VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base 2 common cathode Anode TO-220AB • • • • Anode 2 1 Common 3 cathode • • • PRODUCT SUMMARY Package • TO-220AB IF(AV) 2 x 15 A VR 35 V, 45 V VF at IF See Electrical table IRM max. 40 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 16 mJ 150 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS 30 A 35/45 V Rectangular waveform (per device) VRRM IFRM TC = 130 °C (per leg) IFSM tp = 5 μs sine 1060 VF 30 Apk, TJ = 125 °C 0.73 V TJ Range - 65 to 150 °C 30 A VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS-MBR2545CTPbF VS-MBR2545CT-N3 UNITS 35 35 45 45 V VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per leg per device Peak repetitive forward current per leg TEST CONDITIONS Non-repetitive peak surge current TC = 130 °C, rated VR IFRM Rated VR, square wave, 20 kHz, TC = 130 °C Non-repetitive avalanche energy per leg Repetitive avalanche current per leg Revision: 30-Aug-11 IFSM UNITS 15 IF(AV) 5 µs sine or 3 µs rect. pulse VALUES 30 Following any rated load condition and with rated VRRM applied 30 A 1060 Surge applied at rated load conditions halfwave, single phase, 60 Hz 150 EAS TJ = 25 °C, IAS = 2 A, L = 8 mH 16 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Document Number: 94291 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM (1) Maximum instantaneous reverse current IRM (1) Threshold voltage VF(TO) TEST CONDITIONS 30 A TJ = 25 °C 0.82 TJ = 125 °C 0.73 Rated DC voltage TJ = 125 °C TJ = TJ maximum Forward slope resistance rt Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Measured from top of terminal to mounting plane Typical series inductance Maximum voltage rate of change dV/dt VALUES TJ = 25 °C Rated VR 0.2 40 UNITS V mA 0.355 V 12.3 m 700 pF 8.0 nH 10 000 V/µs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ - 65 to 150 Maximum storage temperature range TStg - 65 to 175 Maximum thermal resistance, junction to case per leg RthJC DC operation 1.5 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 °C/W Approximate weight Mounting torque Marking device Revision: 30-Aug-11 °C minimum maximum Non-lubricated threads Case style TO-220AB 2 g 0.07 oz. 6 (5) kgf · cm (lbf · in) 12 (10) MBR2535CT MBR2545CT Document Number: 94291 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series IF - Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 100 10 IR - Reverse Current (mA) 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 10 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 50 °C 0.01 0.001 1 TJ = 25 °C 0.0001 0.2 0.4 0.6 0.8 1.0 0 1.4 1.2 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 20 30 50 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 30-Aug-11 Document Number: 94291 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series www.vishay.com Vishay Semiconductors 14 Average Power Loss (W) Allowable Case Temperature (°C) 150 140 DC 130 Square wave (D = 0.50) Rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 12 10 8 RMS limit 6 4 DC 2 See note (1) 0 100 0 4 8 12 20 16 5 0 24 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 30-Aug-11 Document Number: 94291 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 25 45 CT PbF 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating (30 A) 4 - Voltage ratings 5 - CT = Essential part number 6 - Environmental digit 35 = 35 V 45 = 45 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBR2535CTPbF 50 1000 Antistatic plastic tube VS-MBR2535CT-N3 50 1000 Antistatic plastic tube VS-MBR2545CTPbF 50 1000 Antistatic plastic tube VS-MBR2545CT-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 30-Aug-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Document Number: 94291 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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