TI TPIC0108B

TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
D
D
D
D
D
D
D
Low Quiescent Supply Current of 20 µA
Optimized for Low-Power/Battery-Operated
Applications
Two Input Control Lines for Reduced
Microcontroller Overhead
Internal Current Shutdown of 5 A
40 V Load Dump Rating
Integrated Fault Protection and Diagnostics
CMOS Compatible Schmitt Trigger Inputs
for High Noise Immunity
DWP PACKAGE
(TOP VIEW)
GNDS
VCC
IN1
VCC
OUT1
OUT1
GND
IN2
GND
GNDS
description
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
GNDS
VCC
STATUS2
VCC
OUT2
OUT2
GND
STATUS1
GND
GNDS
The TPIC0108B is a PWM control intelligent H-bridge designed specifically for dc motor applications. The
device provides forward, reverse, and brake modes of operation. A logic supply voltage of 5 V is internally
derived from VCC.
The TPIC0108B has an extremely low rDS(on), 280 mΩ typical, to minimize system power dissipation. The
control inputs (IN1 and IN2) greatly simplify the microcontroller overhead requirement. The device has a low
quiescent supply current of 20 µA to suit a wide range of automotive and industrial battery-operated
applications.
The TPIC0108B provides protection against over-voltage, over-current, over-temperature, and cross
conduction faults. Fault diagnostics can be obtained by monitoring the STATUS1 and STATUS2 terminals and
the two input control lines. STATUS1 is an open-drain output suitable for wired-or connection. STATUS2 is a
push-pull output that provides a latched status output. Under-voltage protection ensures that the outputs, OUT1
and OUT2, will be disabled when VCC is less than the under-voltage detection voltage V(UVCC).
The TPIC0108B is designed using TI’s LinBiCMOS process. LinBiCMOS allows the integration of low power
CMOS structures, precision bipolar cells, and low impedance DMOS transistors.
The TPIC0108B is offered in a 20-pin thermally enhanced small-outline package (DWP) and is characterized
for operation over the operating case temperature of –40°C to 125°C.
FUNCTION TABLE
IN1
IN2
OUT1
OUT2
0
0
Z
Z
0
1
LS
HS
Motor turns clockwise
1
0
HS
LS
Motor turns counter clockwise
1
1
HS
HS
Brake, both HSDs turned on hard
MODE
Quiescent supply current mode
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinBiCMOS is a trademark of Texas Instruments Incorporated.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
block schematic
VCC
OverCurrent
Protection
HSD
IN1
OverVoltage
Detection
Logic
IN2
STATUS1
STATUS2
DMOS
Driver
5V
Reg.
Charge
Pump
(2 MHz)
UnderVoltage
Detection
DMOS
Driver
OUT2
OUT1
OpenCircuit
Detect
OverTemperature
Detection
Load-Dump
Protection
DMOS
Driver
DMOS
Driver
OverCurrent
Protection
LSD
GND
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
GND
7, 9,
12, 14
I
Power ground
GNDS
1, 10,
11, 20
I
Substrate ground
IN1
3
I
Control input
IN2
8
I
Control input
OUT1
5, 6
O
Half-H output. DMOS output
OUT2
15, 16
O
Half-H output. DMOS output
13
O
Status output
18
O
Latched status output
2, 4,
17, 19
I
Supply voltage
STATUS1
STATUS2
VCC
NOTE: It is mandatory that all four ground terminals plus at least one substrate terminal are connected to the system ground. Use all VCC and
OUT terminals.
2
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
schematics of inputs and outputs
STATUS1
STATUS2
IN1/IN2
absolute maximum ratings over operating case temperature range (unless otherwise noted)†
Power supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 33 V
Logic input voltage range, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
Load dump (for 400 ms; TC = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Status output voltage range, VO(status) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
Continuous power dissipation, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 W
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C
Maximum junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 125°C
POWER RATING
25 W
–0.2 W/°C
16 W
5W
recommended operating conditions
Supply voltage, VCC
Operating case temperature, TC
Switching frequency, fPWM
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MIN
MAX
6
18
UNIT
–40
125
°C
2
kHz
V
3
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
electrical characteristics over recommended operating case temperature range and VCC = 5 V to
6 V (unless otherwise noted)
PARAMETER
rDS(
DS(on))
TEST CONDITIONS
Static drain-source on-resistance ((per transistor))
I(BR) = 1 A
MIN
TYP
MAX
LSD
TJ = 25°C
TJ = 150°C
550
HSD
TJ = 25°C
TJ = 150°C
600
850
870
10
40
mΩ
mΩ
I(QCD)
V(UVCC(OFF))
Open circuit detection current
Under voltage detection on VCC, switch off voltage
See Note 1
5
V
V(UVCC(ON))
V(STL)
Under voltage detection on VCC, switch on voltage
See Note 1
5.2
V
STATUS low output voltage
0.8
V
V(ST2H)
I(ST(OFF))
STATUS2 high output voltage
IO = 100 µA, See Note 1
IO = 20 µA, See Note 1
STATUS output leakage current
V(ST) = 5 V, See Note 1
VIL
VIH
Low level logic input voltage
∆VI
IIH
mA
5.4
V
5
µA
–0.3
0.5
V
High level logic input voltage
3.6
7
V
Hysteresis of input voltage
0.3
High level logic input current
VIH = 3.5 V
3
100
UNIT
2
V
10
50
µA
NOTE 1: The device functions according to the function table for VCC between V(UVCC) and 5 V (no parameters specified). STATUS outputs are
not defined for VCC less than V(UVCC).
4
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
electrical characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted) (see Note 2)
PARAMETER
TEST CONDITIONS
Static drain-source on-resistance
(per transistor) IBR = 1 A
TYP
TJ = 25°C
TJ = 150°C
VCC = 6 V to 9 V
VCC = 9 V to 18 V
400
TJ = 25°C
VCC = 6 V to 9 V
VCC = 9 V to 18 V
280
TJ = 150°C
VCC = 6 V to 9 V
VCC = 9 V to 18 V
TJ = 25°C
VCC = 13.2 V
LSD
rDS(on)
DS( )
MIN
VCC = 6 V to 9 V
VCC = 9 V to 18 V
HSD
MAX
UNIT
380
280
340
620
mΩ
560
430
340
640
mΩ
400
560
20
µA
40
100
mA
I(QB)
I(QCD)
Quiescent battery current
TSDS
TSDD
Static thermal shutdown temperature
See Notes 3 and 4
140
°C
Dynamic thermal shutdown temperature
See Notes 3 and 5
160
°C
ICS
Current shutdown limit
VCC = 6 V to 9 V
VCC = 9 V to 18 V
4.8
7.5
5
7.5
I(CON)
Continuous bridge current
TJ = 125°C, Operating lifetime 10,000 hours,
(see Figure 1)
V(OVCC)
V(STL)
Over voltage detection on VCC
V(ST2H)
I(ST(OFF))
STATUS2 high output voltage
IO = 100 µA
IO = 20 µA
STATUS output leakage current
V(ST) = 5 V
VIL
VIH
∆VI
IIH
Hysteresis of input voltage
Open circuit detection current
10
27
STATUS low output voltage
A
3
A
36
V
0.8
V
3.9
5.4
V
5
µA
Low level logic input voltage
–0.3
0.8
V
High level logic input voltage
3.6
7
V
50
µA
0.3
High level logic input current
VIH = 3.5 V
2
V
10
NOTES: 2. The device functions according to the function table for VCC between 18 V and V(OVCC), but only up to a maximum supply voltage
of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability.
3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability.
4. No temperature gradient between DMOS transistor and temperature sensor.
5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat
source).
switching characteristics over recommended operating case temperature and supply voltage
ranges (unless otherwise noted)
PARAMETER
tout(on)
t( )
SR
TEST CONDITIONS
High-side driver turn-on time
Low-side driver turn-on time
Slew rate, low-to-high sinusoidal (δV/δt)
Slew rate, high-to-low sinusoidal (δV/δt)
td(QCD)
Under current spike duration to trigger
open circuit detection
td(CS)
Delay time for over current shutdown
VDS(
A
DS(on))<1 V at 1 A,
VCC = 13
13.2
2V
VCC = 13
13.2
2V
V,
IO = 1 A resistive load
VCC = 5 V to 18 V
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MIN
MAX
100
100
UNIT
µs
1
6
1
6
1
10
ms
25
µs
5
• DALLAS, TEXAS 75265
TYP
10
V/µs
5
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
thermal resistance
PARAMETER
RθJA
Junction-to-ambient thermal resistance
RθJC
Junction-to-case thermal resistance
MIN
MAX
UNIT
5
°C/W
97
°C/W
PARAMETER MEASUREMENT INFORMATION
Maximum continuous bridge current versus time based on 50 FITs at 100,000 hours operating life (90%
confidence model)
I (CON) – Continuous Bridge Current – A
10
TJ = 75°C
TJ = 150°C
5
TJ = 100°C
TJ = 125°C
0
0
10
20
30
40
50
60
70
80
90
100
t – Time × 1000-h
Figure 1. Electromigration Reliability Data
Example:
Average continuous bridge current, ICON
6
Average junction temperature, TJ
Operating lifetime of device based on electromigration
2A
125°C
>20,000 h
3A
125°C
>10,000 h
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
PARAMETER MEASUREMENT INFORMATION
operating wave forms
IN1 (Low)
IN2
STATUS1
STATUS2
ÎÎ
ÎÎ
ÎÎ
ÎÎ
OUT1
OUT2
Open Circuit
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
<1 ms (min.)
Figure 2. Open Circuit
IN1
IN2
STATUS1
ÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
STATUS2
OUT1
OUT2
Short Circuit
ILIM
Bridge Current
Figure 3. Short Circuit (e.g., OUT2 to VCC)
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7
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
PARAMETER MEASUREMENT INFORMATION
operating wave forms (continued)
IN1 (Low)
IN2
STATUS1
STATUS2
OUT1
OUT2
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Over Temperature
Figure 4. Over Temperature
IN1
IN2
STATUS1 (High)
STATUS2
OUT1
OUT2
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Quiescent
Mode
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Brake
CounterClockwise
Rotation
Clockwise
Rotation
Figure 5. No Fault
8
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Quiescent
Mode
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
PRINCIPLES OF OPERATION
protective functions and diagnostics†
over current/short circuit‡
The TPIC0108B detects shorts to VCC, ground, or across the load being driven, by comparing the VDS voltage
drop across the DMOS outputs against the threshold voltage. The DMOS outputs of the TPIC0108B will be
disabled and the fault flags will be generated 10 µs after an over-current or short-circuit fault is detected. This
10 µs delay is long enough to serve as a de-glitch filter for high current transients, yet short enough to prevent
damage to the DMOS outputs. The DMOS outputs remain latched off until either IN1 or IN2 input is toggled.
In cases where the outputs have a continuous short-to-ground or when enabled from quiescent mode with a
short-to-ground already exists (current rise time faster than 0.5 A/µs in both instances), the over-current
shutdown threshold will decrease to 3 A to reduce power dissipation. This reduction to 3 A is achieved since
the DMOS outputs will not be fully enhanced when the over-current threshold is reached if the current rise time
exceeds 0.5 A/µs. Over-current and/or short-circuit protection is provided up to VCC = 16.5 V and a junction
temperature of 90°C.
over temperature
The TPIC0108B disables all DMOS outputs and the fault flags will be set when TJ ≥140°C (min.). The DMOS
outputs remain latched off until either IN1 or IN2 input is toggled.
under voltage
The TPIC0108B disables all DMOS outputs when VCC ≤V(UVCC). The outputs will be re-enabled when
VCC ≥V(UVCC). No fault flags are set when under-voltage lockout occurs.
over voltage
In order to protect the DMOS outputs from damage caused by excessive supply voltage, the TPIC0108B
disables all outputs when VCC ≥V(OVCC). Once VCC ≤V(OVCC), either IN1 or IN2 input must be toggled to
re-enable the DMOS outputs.
cross conduction
Monitoring circuitry for each transistor detects whether the particular transistor is active to prevent the HSD or
LSD of the corresponding half H-bridge from conducting.
open circuit
During operation, the bridge current is controlled continuously. If the bridge current is >10 mA (min.) for a period
>1 ms (min.), the fault flags are set. However, the output transistors will not be disabled.
† All limits mentioned are typical values unless otherwise noted.
‡ If a short circuit occurs (i.e., the over-current detection circuitry is activated) at a supply voltage higher than 16.5 V and a junction temperature
higher than 90°C, damage to the device may occur.
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
PRINCIPLES OF OPERATION
DIAGNOSTICS TABLE (see Note 6)
IN1
IN2
OUT1
OUT2
STATUS1†
Normal operation
0
0
1
1
0
1
0
1
Z
LS
HS
HS
Z
HS
LS
HS
1
1
1
1
Open circuit between OUT1 and OUT2
0
0
1
1
0
1
0
1
Z
LS
HS
HS
Z
HS
LS
HS
1
0
0
1
STATUS2
0‡
1
1
1
0‡
0
0
1
Short circuit from OUT1 to OUT2 (see Notes 7 and 8)
0
1
1
0
X
X
X
X
0
0
0
0
Short circuit from OUT1 to GND (see Notes 7 and 8)
1
1
0
1
X
X
X
X
0
0
0
0
Short circuit from OUT2 to GND (see Notes 7 and 8)
0
1
1
1
X
X
X
X
0
0
0
0
Short circuit from OUT1 to VCC (see Notes 7 and 8)
0
1
X
X
0
0
Short circuit from OUT2 to VCC (see Notes 7 and 8)
1
0
X
X
0
Over temperature (see Note 9)
0
0
1
1
0
1
0
1
Z
Z
Z
Z
Z
Z
Z
Z
1
0
0
0
0
0‡
0
0
0
FLAG
† When wired with a pull-up resistor
‡ In quiescent mode, STATUS2 is pulled down to GND via an internal resistor.
SYMBOL
VALUE
0
Logic low
1
Logic high
HS
High-side MOSFET conducting
LS
Low-side MOSFET conducting
Z
No output transistors conducting
X
Voltage level undefined
NOTES: 6. All input combinations not stated result in STATUS output = 1.
7. STATUS1 active for a minimum of 3 µs.
8. STATUS2 active until an input is toggled.
9. Quiescent current consumption can occur only when the temperature drops below the thermal switch-off temperature.
10
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
TYPICAL CHARACTERISTICS
400
VCC = 9.18 V
300
200
100
0
–40 –20
20
40
60 80 100
TJ – Junction Temperature – °C
120 140
0
STATIC-DRAIN-SOURCE ON-RESISTANCE
vs
SUPPLY VOLTAGE
r DS(on) – Static Drain-Source On-Resistance – m Ω
r DS(on) – Static Drain-Source On-Resistance – m Ω
STATIC DRAIN-SOURCE ON-RESISTANCE
vs
JUNCTION TEMPERATURE
600
HSD, TJ = 125°C
500
LSD, TJ = 125°C
400
300
LSD, TJ = 25°C
200
100
0
0
5
Figure 6
25
QUIESCENT BATTERY CURRENT
vs
JUNCTION TEMPERATURE
20
20
I (QB) – Quiescent Battery Current – µ A
t out(on) – Output Stage Turn-On Time – µ s
20
10
15
VCC – Supply Voltage – V
Figure 7
OUTPUT STAGE TURN-ON TIME
vs
JUNCTION TEMPERATURE
15
HSD, VCC = 13.2 V
10
LSD, VCC = 13.2 V
5
0
–40 –20
HSD, TJ = 25°C
0
20
40
60 80 100
TJ – Junction Temperature – °C
120 140
15
IQB, VCC = 13.2 V
10
5
0
–40 –20
Figure 8
0
20
40 60
80 100 120 140
TJ – Junction Temperature – °C
Figure 9
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11
TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
APPLICATION INFORMATION
5V
VCC
100 kΩ
VCC
IN1
IN2
OUT1
TPIC0108B
STATUS1
M
100 nF
47 µF†
OUT2
STATUS2
GND GNDS
CONTROL DIAGNOSTIC
Microcontroller
† Necessary for isolating supply voltage or interruption (e.g., 47 µF).
NOTE: If a STATUS output is not connected to the appropriate microcontroller input, it shall remain unconnected.
recirculation current mode
When an inductive load (motor) is switched from one control mode to another, (i.e., forward to reverse) the
TPIC0108B automatically enters a special recirculation current mode condition. This condition allows fast
elimination of the recirculation currents caused by inductive switching. Once these currents have subsided to
an acceptable level, the device automatically enters the requested state. This feature eliminates the need for
either internally or externally connected free wheeling diodes and protects the TPIC0108B from damage due
to high inductive voltage transients.
The recirculation current mode condition is triggered when the voltage at the HSD output voltage exceeds
typically VCC + 0.7 V. In this condition, a diode inherent in the HSD structure turns on. Simultaneously internal
control circuitry turns on the opposite HSD, thus providing a current path for the recirculating currents.
Using TPIC0108B in PWM operation brake mode shall be applied before going into quiescent mode.
12
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TPIC0108B
PWM CONTROL INTELLIGENT H-BRIDGE
SLIS068 – NOVEMBER1998
MECHANICAL DATA
DWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
20-PIN SHOWN
0.020 (0,51)
0.014 (0,35)
0.050 (1,27)
20
0.010 (0,25) M
11
Thermal Pad
(See Note D)
0.419 (10,65)
0.400 (10,16)
0.299 (7,59)
0.010 (0,25) NOM
0.293 (7,45)
Gage Plane
1
10
0.010 (0,25)
A
0°– 8°
0.050 (1,27)
0.016 (0,40)
Seating Plane
0.104 (2,65) MAX
0.006 (0,15)
0.004 (0,10)
0.002 (0,05)
PINS **
16
20
24
28
A MAX
0.410
(10,41)
0.510
(12,95)
0.610
(15,49)
0.710
(18,03)
A MIN
0.400
(10,16)
0.500
(12,70)
0.600
(15,24)
0.700
(17,78)
DIM
4147575/A 02/98
NOTES: A.
B.
C.
D.
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15).
The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This pad is electrically
and thermally connected to the backside of the die and possibly selected leads.
PowerPAD is a trademark of Texas Instruments Incorporated.
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13
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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