NEC UPD23C128000BL

DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD23C128000BL
128M-BIT MASK-PROGRAMMABLE ROM
16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)
Description
The µPD23C128000BL is a 134,217,728 bits mask-programmable ROM.
The word organization is selectable
(BYTE mode : 16,777,216 words by 8 bits, WORD mode : 8,388,608 words by 16 bits). With 44-pin PLASTIC SOP
package products, only word mode can be used; it is not possible to switch to byte mode.
The active levels of OE (Output Enable Input) can be selected with mask-option.
The µPD23C128000BL is packed in 48-pin PLASTIC TSOP (I) and 44-pin PLASTIC SOP.
Features
• Word organization
16,777,216 words by 8 bits (BYTE mode)
Note
8,388,608 words by 16 bits (WORD mode)
Note
Note With 44-pin PLASTIC SOP package products, only word mode can be used.
It is not possible to switch to byte mode.
• Operating supply voltage : VCC = 2.7 to 3.6 V
Operating supply voltage
Access time
Power supply current (Active mode)
Standby current (CMOS level input)
VCC
ns (MAX.)
mA (MAX.)
µA (MAX.)
3.0 V ± 0.3 V
120
50
30
3.3 V ± 0.3 V
100
55
Ordering Information
Part Number
Package
µPD23C128000BLGY-xxx-MJH
48-pin PLASTIC TSOP(I) (12x18) (Normal bent)
µPD23C128000BLGY-xxx-MKH
48-pin PLASTIC TSOP(I) (12x18) (Reverse bent)
µPD23C128000BLGX-xxx
44-pin PLASTIC SOP (15.24 mm (600))
(xxx : ROM code suffix No.)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15900EJ3V0DS00 (3rd edition)
Date Published February 2003 NS CP (K)
Printed in Japan
The mark
shows major revised points.
2002
µPD23C128000BL
Pin Configurations
/xxx indicates active low signal.
48-pin PLASTIC TSOP (I) (12x18) (Normal bent)
[ µPD23C128000BLGY-xxx-MJH ]
Marking Side
WORD, /BYTE
1
48
GND
A16
2
47
GND
A15
3
46
O15, A−1
A14
4
45
O7
A13
5
44
O14
A12
6
43
O6
A11
7
42
O13
A10
8
41
O5
A9
9
40
O12
A8
10
39
O4
A19
11
38
VCC
A21
12
37
VCC
A20
13
36
A22
A18
14
35
O11
A17
15
34
O3
A7
16
33
O10
A6
17
32
O2
A5
18
31
O9
A4
19
30
O1
A3
20
29
O8
A2
21
28
O0
A1
22
27
/OE or OE or DC
A0
23
26
GND
/CE
24
25
GND
A0 to A22
: Address inputs
O0 to O7, O8 to O14 : Data outputs
O15, A–1
: Data output 15 (WORD mode),
LSB Address input (BYTE mode)
WORD, /BYTE
: Mode select input
/CE
: Chip Enable input
/OE or OE
: Output Enable input
VCC
: Supply voltage
GND
: Ground
DC
: Don’t Care
Remark Refer to Package Drawings for the 1-pin index mark.
2
Data Sheet M15900EJ3V0DS
µPD23C128000BL
48-pin PLASTIC TSOP (I) (12x18) (Reverse bent)
[ µPD23C128000BLGY-xxx-MKH ]
Marking Side
GND
48
1
WORD, /BYTE
GND
47
2
A16
O15, A−1
46
3
A15
O7
45
4
A14
O14
44
5
A13
O6
43
6
A12
O13
42
7
A11
O5
41
8
A10
O12
40
9
A9
O4
39
10
A8
VCC
38
11
A19
VCC
37
12
A21
A22
36
13
A20
O11
35
14
A18
O3
34
15
A17
O10
33
16
A7
O2
32
17
A6
O9
31
18
A5
O1
30
19
A4
O8
29
20
A3
O0
28
21
A2
/OE or OE or DC
27
22
A1
GND
26
23
A0
GND
25
24
/CE
A0 to A22
: Address inputs
O0 to O7, O8 to O14 : Data outputs
O15, A–1
: Data output 15 (WORD mode),
LSB Address input (BYTE mode)
WORD, /BYTE
: Mode select input
/CE
: Chip Enable input
/OE or OE
: Output Enable input
VCC
: Supply voltage
GND
: Ground
DC
: Don’t Care
Remark Refer to Package Drawings for the 1-pin index mark.
Data Sheet M15900EJ3V0DS
3
µPD23C128000BL
44-pin PLASTIC SOP (15.24 mm (600))
[ µPD23C128000BLGX-xxx ]
Marking Side
A21
1
44
A20
A18
2
43
A19
A17
3
42
A8
A7
4
41
A9
A6
5
40
A10
A5
6
39
A11
A4
7
38
A12
A3
8
37
A13
A2
9
36
A14
A1
10
35
A15
A0
11
34
A16
/CE
12
33
A22
GND
13
32
GND
/OE or OE or DC
14
31
O15
O0
15
30
O7
O8
16
29
O14
O1
17
28
O6
O9
18
27
O13
O2
19
26
O5
O10
20
25
O12
O3
21
24
O4
O11
22
23
VCC
A0 to A22
:
Address inputs
O0 to O15
:
Data outputs
/CE
:
Chip Enable
/OE or OE
:
Output Enable
VCC
:
Supply voltage
GND
:
Ground
DC
:
Don’t Care
Remarks 1. Refer to Package Drawings for the 1-pin index mark.
2. With 44-pin PLASTIC SOP package products, only word mode (8,388,608 words x 16 bits) can be
used. There is no mode select (WORD, /BYTE) pin.
4
Data Sheet M15900EJ3V0DS
µPD23C128000BL
Input / Output Pin Functions
Pin name
WORD, /BYTE
Input / Output
Input
Function
The pin for switching WORD mode and BYTE mode.
High level : WORD mode (8M-word by 16-bit)
Low level : BYTE mode (16M-word by 8-bit)
A0 to A22
Input
(Address inputs)
Address input pins.
A0 to A22 are used differently in the WORD mode and the BYTE mode.
WORD mode (8M-word by 16-bit)
A0 to A22 are used as 23 bits address signals.
BYTE mode (16M-word by 8-bit)
A0 to A22 are used as the upper 23 bits of total 24 bits of address signal.
(The least significant bit (A−1) is combined to O15.)
O0 to O7, O8 to O14
Output
(Data outputs)
Data output pins.
O0 to O7, O8 to O14 are used differently in the WORD mode and the BYTE mode.
WORD mode (8M-word by 16-bit)
The lower 15 bits of 16 bits data outputs to O0 to O14.
(The most significant bit (O15) combined to A−1.)
BYTE mode (16M-word by 8-bit)
8 bits data outputs to O0 to O7 and also O8 to O14 are high impedance.
O15, A−1
Output, Input O15, A−1 are used differently in the WORD mode and the BYTE mode.
(Data output 15,
WORD mode (8M-word by 16-bit)
LSB Address input)
The most significant output data bus (O15).
BYTE mode (16M-word by 8-bit)
The least significant address bus (A−1).
/CE
Input
(Chip Enable)
Chip activating signal.
When the OE is active, output states are following.
High level : High-Z
Low level : Data out
/OE or OE or DC
Input
(Output Enable, Don’t Care)
Output enable signal. The active level of OE is mask option. The active level of OE
can be selected from high active, low active and Don’t care at order.
VCC
−
Supply voltage
GND
−
Ground
Data Sheet M15900EJ3V0DS
5
µPD23C128000BL
Block Diagram
O9
O8
O0
A0
O1
O10
O2
O11
O3
O13
O12
O4
O5
O6
O14
O15, A−1
O7
A2
A3
Y-Selector
A4
Logic/Input
Y-Decoder
Output Buffer
A1
WORD, /BYTE
/OE or OE or DC
A5
A9
A10
A11
A12
A13
A14
Memory Cell Matrix
8,388,608 words by 16 bits /
16,777,216 words by 8 bits
A15
A16
A17
A18
A19
A20
A21
A22
6
Data Sheet M15900EJ3V0DS
Input Buffer
A8
X-Decoder
A7
Address Input Buffer
A6
/CE
µPD23C128000BL
Mask Option
The active levels of output enable pin (/OE or OE or DC) are mask programmable and optional, and can be selected
from among " 0 " " 1 " " x " shown in the table below.
Option
/OE or OE or DC
OE active level
0
/OE
L
1
OE
H
x
DC
Don’t care
Operation modes for each option are shown in the tables below.
Operation mode (Option : 0)
/CE
/OE
Mode
Output state
L
L
Active
Data out
H
H
H or L
High-Z
Standby
High-Z
Operation mode (Option : 1)
/CE
OE
Mode
Output state
L
L
Active
High-Z
H
H
H or L
Data out
Standby
High-Z
Operation mode (Option : x)
/CE
DC
Mode
Output state
L
H or L
Active
Data out
H
H or L
Standby
High-Z
Remark L : Low level input
H : High level input
Data Sheet M15900EJ3V0DS
7
µPD23C128000BL
Electrical Specifications
Absolute Maximum Ratings
Parameter
Rating
Unit
VCC
–0.3 to +4.6
V
Input voltage
VI
–0.3 to VCC+0.3
V
Output voltage
VO
–0.3 to VCC+0.3
V
Operating ambient temperature
TA
–10 to +70
°C
Storage temperature
Tstg
–65 to +150
°C
Supply voltage
Symbol
Condition
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Capacitance (TA = 25 °C)
Parameter
Symbol
Input capacitance
CI
Output capacitance
CO
Test condition
MIN.
TYP.
MAX.
Unit
10
pF
12
pF
MAX.
Unit
2.0
VCC + 0.3
V
VCC = 3.0 V ± 0.3 V
–0.3
+0.5
V
VCC = 3.3 V ± 0.3 V
–0.3
+0.8
2.4
f = 1 MHz
DC Characteristics (TA = –10 to +70 °C, VCC = 2.7 to 3.6 V)
Parameter
Symbol
High level input voltage
VIH
Low level input voltage
VIL
Test conditions
High level output voltage
VOH
IOH = –100 µA
Low level output voltage
VOL
IOL = 2.1 mA
MIN.
TYP.
V
0.4
V
Input leakage current
ILI
VI = 0 V to VCC
–10
+10
µA
Output leakage current
ILO
VO = 0 V to VCC, Chip deselected
–10
+10
µA
Power supply current
ICC1
/CE = VIL (Active mode), VCC = 3.0 V ± 0.3 V
50
mA
VCC = 3.3 V ± 0.3 V
55
IO = 0 mA
Standby current
8
ICC3
/CE = VCC – 0.2 V (Standby mode)
Data Sheet M15900EJ3V0DS
30
µA
µPD23C128000BL
AC Characteristics (TA = –10 to +70 °C, VCC = 2.7 to 3.6 V)
Parameter
Symbol
Test condition
VCC = 3.0 V ± 0.3 V
MIN
Address access time
tACC
Address skew time
tSKEW
Note
TYP.
VCC = 3.3 V ± 0.3 V
MAX.
MIN
TYP.
Unit
MAX.
120
100
ns
10
10
ns
Chip enable access time
tCE
120
100
ns
Output enable access time
tOE
25
25
ns
Output hold time
tOH
0
Output disable time
tDF
0
WORD, /BYTE access time
tWB
0
20
120
0
ns
20
ns
100
ns
Note tSKEW indicates the following three types of time depending on the condition.
1) When switching /CE from high level to low level, tSKEW is the time from the /CE low level input point until the
next address is determined.
2) When switching /CE from low level to high level, tSKEW is the time from the address change start point to the
/CE high level input point.
3) When /CE is fixed to low level, tSKEW is the time from the address change start point until the next address is
determined.
Since specs are defined for tSKEW only when /CE is active, tSKEW is not subject to limitations when /CE is
switched from high level to low level following address determination, or when the address is changed after
/CE is switched from low level to high level.
Remark tDF is the time from inactivation of Chip Enable input (/CE) or Output Enable input (/OE or OE) to
high impedance state output.
AC Test Conditions
Input waveform (Rise / Fall Time ≤ 5 ns)
1.4 V
Test points
1.4 V
1.4 V
Test points
1.4 V
Output waveform
Output load
1TTL + 100 pF
Data Sheet M15900EJ3V0DS
9
µPD23C128000BL
Cautions on power application
To ensure normal operation, always apply power using /CE following the procedure shown below.
1) Input a high level to /CE during and after power application.
2) Hold the high level input to /CE for 200 ns or longer (wait time).
3) Start normal operation after the wait time has elapsed.
Power Application Timing Chart 1 (When /CE is made high at power application)
Wait time
Normal operation
/CE (Input)
200 ns or longer
VCC
Power Application Timing Chart 2 (When /CE is made high after power application)
Wait time
/CE (Input)
200 ns or longer
VCC
Caution Other signals can be either high or low during the wait time.
10
Data Sheet M15900EJ3V0DS
Normal operation
µPD23C128000BL
Read Cycle Timing Chart
tSKEW
tSKEW
tSKEW
A0 to A22,
(Input)
A−1 Note1
tACC
tACC
tACC
/CE (Input)
tDF Note2
tCE
tDF Note2
/OE or OE (Input)
tOE
O0 to O7,
(Input)
O8 to O15 Note3
tOH
High-Z
tOH
High-Z
Data out
tOH
Data out
Data out
Notes 1. During WORD mode, A–1 is O15.
2. tDF is the time from inactivation of Chip Enable input (/CE) or Output Enable input (/OE or OE) to
high impedance state output.
3. During BYTE mode, O8 to O14 are high impedance and O15 is A–1.
WORD, /BYTE Switch Timing Chart
A−1 (Input)
High-Z
High-Z
WORD, /BYTE (Input)
tOH
O0 to O7 (Output)
Data Out
tACC
tOH
Data Out
tWB
Data Out
tDF
O8 to O15 (Output)
Data Out
High-Z
Data Out
Remark Chip Enable (/CE) and Output Enable (/OE or OE) : Active.
Data Sheet M15900EJ3V0DS
11
µPD23C128000BL
Package Drawings
48-PIN PLASTIC TSOP(I) (12x18)
1
detail of lead end
48
F
G
R
Q
24
L
25
S
E
P
I
A
J
C
S
D
K
N
B
M M
S
NOTES
ITEM
MILLIMETERS
1. Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
A
12.0±0.1
B
0.45 MAX.
2. "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.)
C
0.5 (T.P.)
D
0.22±0.05
E
0.1±0.05
F
1.2 MAX.
G
1.0±0.05
I
16.4±0.1
J
0.8±0.2
K
0.145±0.05
L
0.5
M
0.10
N
0.10
P
18.0±0.2
Q
3° +5°
−3°
R
S
0.25
0.60±0.15
S48GY-50-MJH1-1
12
Data Sheet M15900EJ3V0DS
µPD23C128000BL
48-PIN PLASTIC TSOP(I) (12x18)
detail of lead end
1
48
E
S
L
Q
R
24
G
25
F
K
N
S
S
I
M M
D
J
B
C
A
P
NOTES
1. Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.
2. "A" excludes mold flash. (Includes mold flash : 12.4 mm MAX.)
ITEM
A
MILLIMETERS
12.0±0.1
B
0.45 MAX.
C
0.5 (T.P.)
D
0.22±0.05
E
0.1±0.05
F
1.2 MAX.
G
1.0±0.05
I
16.4±0.1
J
0.8±0.2
K
0.145±0.05
L
0.5
M
0.10
N
0.10
P
18.0±0.2
Q
3° +5°
−3°
R
0.25
S
0.60±0.15
S48GY-50-MKH1-1
Data Sheet M15900EJ3V0DS
13
µPD23C128000BL
44-PIN PLASTIC SOP (15.24 mm (600))
44
23
detail of lead end
P
1
22
A
H
F
I
G
J
S
N
C
D
M
S
B
L
K
M
E
NOTE
ITEM
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
A
MILLIMETERS
27.83+0.4
−0.05
B
0.78 MAX.
C
1.27 (T.P.)
0.42 +0.08
−0.07
D
E
F
G
0.15±0.1
3.0 MAX.
2.7±0.05
H
16.04±0.3
I
J
13.24±0.1
1.4±0.2
K
0.22 +0.08
−0.07
L
M
N
P
0.8±0.2
0.12
0.10
3° +7°
−3°
P44GX-50-600A-4
14
Data Sheet M15900EJ3V0DS
µPD23C128000BL
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the µPD23C128000BL.
Types of Surface Mount Device
µPD23C128000BLGY-xxx-MJH
: 48-pin PLASTIC TSOP(I) (12x18) (Normal bent)
µPD23C128000BLGY-xxx-MKH : 48-pin PLASTIC TSOP(I) (12x18) (Reverse bent)
µPD23C128000BLGX-xxx
: 44-pin PLASTIC SOP (15.24 mm (600))
Data Sheet M15900EJ3V0DS
15
µPD23C128000BL
Revision History
Edition/
Date
3rd edition/
Page
Type of
This
Previous
edition
edition
p.9
p.9
Location
Addition
AC Characteristics
Feb. 2003
16
Description
(Previous edition → This edition)
revision
Address skew time (tSKEW )
Note
p.10
–
Addition
Cautions on power application
p.11
p.10
Modification
Read Cycle Timing Chart
Data Sheet M15900EJ3V0DS
µPD23C128000BL
[MEMO]
Data Sheet M15900EJ3V0DS
17
µPD23C128000BL
[MEMO]
18
Data Sheet M15900EJ3V0DS
µPD23C128000BL
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF THE APPLIED WAVEFORM OF INPUT PINS AND THE UNUSED INPUT PINS
FOR CMOS
Note:
Input levels of CMOS devices must be fixed. CMOS devices behave differently than Bipolar or
NMOS devices. If the input of a CMOS device stays in an area that is between V IL (MAX.) and
V IH (MIN.) due to the effects of noise or some other irregularity, malfunction may result.
Therefore, not only the input waveform is fixed, but also the waveform changes, it is important
to use the CMOS device under AC test conditions. For unused input pins in particular, CMOS
devices should not be operated in a state where nothing is connected, so input levels of CMOS
devices must be fixed to high or low by using pull-up or pull-down circuitry. Each unused pin
should be connected to V DD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device
and related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet M15900EJ3V0DS
19
µPD23C128000BL
These commodities, technology or software, must be exported in accordance
with the export administration regulations of the exporting country.
Diversion contrary to the law of that country is prohibited.
• The information in this document is current as of February, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1