DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8163TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR TELEPHONE
DESCRIPTION
The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone
transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package.
The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
•
•
•
•
•
Recommended operating frequency
Supply voltage
High-density surface mounting
Higher IP3
Minimized carrier leakage
: fRFout = 0.8 GHz to 2.0 GHz, fIFin = 50 MHz to 300 MHz
: VCC = 2.7 to 3.3 V
: 6-pin super minimold package
: OIP3 = +9.5 dBm @ fRFout = 830 MHz
: Due to double balanced mixer
APPLICATIONS
• Digital cellular phones
ORDERING INFORMATION
Part Number
Package
µPC8163TB-E3
6-pin super minimold
Remark
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8163TB)
Caution
Electro-static sensitive device
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13636EJ2V0DS00 (2nd edition)
Date Published June 1999 N CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 1999
µPC8163TB
PIN CONNECTIONS
(Bottom View)
C2Y
(Top View)
3
2
1
4
4
3
5
5
2
6
6
Pin No.
Pin Name
1
IFinput
2
GND
3
LOinput
4
GND
5
VCC
6
RFoutput
1
SERIES PRODUCTS (TA = +25°C, VCC = VRFout = 3.0 V, ZL = ZS = 50 Ω )
Part No.
VCC (V)
ICC
(mA)
CG1
(dB)
CG2
(dB)
PO(sat) 1
(dBm)
PO(sat) 2
(dBm)
OIP31
(dBm)
OIP32
(dBm)
High IP3
µPC8106TB
2.7 to
5.5
9
9
7
–2
–4
+5.5
+2.0
Low Power Consumption
µPC8109TB
2.7 to
5.5
5
6
4
–5.5
–7.5
+1.5
–1.0
Higher IP3
µPC8163TB
2.7 to
3.3
16.5
9
5.5
0.5
–2
+9.5
+6.0
Type
Caution
The above table lists the typical performance of each model. See ELECTRICAL CHARACTERISTICS for
the test conditions.
BLOCK DIAGRAM (FOR THE µPC8163TB)
(Top View)
LOinput
GND
GND
VCC
IFinput
2
RFoutput
Data Sheet P13636EJ2V0DS00
µPC8163TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
RX
DEMO.
VCO
÷N
I
Q
PLL
SW
PLL
I
0˚
Phase
shifter
90˚
TX
PA
µPC8163TB
Data Sheet P13636EJ2V0DS00
Q
3
µPC8163TB
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
V
Pin
Voltage
1
IFinput
1.2
2
4
GND
0
V
Function and Explanation
This pin is IF input to double balanced mixer
(DBM). The input is designed as high
impedance. The circuit contributes to
suppress spurious signal. Also this
symmetrical circuit can keep specified
performance insensitive to process-condition
distribution. For above reason, double
balanced mixer is adopted.
GND pin. Ground pattern on the board
should be formed as wide as possible.
Track Length should be kept as short as
possible to minimize ground impedance.
3
LOinput
2.1
Local input pin. Recommendable input level
is –10 to 0 dBm.
5
VCC
2.7 to 3.3
Supply voltage pin.
6
RFoutput
Same
bias as
VCC
through
external
inductor
This pin is RF output from DBM. This pin is
designed as open collector. Due to the high
impedance output, this pin should be
externally equipped with LC matching circuit
to next stage.
Note Each pin voltage is measured with VCC = VRFout = 3.0 V.
4
Equivalent Circuit
Note
Data Sheet P13636EJ2V0DS00
5
6
3
1
2
µPC8163TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Rating
Unit
Supply Voltage
VCC
TA = +25°C, Pin 5 and 6
3.6
V
Power Dissipation of Package
PD
Mounted on double-sided copperclad 50 × 50 × 1.6
mm epoxy glass PWB
TA = +85°C
200
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Maximum Input Power
Pin
+10
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
The same voltage should be applied
to pin 5 and 6
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
−40
+25
+85
°C
Local Input Level
PLOin
Zs = 50 Ω (without matching)
–10
–5
0
dBm
RF Output Frequency
fRFout
With external matching circuit
0.8
–
2.0
GHz
50
–
300
MHz
MIN.
TYP.
MAX.
Unit
11.5
16.5
23
mA
IF Input Frequency
fIFin
ELECTRICAL CHARACTERISTICS
(TA = +25°°C, VCC = VRFout = 3.0 V, fIFin = 150 MHz, PLOin = –5 dBm)
Parameter
Circuit Current
Symbol
Conditions
ICC
No Signal
Conversion Gain 1
CG1
fRFout = 830 MHz, PIFin = –20 dBm
6
9
12
dB
Conversion Gain 2
CG2
fRFout = 1.9 GHz, PIFin = –20 dBm
2.5
5.5
8.5
dB
Maximum RF Output Power 1
PO(sat) 1
fRFout = 830 MHz, PIFin = 0 dBm
–1.5
0.5
–
dBm
Maximum RF Output Power 2
PO(sat) 2
fRFout = 1.9 GHz, PIFin = 0 dBm
–4.5
–2
–
dBm
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°°C, VCC = VRFout = 3.0 V, PLOin = –5 dBm)
Parameter
Symbol
Input Third Order Distortion Intercept
Point
IIP3 1
fIFin1 = 150.0 MHz
IIP3 2
Output Third-Order Distortion
Intercept Point
SSB Noise Figure
Data
Unit
fRFout = 830 MHz
0.5
dBm
fIFin2 = 150.4 MHz
fRFout = 1.9 GHz
0.5
OIP3 1
fIFin1 = 150.0 MHz
fRFout = 830 MHz
+9.5
OIP3 2
fIFin2 = 150.4 MHz
fRFout = 1.9 GHz
+6.0
SSB NF
Conditions
fRFout = 830 MHz, fIFin = 150 MHz
Data Sheet P13636EJ2V0DS00
12.5
dBm
dB
5
µPC8163TB
TEST CIRCUIT 1 (fRFout = 830 MHz)
RF = 830 MHz matched
Spectrum Analyzer
50 Ω
Signal Generator
1 000 pF 1 pF
6
10 nH
10 000
pF
5
4
VCC
RFoutput
IFinput
VCC
GND
GND
LOinput
1
100 pF
50 Ω
2
Signal Generator
3
100 pF
50 Ω
1 000 pF
PLoin = –5 dBm
ILLUSTRATION OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD
RFOUT
1 000 pF
IFIN
100 pF
1 pF
1 000 pF
1
10 nH
10 nH
100 pF
µ PC8163TB
LOIN
10 000 pF
EVALUATION BOARD CHARACTERS
(1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board
(2) Back side: GND pattern
(3) Solder plated patterns
(4)
{: Through holes
{
ATTENTION Test circuit or print pattern in this sheet is for testing IC characteristics.
In the case of actual system application, external circuits including print pattern and matching circuit
constant of output port should be designed in accordance with IC’s S parameters and environmental
components.
6
Data Sheet P13636EJ2V0DS00
µPC8163TB
TEST CIRCUIT 2 (fRFout = 1.9 GHz)
RF = 1.9 GHz matched
Spectrum Analyzer
50 Ω
Signal Generator
1 000 pF Strip Line
2.5 pF
6
100 nH
10 000
pF
5
4
VCC
RFoutput
IFinput
VCC
GND
GND
LOinput
1
100 pF
50 Ω
2
Signal Generator
3
100 pF
50 Ω
1 000 pF
PLoin = –5 dBm
ILLUSTRATION OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD
2 pF
RFOUT
1 000 pF
IFIN
100
pFpF
100
0.5 pF
1 000 pF
100 nH
1
100
pFpF
100
µ PC8163TB
LOIN
10 000 pF
EVALUATION BOARD CHARACTERS
(1) 35 µm thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board
(2) Back side: GND pattern
(3) Solder plated patterns
(4)
{: Through holes
{
Data Sheet P13636EJ2V0DS00
7
µPC8163TB
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified VCC = VRFout)
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
30
25
no signals
no signals
25
Circuit Current ICC (mA)
Circuit Current ICC (mA)
20
15
10
5
0
20
15
10
5
0
1
2
3
Supply Voltage VCC (V)
0
–60 –40 –20 0
20 40 60 80 100
Operating Ambient Temperature TA (°C)
4
S-PARAMETER FOR MATCHED RF OUTPUT (VCC = VRFout = 3.0 V) − with TEST CIRCUITS 1 and 2 −
(monitored at RF connector on board)
• RF output matched at 830 MHz
• RF output matched at 1.9 GHz
1; 53.422 Ω –14.973 Ω 12.807 pF
830.000 000 MHz
CH1 S11 1 U FS
[hp]
PRm
Cor
Del
2; 53.846 Ω –3.7441 Ω 22.373 pF
1 900.000 000 MHz
CH1 S11 1 U FS
[hp]
PRm
Cor
Del
MARKER1
830 MHz
Smo
Hld
Hld
2
1
MARKER2
1.9 GHz
START 100.000 000 MHz
CH1 S11 log MAG
[hp]
PRm
Cor
Del
STOP 3 000.000 000 MHz
10 dB/ REF 0 dB 1;–17.331 dB
830.000 000 MHz
START 100.000 000 MHz
CH1 S11 log MAG
[hp]
PRm
Cor
Del
MARKER1
830 MHz
STOP 3 000.000 000 MHz
10 dB/ REF 0 dB
2;–24.741 dB
1 900.000 000 MHz
1;–.5113 dB
830 MHz
MARKER2
1.9 GHz
Smo
Hld
Hld
1
1
2
START 100.000 000 MHz
8
STOP 3 000.000 000 MHz
START 100.000 000 MHz
Data Sheet P13636EJ2V0DS00
STOP 3 000.000 000 MHz
µPC8163TB
S-PARAMETERS FOR EACH PORT (VCC = VRFout = 3.0 V)
LO port
RF port (no matching)
S11
Z
REF 1.0 Units
1
200.0 mUnits/
22.676 Ω –77.055 Ω
hp
C
D
S22
Z
REF 1.0 Units
1
200.0 mUnits/
41.813 Ω –196.16 Ω
hp
C
MARKER 1
1.0 GHz
D
MARKER 2
1.75 GHz
MARKER 1
850.0 MHz
MARKER 2
1.9 GHz
1
1
2
START
STOP
2
0.100000000 GHz
3.000000000 GHz
START
STOP
0.100000000 GHz
3.000000000 GHz
IF port
S11
Z
REF 1.0 Units
1
200.0 mUnits/
463.8 Ω –496.48 Ω
hp
C
MARKER 1
150.0 GHz
D
1
START
STOP
0.050000000 GHz
1.000000000 GHz
Data Sheet P13636EJ2V0DS00
9
µPC8163TB
CONVERSION GAIN vs. LO INPUT LEVEL
CONVERSION GAIN vs. LO INPUT LEVEL
12
10
11
VCC = 3.3 V
8
7
VCC = 2.7 V
VCC = 3.0 V
5
4
3
2
Conversion Gain CG (dB)
Conversion Gain CG (dB)
9
6
fRFout = 830 MHz
fIFin = 150 MHz
PIFin = –20 dBm
1
0
–1
–20 –15 –10
–5
0
5
10
VCC = 3.0 V
4
VCC = 2.7 V
2
0
–2
fRFout = 1.9 GHz
fIFin = 150 MHz
PIFin = –20 dBm
–6
–20 –15 –10
15
–5
0
5
10
15
LO Input Level PLOin (dBm)
LO Input Level PLOin (dBm)
CONVERSION GAIN vs. LO INPUT LEVEL
CONVERSION GAIN vs. LO INPUT LEVEL
10
TA = –40 °C
11
Conversion Gain CG (dB)
9
8
7
6
TA = +85 °C
TA = +25 °C
5
4
3
2
1
0
–1
–20 –15 –10
–5
TA = –40 °C
8
10
Conversion Gain CG (dB)
6
–4
12
fRFout = 830 MHz
fIFin = 150 MHz
PIFin = –20 dBm
VCC = 3.0 V
0
5
10
15
6
TA = +25 °C
4
TA = +85 °C
2
0
–2
fRFout = 1.9 GHz
fIFin = 150 MHz
PIFin = –20 dBm
VCC = 3.0 V
–4
–6
–20 –15 –10
–5
0
5
10
LO Input Level PLOin (dBm)
LO Input Level PLOin (dBm)
10
VCC = 3.3 V
8
10
Data Sheet P13636EJ2V0DS00
15
µPC8163TB
CONVERSION GAIN vs. IF INPUT FREQUENCY
CONVERSION GAIN vs. IF INPUT FREQUENCY
12
VCC = 3.3 V
10
VCC = 3.0 V
8
VCC = 2.7 V
6
4
fRFout = 830 MHz
PIFin = –20 dBm
PLOin = –5 dBm
2
0
0
50
100
150
200
250
Conversion Gain CG (dB)
Conversion Gain CG (dB)
12
VCC = 2.7 to 3.3 V
6
4
0
300
fRFout = 1.9 GHz
PIFin = –20 dBm
PLOin = –5 dBm
0
50
100
150
200
250
300
IF Input Frequency fIFin (MHz)
IF Input Frequency fIFin (MHz)
CONVERSION GAIN vs. IF INPUT FREQUENCY
CONVERSION GAIN vs. IF INPUT FREQUENCY
12
TA = –40 °C
10
8
TA = +25 °C
TA = +85 °C
6
4
fRFout = 830 MHz
PIFin = –20 dBm
PLOin = –5 dBm
VCC = 3.0 V
2
0
50
100
150
200
250
300
Conversion Gain CG (dB)
Conversion Gain CG (dB)
8
2
12
0
10
10
8
TA = –40 °C
TA = +25 °C
6
TA = +85 °C
4
fRFout = 1.9 GHz
PIFin = –20 dBm
PLOin = –5 dBm
VCC = 3.0 V
2
0
0
IF Input Frequency fIFin (MHz)
50
100
150
200
250
300
IF Input Frequency fIFin (MHz)
Data Sheet P13636EJ2V0DS00
11
µPC8163TB
RF OUTPUT LEVEL vs. IF INPUT LEVEL
5
RF OUTPUT LEVEL vs. IF INPUT LEVEL
5
VCC = 3.3 V
VCC = 3.3 V
0
RF Output Level PRFout (dBm)
RF Output Level PRFout (dBm)
0
VCC = 3.0 V
VCC = 2.7 V
–5
–10
–15
–20
fRFout = 830 MHz
fLOin = 980 MHz
PLOin = –5 dBm
–25
–30
–30 –25 –20 –15 –10 –5
0
5
10
–5
VCC = 3.0 V
–10
–15
–20
fRFout = 1.9 GHz
fLOin = 1.75 GHz
PLOin = –5 dBm
–25
–30
–30 –25 –20 –15 –10 –5
15
IF Input Level PIFin (dBm)
TA = –40 °C
RF Output Level PRFout (dBm)
RF Output Level PRFout (dBm)
TA = +25 °C
TA = +85 °C
–15
–20
fRFout = 830 MHz
fLOin = 980 MHz
PLOin = –5 dBm
VCC = 3.0 V
–25
–30
–30 –25 –20 –15 –10 –5
0
5
10
–5
TA = +85 °C
TA = +85 °C
–10
–15
–20
fRFout = 1.9 GHz
fLOin = 1.75 GHz
PLOin = –5 dBm
VCC = 3.0 V
–25
–30
–30 –25 –20 –15 –10 –5
15
IF Input Level PIFin (dBm)
VCC = 3.3 V
VCC = 3.0 V
PRFout
VCC = 3.3 V
VCC = 2.7 V
VCC = 3.0 V
–20
VCC = 2.7 V
–30
–40
–50
IM3
fRFout = 830 MHz
fIFin1 = 150 MHz
fIFin2 = 150.4 MHz
fLOin = 980 MHz
PLOin = –5 dBm
–70
–80
–20
–10
0
5
10
15
RF OUTPUT LEVEL OF EACH TONE
AND IM3 vs. IF INPUT LEVEL
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM3 (dBm)
10
0
0
IF Input Level PIFin (dBm)
RF OUTPUT LEVEL OF EACH TONE
AND IM3 vs. IF INPUT LEVEL
10
IF Input Level PIFin (dBm)
12
15
5
–10
–90
–30
10
0
–5
–60
5
RF OUTPUT LEVEL vs. IF INPUT LEVEL
TA = –40 °C
0
–10
0
IF Input Level PIFin (dBm)
RF OUTPUT LEVEL vs. IF INPUT LEVEL
5
VCC = 2.7 V
10
VCC = 3.3 V
0
VCC = 3.0 V
–10
PRFout
VCC = 2.7 V
–20
–30
VCC = 2.7 V
VCC = 3.0 V
VCC = 3.3 V
–40
–50
–60
IM3
fRFout = 1.9 GHz
fIFin1 = 150 MHz
fIFin2 = 150.4 MHz
fLOin = 1.75 GHz
PLOin = –5 dBm
–70
–80
–90
–30
–20
–10
0
IF Input Level PIFin (dBm)
Data Sheet P13636EJ2V0DS00
10
LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY
LO LEAKAGE AT IF PIN vs. LO INPUT FREQUENCY
0
0
fRFout = 830 MHz
PLOin = –5 dBm
–10
–20
VCC = 2.7 V
–30
VCC = 3.0 V
–40
–50
600
800
VCC = 3.3 V
1000
LO Leakage at IF Pin LOif (dBm)
LO Leakage at IF Pin LOif (dBm)
µPC8163TB
fRFout = 1.9 GHz
PLOin = –5 dBm
–10
–20
VCC = 2.7 V
–30
–40
–50
1200
VCC = 3.0 V
VCC = 3.3 V
1600
1800
LO Input Frequency fLOin (MHz)
fRFout = 830 MHz
PLOin = –5 dBm
–20
VCC = 2.7 V
VCC = 3.0 V
VCC = 3.3 V
–40
–50
600
800
1000
LO LEAKGE AT RF PIN vs. LO INPUT FREQUENCY
LO Leakage at RF Pin LOrf (dBm)
LO Leakage at RF Pin LOrf (dBm)
0
–30
2200
LO Input Frequency fLOin (MHz)
LO LEAKAGE AT RF PIN vs. LO INPUT FREQUENCY
–10
2000
1200
0
fRFout = 1.9 GHz
PLOin = –5 dBm
–10
VCC = 2.7 V
–20
–30
VCC = 3.0 V
VCC = 3.3 V
1600
1800
–40
–50
LO Input Frequency fLOin (MHz)
2000
2200
LO Input Frequency fLOin (MHz)
Data Sheet P13636EJ2V0DS00
13
µPC8163TB
PACKAGE DIMENSIONS
0.1 MIN.
6 pin super minimold (Unit: mm)
2.1±0.1
0 to 0.1
0.65
0.65
1.3
2.0±0.2
14
0.15 +0.1
–0
1.25±0.1
0.2 +0.1
–0
Data Sheet P13636EJ2V0DS00
0.7
0.9±0.1
µPC8163TB
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to keep the minimum ground impedance (to prevent undesired
oscillation).
(3) Keep the track length of the ground pins as short as possible.
(4) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P13636EJ2V0DS00
15
µPC8163TB
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8