NJG1101F WIDE BAND AGC AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1101F is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 850MHz from 2.5GHz. NJG1101F is a variable gain amplifier with 40 dB dynamic range and exhibits low current consumption. MTP6 package is adopted. nFEATURES lSingle and low voltage operation lLow current consumption lSmall signal gain nPACKAGE OUTLINE NJG1101F VDD=+3.0V typ. IDD=10mA typ. 18dB typ. @f=1.5GHz (f=0.85~2.5GHz @3dB down) 40dB typ. @VCONT=+0.1~+2.0V +1.5dBm typ. @f=1.5GHz MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm) lWide gain control range lPout at 1dB gain compression point lPackage nPIN CONFIGURATION F TYPE (Top View) Note: 1 6 2 5 3 4 Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.GND 6.VDD is a package orientation mark. -1- NJG1101F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gain Control Voltage Input Power Power Dissipation Operating Temperature (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6 V 3 V 10 dBm 300 mW -40~+85 °C SYMBOL CONDITIONS VDD VCONT VDD=3V Pin VDD=3V, VCONT=2V PD Topr Storage Temperature Tstg -55~+150 °C nELECTRICAL CHARACTERISTICS1 (Wide band: Measured at TEST CIRCUIT 1) (Ta=25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq VDD=3.0V 0.85 1.5 2.5 GHz Drain Voltage VDD Operating Current IDD Small Signal Gain Gain Gain Flatness Gflat Gain Control Range Gcont Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) -2- VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT=2V, Pin=-25dBm f=0.85~2.5GHz VDD=3.0V, VCONT=0.1~2.0V, Pin=-25dBm, f=1.5GHz 2.7 3.0 5.0 V - 10 13 mA 15.5 18 21 dB - 3 - dB 35 40 - dB P-1dB VDD=3.0V, VCONT=2V, f=1.5GHz - +1.5 - dBm Pacp VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz Offset=50kHz, Pin ; π/4 DQPSK - -68 - dBc NJG1101F nELECTRICAL CHARACTERISTICS 2 (800MHz Band: Measured at TEST CIRCUIT 2) (Ta=25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq Drain Voltage VDD Operating Current IDD Small Signal Gain Gain Gain Flatness Gflat Gain Control Range Gcont Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) VDD=3.0V VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=0.85~2.5GHz VDD=3.0V, VCONT=0.1~2.0V, Pin=-25dBm, f=1.5GHz 850 938 960 MHz 2.7 3.0 5.0 V - 10 13 mA 15.5 18 21 dB - 0.5 - dB 35 40 - dB P-1dB VDD=3.0V, VCONT=2V, f=1.5GHz - +1.5 - dBm Pacp VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz offset=50kHz, Pin ; π/4 DQPSK - -68 - dBc Input VSWR VSWRi VDD=3.0V, VCONT=2V, f=1.5GHz - 1.8 - Output VSWR VSWRo VDD=3.0V, VCONT=2V, f=1.5GHz - 1.5 - -3- NJG1101F nELECTRICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GH: Measured at TEST CIRCUIT 2) (Ta=25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency 1 freq1 VDD=3.0V 1429 1441 1453 MHz Operating Frequency 2 freq2 VDD=3.0V 1800 1900 1920 MHz Drain Voltage VDD Operating Current IDD Small Signal Gain Gain Gain Flatness 1 Gflat1 Gain Flatness 2 Gflat2 Gain Control Range Pout at 1dB Gain Compression point 1 Pout at 1dB Gain Compression point 2 Adjacent Channel Leakage Power 1 (PDC Regulation) Adjacent Channel Leakage Power 2 (PDC Regulation) Gcont P-1dB1 P-1dB2 Pacp1 Pacp2 VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=1429~1453MHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=1800~1920MHz VDD=3.0V, VCONT=0.1~2.0V, Pin=-25dBm VDD=3.0V, VCONT=2V f=1429~1453MHz VDD=3.0V, VCONT=2V f=1800~1920MHz VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1441MHz offset=50kHz, Pin ; π/4 DQPSK VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1900MHz offset=50kHz, Pin ; π/4 DQPSK 2.7 3.0 5.0 V - 10 13 mA 15.5 18 21 dB - 0.5 - dB - 0.5 - dB 35 40 - dB - +1.5 - dBm - +1.0 - dBm - -68 - dBc - -70 - dBc Input VSWR VSWRi VDD=3.0V, VCONT=2V - 1.8 - Output VSWR VSWRo VDD=3.0V, VCONT=2V - 1.5 - -4- NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) S21,S11,S22,S12 vs. FREQUENCY (V =3V, V DD 20 GAIN vs. FREQUENCY =2V) cont -10 (V =3V) V -20 0 -30 S12 -10 -40 10 Gain (dB) 10 S12 (dB) S21,S11,S22 (dB) DD 20 S21 0 1.0V -10 0.5V 0.3V -20 0.2V 0.1V -30 -50 2.0V 1.2V S11 -20 = cont 0.0V S22 -40 -30 0.5 -60 1.5 2 Frequency (GHz) 2.5 -50 0.5 3 1 1.5 2 Frequency (GHz) (V =3V, V DD =2V) (V =4.5V, V cont 7 20 DD 20 7 6 10 5 10 5 5 4 5 4 3 0 0.5 Gain (dB) 15 NF (dB) 6 NF 1.5 2 NF 2.5 3 3 1 1.5 Frequency (GHz) 2 3 OUTPUT VSWR vs. FREQUENCY (V =3V) (V =3V) DD 7 2.5 Frequency (GHz) INPUT VSWR vs. FREQUENCY DD 3.5 6 3 V V Output VSWR 5 =2.0V cont 1.0V 4 0.1V 0.1V 1.0V 3 =2.0V cont 2.5 1.0V 0.1V 2 0.1V 1.0V 2.0V 2.0V 1.5 2 1 0.5 =3V) cont Gain 15 Input VSWR Gain (dB) Gain 1 3 GAIN, NF vs. FREQUENCY GAIN, NF vs. FREQUENCY 0 0.5 2.5 NF (dB) 1 1 1.5 2 Freqency (GHz) 2.5 3 1 0.5 1 1.5 2 Freqency (GHz) 2.5 3 -5- NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) I DD vs. V GAIN, I DD (V 12 DD =V -1V) cont vs. Vcont (Variable Gain) (V =3V, P =-25dBm) DD DD 20 in 13 Gain f=1.5GHz 10 12 11 10 11 2.5GHz 2.5GHz -10 10 -20 9 I 9 IDD (mA) Gain (dB) IDD (mA) 0 DD 1.5GHz -30 8 V OUTPUT POWER, I DD DD 5 -40 6 DD -10 -25 -20 -15 -10 -5 cont =2V, f=2.5GHz) 13 13 12 5 12 11 IDD (V) (V =3V, V Output Power P-1dB +1.4dBm cont Output Power P-1dB +1.0dBm 0 10 -5 11 9 -10 I 9 -30 0 10 DD -25 -20 -15 -10 -5 0 Input Power (dBm) Input Power (dBm) GAIN vs. Vcont GAIN vs. Vcont (f=2.5GHz) (f=1.5GHz) 20 20 10 V =4.5V 10 DD 4.5V V =4.5V 0 DD V =3V Gain (dB) Gain (dB) 2 10 Output Power (dBm) 5 1.5 OUTPUT POWER, IDD vs. INPUT POWER IDD (mA) Output Power (dBm) 10 -30 1 V (V DD=3V, Vcont =2V, f=1.5GHz) -5 0.5 (V) vs. INPUT POWER 0 7 0 DD -10 0 4.5V V =3V DD -10 -20 3V -30 -30 0 1 2 3 V cont -6- 3V -20 -40 (V) 4 5 (mA) 4 DD 3 I 2 8 0 1 2 3 V cont (V) 4 5 NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) -7- NJG1101F nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2) GAIN vs. V GAIN vs. FREQUENCY cont (V =3V, f=938MHz) (V =3V) DD 20 V cont DD 20 =2.0V 10 10 1.5V 1.0V -10 Gain (dB) Gain (dB) 0 0.5V 0 -10 -20 -20 0.1V -30 950MHz -40 0.5 1 -30 1.5 2 2.5 0 3 0.5 1 1.5 V Frequency (GHz) cont INPUT VSWR vs. FREQUENCY 2 2.5 OUTPUT VSWR vs. FREQUENCY (V =3V) (V =3V) DD DD 5 5 V 3 cont Output VSWR Input VSWR 4 0.1V 950MHz =2.0V 1.0V 2 950MHz 3 0.1V 1.0V V 2 1 0.6 0.7 0.8 0.9 1 1.1 1 0.6 1.2 0.7 0.8 Frequency (GHz) OUTPUT POWER, I DD vs. INPUT POWER (V =3V, V 5 12 Output Power P-1dB +2.1dBm 0 11 10 Idd 9 -10 -20 -15 -10 Input Power (dBm) -5 0 PDC800MHz Adjacent Channel Leakage Power (dBc) DD 13 -25 1.1 1.2 ACP, RMS VECTOR ERROR vs. OUTPUT POWER IDD (mA) Output Power (dBm) 10 -30 1 =2.0V Frequency (GHz) (V DD=3V, Vcont =2V, f=938MHz) -5 0.9 cont cont =2V, f=938MHz, offset=50kHz) -40 20 -50 15 ACP -60 10 -70 5 RMS Vector Error -80 -10 -5 0 5 Output Power (dBm) 0 10 RMS Vector Error (%) 4 -8- 3 (V) NJG1101F nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2) ACP, RMS VECTOR ERROR vs. Vcont ACP, RMS VECTOR ERROR vs. Vcont (V =3V, Input Power=-25dBm, f=938MHz, offset=50kHz) -50 15 -60 10 -70 5 0 -80 0 0.5 1 1.5 -40 20 -50 15 -60 10 -70 5 0 -80 2 RMS Vector Error (%) 20 PDC800MHz Adjacent Channel Leakage Power (dBc) DD -40 RMS Vector Error (%) PDC800MHz Adjacent Channel Leakage Power (dBc) DD (V =3V, Output Power=-10dBm, f=938MHz, offset=50kHz) 0 0.5 1 Vcont (V) 1.5 2 Vcont (V) nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band : Measured on TEST CIRCUIT 2) GAIN vs. V GAIN vs. FREQUENCY cont (V =3V, f=1441MHz) (V =3V) DD V cont DD 20 20 =2.0V 10 10 1.5V 1.0V Gain (dB) 0.5V -10 -20 0 -10 0.1V -20 -30 1.5GHz -40 0.5 1.9GHz -30 1 GAIN vs. V 1.5 2 2.5 0 3 0.5 1 2 cont DD 20 1.5 2.5 INPUT VSWR vs. V FREQUENCY (V) cont Frequency (GHz) (V =3V, f=1.9GHz) 3 (V DD=3V) 5 10 Input VSWR 4 Gain (dB) Gain (dB) 0 0 -10 1.5GHz 1.9GHz 3 1.0V 2 -20 -30 0 0.5 1 1.5 V cont (V) 2 2.5 3 0.1V 1 0.5 Vcont =2.0V 1 1.5 2 2.5 3 Frequency (GHz) -9- NJG1101F nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2) OUTPUT POWER, IDD vs. INPUT POWER (V =3V, V (V =3V) DD 1.5GHz 1.9GHz 0.1V 1.0V =2.0V 2 1 0.5 1 1.5 2 2.5 12 5 Output Power P-1dB +1.1dBm 0 -5 9 -10 3 -30 -25 -20 DD 12 5 11 DD P-1dB +1.0dBm (mA) Output Power I Output Power (dBm) (V =3V, V 13 10 0 -5 10 Idd 9 -10 -30 -25 -20 -15 -10 -5 15 ACP 10 -60 5 -70 RMS Vector Error -10 -5 ACP, RMS VECTOR ERROR vs. Vcont -60 10 -70 5 RMS Vector Error 0 10 PDC1.5GHz Adjacent Channel Leakage Power (dBc) 15 RMS Vector Error (%) PHS1.9GHz Adjacent Channel Leakage Power (dBc) - 10 - 0 10 5 (VDD=3V, Input Power=-25dBm, f=1441MHz, offset=50kHz) -50 Output Power (dBm) 0 Output Power (dBm) ACP 5 =2V, f=1441MHz, offset=50kHz) -80 20 -80 cont -50 0 (V DD=3V, Vcont =2V, f=1.9GHz, offset=600kHz) -40 0 0 20 ACP, RMS VECTOR ERROR vs. OUTPUT POWER -5 -5 -40 Input Power (dBm) -10 -10 ACP, RMS VECTOR ERROR vs. OUTPUT POWER =2V, f=1.9GHz) PDC1.5GHz Adjacent Channel Leakage Power (dBc) cont -15 Input Power (dBm) OUTPUT POWER, IDD vs. INPUT POWER DD 10 Idd Frequency (GHz) (V =3V, V 11 -40 20 -50 15 -60 10 -70 5 0 -80 0 0.5 1 Vcont (V) 1.5 2 RMS Vector Error (%) cont 13 RMS Vector Error (%) V =2V, f=1441MHz) I Output Power (dBm) Output VSWR 4 3 cont 10 (mA) DD 5 DD OUTPUT VSWR vs. FREQUENCY NJG1101F nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2) ACP, RMS VECTOR ERROR vs. Vcont ACP, RMS VECTOR ERROR vs. Vcont 20 -50 15 -60 10 -70 5 0 0.5 1 V cont 1.5 -40 20 -50 15 -60 10 -70 5 0 -80 0 -80 (VDD=3V, Input Power=-25dBm, f=1.9GHz, offset=600kHz) 0 2 RMS Vector Error (%) -40 RMS Vector Error (%) PDC1.5GHz Adjacent Channel Leakage Power (dBc) DD PHS1.9GHz Adjacent Channel Leakage Power (dBc) (V =3V, Output Power=-10dBm, f=1441MHz, offset=50kHz) 0.5 1 1.5 2 Vcont (V) (V) ACP, RMS VECTOR ERROR vs. Vcont (V =3V, Output Power=-10dBm, f=1.9GHz, offset=600kHz) -40 20 -50 15 -60 10 -70 5 -80 RMS Vector Error (%) PHS1.9GHz Adjacent Channel Leakage Power (dBc) DD 0 0 0.5 1 V cont 1.5 2 (V) - 11 - NJG1101F nAPPLICATION CIRCUIT VDD 6 RF IN 1 AMP ATT AMP 4 RF OUT ZO=50Ω ZO=50Ω ATT 3 ZS=50Ω 2 - 12 - 5 VCONT ZL=50Ω NJG1101F nTEST CIRCUIT1 (WIDE BAND) C3 C4 39pF 1000pF VDD 3V C1 39pF (TOP VIEW) RF IN VCONT 0~2V 1 6 2 5 3 4 L1 15nH C2 39pF C5 39pF RF OUT nTEST CIRCUIT2 (PDC 800MHz, PDC 1.5GHz, PHS 1.9GHz) C3 C4 39pF 1000pF VDD 3V C1R L2R (TOP VIEW) 1 6 2 5 3 4 RF IN VCONT 0~2V R L1 15nH C2R RF OUT C5 39pF NOTE C2 L2 C1 PDC800MHz 100pF 10nH 100pF PDC1.5GHz/PHS1.9GHz 10pF 1.5nH 10pF - 13 - NJG1101F nRECOMMENDED PCB DESIGN (Top View) 20mm VDD GND C4 C3 RF IN C1 L1 C2 C5 VCONT GND RF OUT PCB: FR-4 f=0.2mm MICROSTRIP LINE WIDTH=0.4mm (ZO=50Ω) CHIP SIZE: 1608 22.5mm Notes: [1]Following chip capacitors work as bypass capacitor, and should be connected to corresponding terminals and the ground plane as close as possible. ¬C3 -C4 ®C5 [2]Following chip capacitors are necessary to block DC bias. ¬C1 -C2 [3]Parts list - 14 - Parts ID Comment C1~C5 MURATA GRM36 Series L1~L2 TAIYO-YUDEN HK1608 Series NJG1101F nPACKAGE OUTLINE (MTP6) Lead material Lead surface finish Molding material UNIT Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. : Copper : Solder plating : Epoxy resin : mm : 14mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 15 -