DATA SHEET GaAs INTEGRATED CIRCUIT µPG110P 2 to 8 GHz WIDE BAND AMPLIFIER CHIP DESCRIPTION The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of the microwave communication system and the measurement equipment. FEATURES • Ultra wide band : 2 to 8 GHz • High Power Gain : GP = 15 dB TYP. • Medium Power @f = 2 to 8 GHz : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz ORDERING INFORMATION PART NUMBER FORM µPG110P Chip ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage VDD +10 V Input Voltage VIN –5 to +0.6 V Input Power Pin +10 dBm Total Power Dissipation Ptot*1 1.5 W Operating Temperature Topr*2 –65 to +125 °C Storage Temperature Tstg –65 to +125 °C *1 Mounted with AuSn hard solder *2 The temperature of base material beside the chip RECOMMENDED OPERATING CONDITIONS (TA = 25 °C) Supply Voltage VDD +8 ± 0.2 V Input Power Pin –5 dBm Document No. P11882EJ2V0DS00 (2nd edition) (Previous No. ID-2454) Date Published September 1996 P Printed in Japan © 1989 µPG110P ELECTRICAL CHARACTERISTICS (TA = 25 °C)*3 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 180 mA VDD = +8 V dB f = 2 to 8 GHz Supply Current IDD 65 135 Power Gain GP 12 15 Gain Flatness ∆G P Input Return Loss RLin 6 10 dB Output Return Loss RLout 7 10 dB Isolation ISL 30 40 dB Output Power at 1 dB Gain Compression Point PO(1 dB) 10 14 dBm ±1.5 TEST CONDITIONS dB *3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1. Fig. 1 4 pin Ceramic Package Top View 4.5 MAX. 1.48 MAX. 0.7 +0.2 –0.1 0.1 ± 0.06 4.1 MIN. 2 4.6 MAX. 4.1 MIN. 0.4 ± 0.06 0.6 ± 0.06 µPG110P TYPICAL CHARACTERISTICS (TA = 25 °C)*4 POWER GAIN vs. FREQUENCY VDD = +8 V IDD = 132 mA GP - Power Gain - dB 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 f - Frequency - GHz RLin - Input Return Loss - dB RLout - Output Return Loss - dB INPUT RETURN LOSS vs. FREQUENCY VDD = +8 V IDD = 132 mA 0 RLin –10 –20 RLout –30 0 1 2 3 4 5 6 7 8 9 10 f - Frequency - GHz ISOLATION vs. FREQUENCY 0 VDD = +8 V IDD = 132 mA ISL - Isolation - dB –20 –40 –60 –80 0 1 2 3 4 5 6 7 8 9 10 f - Frequency - GHz 3 µPG110P OUTPUT POWER vs. INPUT POWER Pout - Output Power - dBm 20 10 0 VDD = +8 V IDD = 132 mA f = 2 GHz f = 5 GHz f = 8 GHz –20 –10 0 10 Pin - Input Power - dBm *4 These characteristics are measured for device mounted in the standard package shown in Fig. 1. EQUIVALENT CIRCUIT VDD RL2 RL1 Active Load RF2 CRF LL3 LL1 LL2 RF1 L3 L2 OUT Lin IN L1 RG2 RG1 LG1 4 C2 C1 RS1 CS RG3 C4 C3 µPG110P RECOMMENDED CHIP ASSEMBLY CONDITIONS Die Attachment Atmosphere : N2 gas Temperature : 320 ± 5 °C AuSn Preform : 0.5 × 0.5 × 0.05t (mm), 1 pce. * The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not be used. Base Material : CuW, Cu, KV * Other material should not be used. Epoxy Die Attach is not recommended. Bonding Machine : TCB * USB is not recommended : 30 µm diameter Au wire Wire Temperature : 260 ± 5 °C Strength : 31 ± 3 g Atmosphere : N2 gas Chip Bonding Diagram VDD less than 300 µ m 50 to 100 µ m 200 to 500 µ m 5 GND VDD 500 to 1 000 µm IN OUT GND 1 2 GND not used GND 3 GND 200 to 500 µm 4 less than 200 µm 5 µPG110P Recommended Wire Length 1. 500 to 1 000 µm for Input (the longer the wire, the better the VSWR) 2. 200 to 500 µm for Output (the shorter the wire, the better the VSWR) 3. It should be bonded via a chip capacitor for VDD. Wire length is 200 to 500 µm 4. There are five GND pads but GND pad <2> is not used. Wire length is 200 µm for <1>, <3> and <4>. Less than 300 µm for <5>. Chip Size: 1.1 × 1.3 mm t = 140 µm Pad Size : 100 × 100 µm 6 µPG110P QUALITY ASSURANCE (Refer to GET-30116) 1. 100 % Tests 1-1 100 % DC Probe 1-2 Visual Inspection MIL-STD-883 Method 2010 Condition B 2. Tests on Sampling Basis 2-1 Bond Pull Tests (In case of recommended chip handling) MIL-STD-883 Method 2011 5 samples/wafer and 20 points tested Accept 0/Reject 1 2-2 Tests in Standard Package Test the electrical characteristics of chips assembled into the standard package used for µPG110B 5 samples/wafer tested DC and RF measurement Accept 1/Reject 2 3. Warrantee NEC has a responsibility of quality assurance for the products within 180 days after delivered to customers where these are handled properly and stored in a desiccater with the flow of dry N2 gas. 4. Caution 4-1 Take great care to prevent static electricity. 4-2 Be sure that Die Attach is performed in N2 atmosphere. 7 µPG110P Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Galium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Anti-radioactive design is not implemented in this product. M4 96.5