unit Output Third-Order Distortion Intercept Point OIP31 fIFin1 = 240.0 MHz fRFout = 0.9 GHz +5.5 +1.5 OIP32 fIFin2 = 240.4 MHz fRFout = 1.9 GHz +2.0 −1.0 Third-Order Intermodulation Distortion 1 IM31 fRFout = 0.9 GHz −31 −29 dBc Third-Order Intermodulation Distortion 2 IM32 fIFint = 240.0 MHz fIFin2 = 240.4 MHz PIFin = −20 dBm fRFout = 1.9 GHz −30 −28 dBc SSB Noise Figure Power Save Response Time dBm SSBNF fRFout = 0.9 GHz, fIFin = 240 MHz 8.5 8.5 dB Rise time TPS(rise) VPS: GND → VCC 2.0 2.0 µs Fall time TPS(fall) VPS: VCC → GND 2.0 2.0 µs APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY (TA = +25 °C, VCC = VPS = VRFout = 3.0 V, fIFin = 130 MHz, fLOin = 1630 MHz, PLOin = −5 dBm) Reference Value Parameter Conversion Gain Maximum RF Output Power 6 Symbol Conditions µPC8106TB Unit CG fRFout = 1.5 GHz, with application circuit example 7 dB PO(sat) fRFout = 1.5 GHz, with application circuit example −3.5 dBm Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TEST CIRCUIT 1 (RF = 900 MHz, for the µPC8106TB and µPC8109TB) RF = 900 MHz, matched Signal Generator Spectrum Analyzer 1 000 pF 1 pF 50 Ω C4 10 000 pF RFoutput L C5 C6 6 6.8 nH 5 * C3 VCC IFinput GND VCC 4 PS LOinput 1 100 pF 50 Ω C1 2 Signal Generator 3 100 pF 1 000 pF 50 Ω C2 PLoin = –5 dBm * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD RFOUT RF Connector → IFIN 1 pF C5 1 000 pF 100 pF C6 C3 C1 6.8 nH 1 000 pF 1 L 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 Data Sheet P12770EJ2V0DS00 10 000 pF 7 µPC8106TB, µPC8109TB COMPONENT LIST Form Symbol Value C1, C2 100 pF C3, C6 1 000 pF C5 1 pF Through capacitor C4 10 000 pF Chip inductor L 6.8 nH Chip capacitor Note 6.8 nH: Murata Mfg. Co., Ltd. Note LQP31A6N8J04 Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes 5. C6 is for RF short on the board pattern 8 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TEST CIRCUIT 2 (RF = 1.9 GHz, for the µPC8106TB and µPC8109TB) RF = 1.9 GHz, matched Signal Generator Spectrum Analyzer 1 000 pF 50 Ω C4 Strip line 2.5 pF C6 C5 RFoutput 100 nH 5 10 000 pF VCC 6 L * GND VCC 4 C3 1 000 pF IFinput PS LOinput 1 100 pF 50 Ω C1 2 Signal Generator 3 100 pF 50 Ω C2 PLoin = –5 dBm * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD RFOUT 2 pF RF Connector → IFIN C5 0.5 pF 100 pF C1 C6 1 000 pF C3 1 000 pF 1 100 nH 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 Data Sheet P12770EJ2V0DS00 10 000 pF 9 µPC8106TB, µPC8109TB COMPONENT LIST Form Symbol Value C1, C2 100 pF C3, C6 1 000 pF C5 2.5 pF (2.0 pF, 0.5 pF parallel) Through capacitor C4 10 000 pF Chip inductor L 100 nH Chip capacitor Note 100 nH: Murata Mfg. Co., Ltd. Note LQN1AR10J(K)04 Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. 10 : Through holes Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB APPLICATION CIRCUIT EXAMPLE (RF = 1.5 GHz, for the µPC8106TB and µPC8109TB) RF = 1.5 GHz, matched Signal Generator Spectrum Analyzer 6 pF 50 Ω C4 2.7 nH L2 3.5 pF C6 C5 10 000 pF VCC 6 L1 150 nH 5 * 4 C3 1 000 pF RFoutput IFinput GND VCC LOinput PS 1 100 pF 50 Ω C1 2 Signal Generator 3 100 pF 50 Ω C2 PLoin = –5 dBm * In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching circuit. EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD RFOUT 3 pF RF Connector → IFIN C5 L2 0.5 pF 2.7 nH 100 pF C1 C6 6 pF C3 1 000 pF L1 1 150 nH 1 000 pF P/S 100 pF µPC8106TB C2 LOIN C4 Data Sheet P12770EJ2V0DS00 10 000 pF 11 µPC8106TB, µPC8109TB COMPONENT LIST Form Symbol Value C1, C2 100 pF C3 1 000 pF C5 3.5 pF (3.0 pF, 0.5 pF parallel) C6 6 pF Through capacitor C4 10 000 pF Chip inductor L1 150 nH L2 2.7 nH Chip capacitor Notes 1. 150 nH: TOKO Co., Ltd. 2. 2.7 nH : TOKO Co., Ltd. Note 1 Note 2 LL2012-FR15 LL2012-F2N7S Notes on the board 1. 35 × 42 × 0.4 mm polyimide board, 35 µm double-sided copper clad 2. Ground pattern on rear of the board 3. Solder plated patterns 4. : Through holes NOTICE The test circuits and board pattern on data sheet are for performance evaluation use only. (They are not recommended circuits.) In the case of actual design-in, matching circuit should be determined using S parameter of desired frequency in accordance to actual mounting pattern. For external circuits of the ICs, following Application Note is also available. • µPC8106, µPC8109 Application Note (Document No. P13683E) 12 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = VRFout) with TEST CIRCUIT 1 or 2, according to the operating frequency, unless otherwise specified CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( µ PC8106TB) CIRCUIT CURRENT vs. SUPPLY VOLTAGE ( µ PC8109TB) 14 10 Circuit Current ICC (mA) Circuit Current ICC (mA) 12 10 8 6 4 2 0 0 1 2 3 4 6 4 2 No signal VCC = VPS No signal VCC = VPS 6 7 8 5 8 0 0 1 2 3 4 5 6 7 Supply Voltage VCC (V) Supply Voltage VCC (V) CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( µ PC8106TB) CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE ( µ PC8109TB) 12 8 10 VCC = 5.5 V Circuit Current ICC (mA) Circuit Current ICC (mA) 10 VCC = 3.0 V 8 6 4 2 0 0 1 2 3 4 5 8 VCC = 5.5 V 6 4 2 0 0 6 VCC = 3.0 V PS Pin Input Voltage VPS (V) 1 2 3 4 5 6 PS Pin Input Voltage VPS (V) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( µ PC8106TB) 16 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ( µ PC8109TB) 10 12 10 8 6 4 VCC = VPS = 3.0 V 2 Circuit Current ICC (mA) Circuit Current ICC (mA) 14 8 6 4 2 VCC = VPS = 3.0 V No signal 0 –60 –40 –20 0 20 40 60 80 100 0 –60 –40 –20 Operating Ambient Temperature TA (˚C) Data Sheet P12770EJ2V0DS00 No signal 0 20 40 60 80 100 Operating Ambient Temperature TA (˚C) 13 µPC8106TB, µPC8109TB S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V) – µPC8106TB, µPC8109TB in common – (THE parameters are monitored at DUT pins.) LO port MARKER 1 1.15 GHz MARKER 2 1.65 GHz S11 Z REF 1.0 Units 2 200.0 mUnits/ 21.201 Ω –53.748 Ω hp RF port MARKER 1 900 MHz MARKER 2 1.9 GHz S22 Z REF 1.0 Units 2 200.0 mUnits/ 26.961 Ω –87.312 Ω hp 2 2 1 1 START IF port MARKER 1 240 MHz 0.4 GHz STOP 1.9 GHz START S11 Z REF 1.0 Units 1 200.0 mUnits/ 194.16 Ω –579.53 Ω hp 1 START 14 0.1 GHz STOP 0.4 GHz Data Sheet P12770EJ2V0DS00 0.4 GHz STOP 1.9 GHz µPC8106TB, µPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) – with TEST CIRCUITS 1 and 2 (µPC8106TB, µPC8109TB in common) – (S22 data are monitored at RF connector on board.) 900 MHz (LC-matched) in test circuit 1 log MAG S22 REF 0.0 dB 1 10.0 dB/ –19.567 dB hp 1.9 GHz (matched) in test circuit 2 log MAG S22 REF 0.0 dB 1 10.0 dB/ –15.213 dB hp MARKER 1 900 MHz MARKER 1 1.9 GHz 1 1 1 START 100 MHz STOP 3 000 MHz S22 REF 1.0 Units 1 200.0 mUnits/ 36.59 Ω 2.9355 Ω hp START 100 MHz STOP 3 000 MHz S22 REF 1.0 Units 1 200.0 mUnits/ 58.191 Ω –4.1191 Ω hp MARKER 1 900 MHz 1 1 MARKER 1 1.9 GHz START 100 MHz STOP 3 000 MHz START Data Sheet P12770EJ2V0DS00 100 MHz STOP 3 000 MHz 15 µPC8106TB, µPC8109TB S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) – with application circuit example – (S22 data are monitored at RF connector on board.) 1.5 GHz (matched) in application circuit example log MAG S22 REF 0.0 dB 1 10.0 dB/ –20.901 dB hp C D MARKER 1 1.5 GHz 1 START 1.0 GHz STOP 2.0 GHz S22 Z REF 1.0 Units 1 200.0 mUnits/ 59.086 Ω –3.873 Ω hp C D MARKER 1 1.5 GHz 1 START 1.0 GHz 16 STOP Data Sheet P12770EJ2V0DS00 2.0 GHz µPC8106TB, µPC8109TB CONVERSION GAIN vs. SUPPLY VOLTAGE ( µ PC8106TB) CONVERSION GAIN vs. SUPPLY VOLTAGE ( µ PC8109TB) 10 12 Conversion Gain CG (dB) Conversion Gain CG (dB) 11 10 fRFout = 900 MHz 9 8 7 fRFout = 1.9 GHz 6 5 8 fRFout = 900 MHz 6 4 fRFout = 1.9 GHz 2 VCC = VPS VCC = VPS 4 2 3 4 5 0 2 6 CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8106TB) 15 fRFout = 900 MHz fLOin = 1140 MHz 12 VCC = VPS = 3.0 V 9 6 3 0 –25 –20 –15 –10 –5 0 5 10 –5 10 15 Conversion Gain CG (dB) Conversion Gain CG (dB) 0 5 6 6 3 –5 0 5 10 15 Local Input Level PLOin (dBm) 5 0 5 9 0 –25 –20 –15 –10 15 CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8106TB) 15 fRFout = 1.9 GHz fLOin = 1.66 GHz 10 VCC = VPS = 3.0 V –5 4 CONVERSION GAIN vs. LOCAL INPUT LEVEL (µ PC8109TB) 15 fRFout = 900 MHz fLOin = 1140 MHz 12 VCC = VPS = 3.0 V Local Input Level PLOin (dBm) –10 –25 –20 –15 –10 3 Supply Voltage VCC (V) Conversion Gain CG (dB) Conversion Gain CG (dB) Supply Voltage VCC (V) CONVERSION GAIN vs. LOCAL INPUT LEVEL ( µ PC8109TB) 15 fRFout = 1.9 GHz fLOin = 1.66 GHz 10 VCC = VPS = 3.0 V 5 0 –5 –10 –25 –20 –15 –10 Local Input Level PLOin (dBm) –5 0 5 10 15 Local Input Level PLOin (dBm) Data Sheet P12770EJ2V0DS00 17 0 Pout –20 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) –30 IM3 fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –50 –60 –70 –80 –40 –20 –30 –10 0 10 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 0 –10 Pout –20 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) –30 IM3 fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –50 –60 –70 –20 –30 –10 0 10 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 0 Pout –10 –20 –30 18 –10 Pout –20 –40 fRFout = 900 MHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1440 MHz PLOin = –5 dBm VCC = VPS = 3.0 V IM3 –50 –60 –70 –80 –40 –20 –30 –10 0 10 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 0 –10 Pout –20 –40 fRFout = 1.9 GHz flFin1 = 240 MHz flFin2 = 240.4 MHz fLOin = 1660 MHz PLOin = –5 dBm VCC = VPS = 3.0 V IM3 –50 –60 –70 –80 –40 –30 –20 –10 0 10 IF Input Level PIFin (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 0 –10 Pout –20 –30 –40 IM3 –50 –60 –70 –80 –40 0 –30 –40 –80 –40 RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8109TB) 10 –30 –40 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) –10 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL ( µ PC8106TB) 10 RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) RF Output Level of Each Tone PRFout (dBm) Third Order Intermodulation Distortion IM3 (dBm) µPC8106TB, µPC8109TB –30 –20 fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 IF Input Level PIFin (dBm) 0 10 –40 IM3 –50 –60 –70 –80 –40 Data Sheet P12770EJ2V0DS00 –30 –20 fRFout = 1.5 GHz flFin1 = 130 MHz flFin2 = 130.4 MHz fLOin = 1630 MHz PLOin = –5 dBm VCC = VPS = 3.0 V –10 IF Input Level PIFin (dBm) 0 10 LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT FREQUENCY ( µ PC8106TB) 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 VCC = VPS = 3.0 V –20 –30 –40 –50 0 0.5 1 1.5 2 2.5 3 3.5 Local Leakage at RF Pin LOrf (dBm) Local Leakage at IF Pin LOif (dBm) µPC8106TB, µPC8109TB LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT FREQUENCY ( µ PC8106TB) 0 fRFout = 1.9 GHz PLOin = –5 dBm –10 VCC = VPS = 3.0 V –20 –30 –40 –50 0 Local Input Frequency fLOin (GHZ) 0.5 1 1.5 2 2.5 3 3.5 Local Input Frequency fLOin (GHZ) IF LEAKAGE AT RF PIN vs. IF INPUT FREQUENCY ( µ PC8106TB) IF Leakage at RF Pin IFrf (dBm) 0 –10 fRFout = 1.9 GHz fLOin = 1.66 GHz PLOin = –5 dBm fIFin = –30 dBm VCC = VPS = 3.0 V –20 –30 –40 –50 0 100 200 300 400 500 600 IF Input Frequency fIFin (MHZ) Data Sheet P12770EJ2V0DS00 19 µPC8106TB, µPC8109TB PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.1 MIN. 0 to 0.1 0.65 0.65 1.3 2.0 ±0.2 20 0.15 +0.1 –0 1.25 ±0.1 2.1 ±0.1 0.2 +0.1 –0 Data Sheet P12770EJ2V0DS00 0.7 0.9 ±0.1 µPC8106TB, µPC8109TB NOTES ON CORRECT USE (1) Observe precutions for handling because of electrostatic sensitive devices. (2) Form a ground pattern wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor to the VCC pin. (5) Connect a matching circuit to the RF output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215°C or below Time: 40 seconds or less (at 200°C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Note Exposure limit: None – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Data Sheet P12770EJ2V0DS00 21 µPC8106TB, µPC8109TB [MEMO] 22 Data Sheet P12770EJ2V0DS00 µPC8106TB, µPC8109TB [MEMO] Data Sheet P12770EJ2V0DS00 23 µPC8106TB, µPC8109TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8